ZnO纳米棒薄膜光学性能的系统研究
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  • 英文篇名:Systematic Study on Optical Properties of ZnO Nanorod Films
  • 作者:郑中华 ; 林建平 ; 宋孝辉 ; 熊建辉
  • 英文作者:ZHENG Zhonghua;LIN Jianping;SONG Xiaohui;XIONG Jianhui;Concord College,Fujian Normal University;Key Lab.of Functional Materials and Applications of Fujian Province,Xiamen University of Technol.;Henan Key Lab.of Photovoltaic Materials,Dept.of Physics and Materials Science,Henan Normal University;
  • 关键词:ZnO纳米棒 ; 吸收光谱 ; 反射光谱 ; 光致发光谱
  • 英文关键词:ZnO nanorods;;absorption spectrum;;reflection spectrum;;photoluminescence spectrum
  • 中文刊名:BDTG
  • 英文刊名:Semiconductor Optoelectronics
  • 机构:福建师范大学协和学院;厦门理工学院福建省功能材料及应用重点实验室;河南师范大学物理与材料科学学院河南省光伏材料重点实验室;
  • 出版日期:2019-06-15
  • 出版单位:半导体光电
  • 年:2019
  • 期:v.40;No.203
  • 基金:福建省中青年教师教育科研项目(JAT170868)
  • 语种:中文;
  • 页:BDTG201903018
  • 页数:5
  • CN:03
  • ISSN:50-1092/TN
  • 分类号:86-90
摘要
采用简化的种子层制备工艺在ITO基底上制备了ZnO种子层,并使用化学溶液沉积法制备了高度取向的ZnO纳米棒阵列。采用XRD和SEM对ZnO纳米棒的结构和形貌进行表征,并对样品的光学性能进行了测试。测试结果表明,所制备的ZnO纳米棒为c轴择优取向的六角纤锌矿结构,直径为66~122nm可控,且排列紧密,形貌规整。光学性能测试结果表明,吸收光谱在375nm附近表现出强烈的紫外吸收边是由于禁带边吸收引起的;反射光谱具有一定的周期振荡性,可用于薄膜厚度的估算;光致发光谱在378nm附近有很强的紫外发射峰;增大生长液浓度和高温退火可降低缺陷发光,改善结晶质量。
        In order to systematically study the optical properties of ZnO nanorod films,a ZnO seed layer was prepared on the ITO substrate by a simplified preparation process,and the highly oriented ZnO nanorod arrays were prepared by chemical bath deposition.Then,the structure and morphology of ZnO nanorods were characterized by XRD and SEM.Finally,the optical properties of the samples were tested.XRD and SEM results show that the prepared ZnO nanorods are c-axis preferred orientation hexagonal wurtzite structure with a diameter of 66~122 nm,tight alignment and regular morphology.Tests were performed on the optical performance and the results show that the absorption spectrum exhibits a strong ultraviolet absorption edge around 375 nm,which is caused by the band gap absorption;and the reflection spectrum has a certain periodic oscillation,which can be used for the estimation of film thickness.The photoluminescence spectrum has a strong ultraviolet emission peak near 378 nm,and increasing the concentration of the growth solution and annealing at high temperature can reduce the defect luminescence and improve the crystal quality.
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