半超结抑制RC-TIGBT Snapback效应机理与仿真
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摘要
首次对半超结RC-TIGBT与传统RC-TIGBT的正向导通机理进行了比较研究。通过Silvaco TCAD软件仿真,模拟研究了Y_(drift)值、P-集电区宽度与N+短路区宽度等关键参数对Snapback效应的影响。结果表明,回退电压点随着Y_(drift)的减小而减小,且与Y_(drift)呈线性关系。对于底部集电极尺寸而言,回退电压点与P-集电区宽度有关,与N+短路区宽度基本无关。基于仿真结果,给出半超结RC-TIGBT的等效电路,并详细分析了半超结技术能抑制Snapback效应的原因。最后,对半超结RC-TIGBT的结构参数进行设计,提出一种能减小Snapback效应的有效方法。
The forward conduction mechanism of semi-super-junction RC-TIGBT(semi-SJ-RC-TIGBT) and traditional RC-TIGBT were compared for the first time. Through the simulation software Silvaco TCAD, the influence of several key parameters such as Y_(drift) value, P-collector width and N+ short area width on the snapback effect were studied. The results showed that the snapback voltage decreased as the Y_(drift) value decreased and was linear with the Y_(drift) value. For the collector size at the bottom, the snapback voltage was related to P-collector width, and was basically independent of the N+ short area width. Based on these simulation results, the equivalent circuit of the semi-SJ-RC-TIGBT device was given, and the reason why the semi-super-junction technology could suppress the snapback effect was analyzed in detail. In addition, for the design of the structural parameters of the semi-SJ-RC-TIGBT device, a reasonable and effective way to reduce the snapback effect was proposed.
The forward conduction mechanism of semi-super-junction RC-TIGBT(semi-SJ-RC-TIGBT) and traditional RC-TIGBT were compared for the first time. Through the simulation software Silvaco TCAD, the influence of several key parameters such as Y_(drift) value, P-collector width and N+ short area width on the snapback effect were studied. The results showed that the snapback voltage decreased as the Y_(drift) value decreased and was linear with the Y_(drift) value. For the collector size at the bottom, the snapback voltage was related to P-collector width, and was basically independent of the N+ short area width. Based on these simulation results, the equivalent circuit of the semi-SJ-RC-TIGBT device was given, and the reason why the semi-super-junction technology could suppress the snapback effect was analyzed in detail. In addition, for the design of the structural parameters of the semi-SJ-RC-TIGBT device, a reasonable and effective way to reduce the snapback effect was proposed.
引文
[1] DENG G Q,LUO X R,ZHOU K,et al.A snapback-free RC-IGBT with alternating N/P buffers [C] // IEEE Int Symp Power Semicond Dev & IC's.Sapporo,Japan.2017:127-130.
[2] ANTONIOU M,UDREA F,BAUER F,et al.A new way to alleviate the RC IGBT snapback phenomenon:the super junction solution [C] // IEEE Int Symp Power Semicond Dev & IC's.Hiroshima,Japan.2010:153-156.
[3] ANTONIOU M,UDREA F,BAUER F.The 3.3 kV semi-superJunction IGBT for increased cosmic ray induced breakdown immunity [C] // IEEE Int Symp Power Semicond Dev & IC's.Barcelona,Spain.2009:168-171.
[4] JIANG H P,ZHANG B,CHEN W J,et al.A snapback suppressed reverse-conducting IGBT with a floating p-region in trench collector [J].IEEE Elec Dev Lett,2012,33(3):417-419.
[5] 王永维,陈星弼.一种具有独特导通机理的新型超结IGBT [J].固体电子学研究与进展,2011,31(6):545-548.
[6] 蒋华平.隔离型和隧道型RC-IGBT新结构与耐压设计 [D].成都:电子科技大学,2013.
[7] 朱利恒.新型RC-IGBT的研究 [D].成都:电子科技大学,2014.
[8] ZHANG W L,ZHU Y J,LU S J,et al.The negative differential resistance characteristics of an RC-IGBT and its equivalent circuit model [J].J Semicond,2014,35(2):62-66.
[9] 李晓平,赵哿,刘江,等.3 300 V逆导型IGBT器件仿真 [J].固体电子学研究与进展,2016(5):406-410.
[2] ANTONIOU M,UDREA F,BAUER F,et al.A new way to alleviate the RC IGBT snapback phenomenon:the super junction solution [C] // IEEE Int Symp Power Semicond Dev & IC's.Hiroshima,Japan.2010:153-156.
[3] ANTONIOU M,UDREA F,BAUER F.The 3.3 kV semi-superJunction IGBT for increased cosmic ray induced breakdown immunity [C] // IEEE Int Symp Power Semicond Dev & IC's.Barcelona,Spain.2009:168-171.
[4] JIANG H P,ZHANG B,CHEN W J,et al.A snapback suppressed reverse-conducting IGBT with a floating p-region in trench collector [J].IEEE Elec Dev Lett,2012,33(3):417-419.
[5] 王永维,陈星弼.一种具有独特导通机理的新型超结IGBT [J].固体电子学研究与进展,2011,31(6):545-548.
[6] 蒋华平.隔离型和隧道型RC-IGBT新结构与耐压设计 [D].成都:电子科技大学,2013.
[7] 朱利恒.新型RC-IGBT的研究 [D].成都:电子科技大学,2014.
[8] ZHANG W L,ZHU Y J,LU S J,et al.The negative differential resistance characteristics of an RC-IGBT and its equivalent circuit model [J].J Semicond,2014,35(2):62-66.
[9] 李晓平,赵哿,刘江,等.3 300 V逆导型IGBT器件仿真 [J].固体电子学研究与进展,2016(5):406-410.