ZnO纳米线的快速生长机理及其场发射性能研究
详细信息    查看全文 | 推荐本文 |
  • 英文篇名:Rapid growth mechanism and field emission properties of ZnO nanowires
  • 作者:郑中华 ; 林建平 ; 杨智
  • 英文作者:ZHENG Zhong-hua;LIN Jian-ping;YANG Zhi;Concord University College Fujian Normal University;Key Laboratory of Functional Materials and Applications of Fujian Province,Xiamen University of Technology;Electronic Materials Research Laboratory,Xi'an Jiaotong University;
  • 关键词:ZnO ; 纳米线 ; 生长机理 ; 场发射
  • 英文关键词:ZnO;;nanowires;;growth mechanism;;field emission
  • 中文刊名:YJYS
  • 英文刊名:Chinese Journal of Liquid Crystals and Displays
  • 机构:福建师范大学协和学院;厦门理工学院福建省功能材料及应用重点实验室;西安交通大学电子陶瓷与器件教育部重点实验室;
  • 出版日期:2018-09-15
  • 出版单位:液晶与显示
  • 年:2018
  • 期:v.33
  • 基金:福建省功能材料及应用重点实验室开放基金(No.fma2017206)~~
  • 语种:中文;
  • 页:YJYS201809006
  • 页数:6
  • CN:09
  • ISSN:22-1259/O4
  • 分类号:46-51
摘要
为了快速制备具有优良场发射性能的ZnO纳米线,对ZnO纳米线的生长机理及场发射性能进行研究。首先采用优化的两步法制备出高长径比的ZnO纳米线,其次采用SEM对ZnO的微观形貌进行表征,然后,在分析形貌特点的基础上,说明了强碱体系下ZnO纳米线薄膜的快速生长机理。最后,对典型样品的场发射性能进行了测试。测试果表明,优化后的两步法,只需3h即可获得直径为40~50nm,长度为2.2~2.7μm,长径比高达54的纳米线。薄膜的开启电场为3.6V/μm,阈值场强为9.1V/um,场增强因子β高达3 391。研究表明,高pH值溶液可以加快ZnO纳米线沿C轴方向的择优生长,获得高长径比的ZnO纳米线,进而获得优良的场发射性能。
        In order to prepare ZnO nanowires with excellent field emission performance,the growth mechanism and field emission performance were studied.Firstly,the high aspect ratio ZnO nanowires were prepared by the optimized two-step method.Secondly,the morphologies of ZnO were characterized by SEM.Then,based on the analysis of the morphological features,the rapid growth mechanism of the ZnO nanowires film under strong alkali conditions were described.Finally,the field emission performance of a typical sample was tested.The test results show that with the optimized two-step method,nanowires with a diameter of 40~50 nm,a length of 2.2~2.7μm,and an aspect ratio of upto 54 can be obtained in only 3 h.The turn-on field of the film is 3.6 V/um,the threshold electric field is 9.1 V/μm,and the field enhancement factorβis as high as 3 391.Studies have shown that high pH solution can accelerate the preferential growth of ZnO nanowire along the C-axis direction,obtain high aspect ratio ZnO nanowires,thereby obtaining excellent field emission performance.
引文
[1]陆慧,张连萍,骆群,等.纳米ZnO墨水的溶剂及浓度优化及其在钙钛矿太阳能电池中的应用[J].发光学报,2016,37(3):265-273.LU H,ZHANG L P,LUO Q,et al.Solvent and concentration optimization of nano-zno inks and their application in perovskite solar cells[J].Chinese Journal of Luminescence,2016,37(3):265-273.(in Chinese)
    [2] KAUR N,ZAPPA D,FERRONI M,et al.Branch-like NiO/ZnO heterostructures for VOC sensing[J].Sensors and Actuators B:Chemical,2018,262:477-485.
    [3]杨志博,曹培江,韩舜,等.Pd颗粒表面修饰ZnO纳米线阵列的制备及其气敏特性[J].发光学报,2017,38(8):1033-1038.YANG Z B,CAO P J,HAN S,et al.Preparation and gas sensing characteristics of ZnO nanowire arrays surfacedecorated by Pd particles[J].Chinese Journal of Luminescence,2017,38(8):1033-1038.(in Chinese)
    [4]孙兴敏,金轶民,矫淑杰,等.电化学沉积法制备ZnO纳米柱及自驱动紫外探测性能研究[J].发光学报,2016,37(5):591-596.SUN X M,JIN Y M,JIAO S J,et al.Fabrication of ZnO nanorods by electrochemical deposition and research on the self-powered ZnO ultraviolet photodetector[J].Chinese Journal of Luminescence,2016,37(5):591-596.(in Chinese)
    [5]孙义,李青.基于化学溶液法制备的氧化锌量子点发光二极管研究[J].液晶与显示,2016,31(7):635-642.SUN Y,LI Q.Research of zinc oxide quantum dot light-emitting diodes based on preparation of chemical solutions[J].Chinese Journal of Liquid Crystals and Displays,2016,31(7):635-642.(in Chinese)
    [6]许坤,王一帆,解意洋,等.基于石墨烯-ZnO纳米线的复合电极在GaN LED中的应用[J].发光学报,2016,37(12):1554-1559.XU K,WANG Y F,XIE Y Y,et al.Graphene-ZnO nanowires based complex electorde used as transparency conductive layer in GaN LED[J].Chinese Journal of Luminescence,2016,37(12):1554-1559.(in Chinese)
    [7] XU J Q,HOU G H,DONG B P,et al.Enhanced electron filed emission from single-crystalline ZnO nanoneedles[J].Nanoscience and Nanotechnology Letters,2013,5(10):1081-1086.
    [8] CUI J B,DAGHLIAN C P,GIBSON U J,et al.Low-temperature growth and field emission of ZnO nanowire arrays[J].Journal of Applied Physics,2005,97(4):044315.
    [9] ZHANG Y A,LIN T,LIN T H,et al.Fabrication and properties of planar gate field emission arrays with patterned ZnO nanowires[J].Materials Technology,2014,29(5):313-318.
    [10]康冬茹,叶芸,汪江胜,等.图形化氧化锌阵列的制备及其场发射性能研究[J].液晶与显示,2017,32(5):367-371.KANG D R,YE Y,WANG J S,et al.Fabrication and field emission properties of patterned ZnO arrays[J].Chinese Journal of Liquid Crystals and Displays,2017,32(5):367-371.(in Chinese)
    [11]梅山孩.锥状ZnO纳米结构薄膜的制备及其场发射特性[J].液晶与显示,2010,25(6):780-783.MEI S H.Preparation and field emission properties of cone-shaped ZnO nanomaterial[J].Chinese Journal of Liquid Crystals and Displays,2010,25(6):780-783.(in Chinese)
    [12] GREENE L E,LAW M,TAN D H,et al.General route to vertical ZnO nanowire arrays using textured ZnO seeds[J].Nano Letters,2005,5(7):1231-1236.
    [13] ZHAO J,JIN Z G,LIU X X,et al.Growth and morphology of ZnO nanorods prepared from Zn(NO3)2/NaOH solutions[J].Journal of the European Ceramic Society,2006,26(16):3745-3752.
    [14] PETERSON R B,FIELDS C L,GREGG B A.Epitaxial chemical deposition of ZnO nanocolumns from NaOH solutions[J].Langmuir,2004,20(12):5114-5118.
    [15] LEE Y J,SOUNART T L,LIU J,et al.Tunable arrays of ZnO nanorods and nanoneedles via seed layer and solution chemistry[J].Crystal Growth&Design,2008,8(6):2036-2040.
    [16] YANG Y H,WANG C X,WANG B,et al.ZnO nanowire and amorphous diamond nanocomposites and field emission enhancement[J].Chemical Physics Letters,2005,403(4/6):248-251.

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700