对胶体球光刻中单层胶体晶体曝光特性的研究
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摘要
对胶体球光刻中单层胶体晶体(MCC)的曝光特性进行了研究。利用磁控溅射的方法在蓝宝石衬底上生长SiO_2薄膜并旋涂光刻胶,通过固液界面自组装的方法在光刻胶上制备了单层胶体晶体。胶体球光刻利用单层胶体晶体作为微透镜阵列,通过紫外曝光的方法在光刻胶上制备微孔阵列。光刻胶上图形的周期性与胶体球的直径有关,并且大直径的胶体球的聚光性能要强于小直径胶体球,在曝光过程中随着曝光时间的增加,由于曝光量的增加以及光刻胶的漂白现象,光刻胶上微孔的尺寸也在增加。最后以曝光后的光刻胶为掩膜,将感应耦合等离子体刻蚀技术(ICP)以及湿法腐蚀相结合,制备出了图形化蓝宝石(PSS)衬底。
The exposure characteristics of monolayer colloidal crystals(MCCs) in colloidal sphere photolithography were studied.SiO_2 thin films were grown on sapphire substrates by magnetron sputtering and spin-coating with the photoresist.Monolayer colloidal crystals were fabricated on the photoresist by solid-liquid interface self-assembly.Colloidal sphere lithography used monolayer colloidal crystals as micro lens arrays to fabricate micropore arrays on the photoresist by UV exposure.The periodicity of the pattern on the photoresist was related to the diameter of the colloidal sphere,and the focusing property of the large-diameter colloidal sphere was stronger than that of the small-diameter colloidal sphere.In the process of exposure,the size of the micropore on the photoresist was increased with the increase of the exposure time due to the increase of the exposure and bleaching of the photoresist.Finally,the patterned sapphire substrate(PSS) was prepared by using the exposed photoresist as a mask,coupled with inductively coupled plasma etching(ICP) and wet etching.
The exposure characteristics of monolayer colloidal crystals(MCCs) in colloidal sphere photolithography were studied.SiO_2 thin films were grown on sapphire substrates by magnetron sputtering and spin-coating with the photoresist.Monolayer colloidal crystals were fabricated on the photoresist by solid-liquid interface self-assembly.Colloidal sphere lithography used monolayer colloidal crystals as micro lens arrays to fabricate micropore arrays on the photoresist by UV exposure.The periodicity of the pattern on the photoresist was related to the diameter of the colloidal sphere,and the focusing property of the large-diameter colloidal sphere was stronger than that of the small-diameter colloidal sphere.In the process of exposure,the size of the micropore on the photoresist was increased with the increase of the exposure time due to the increase of the exposure and bleaching of the photoresist.Finally,the patterned sapphire substrate(PSS) was prepared by using the exposed photoresist as a mask,coupled with inductively coupled plasma etching(ICP) and wet etching.
引文
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[3]LIU X H,LU W S,JI Z Y,et al.Fabrication of a 256-bits organic memory by soft X-ray lithography[J].Chinese Physics:B,2010,19(5):499-504.
[4]VILACOMAMALA J,GORELICK S,GUZENKO V A,et al.Dense high aspect ratio hydrogen silsesquioxane nanostructures by 100 ke V electron beam lithography[J].Journal of Vacuum Science&Technology B Microelectronics&Nanometer Structures,2010,21(28):285305-285310.
[5]邓常猛,耿永友,吴谊群.激光光刻技术的研究与发展[J].红外与激光工程,2012,41(5):1223-1231.DENG C M,GENG Y Y,WU Y Q.Research development of laser lithography technology[J].Infrared&Laser Engineering,2012,41(5):1223-1231(in Chinese).
[6]LI S,YANG Z,ZHANG Z,et al.Study of nanospheres lithography technology with super-lens for fabricating nano holes[J].Journal of Applied Physics,2013,113(18):184-188.
[7]DONG P,YAN J,WANG J,et al.282-nm Al Ga N-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates[J].Applied Physics Letters,2013,102(24):241113-1-241113-4.
[8]ZHANG Z,GENG C,HAO Z,et al.Recent advancement on micro-/nano-spherical lens photolithography based on monolayer colloidal crystals[J].Advances in Colloid&Interface Science,2015,228:105-122.
[9]SZABO Z,VOLK J,FULOP E,et al.Regular Zn O nanopillar arrays by nanosphere photolithography[J].Photonics and Nanostructures-Fundamentals and Applications,2013,11(1):1-7.
[10]LUO C L,YANG R X,YAN W G,et al.Rapid fabrication of large area binary polystyrene colloidal crystals[J].Superlattices&Microstructures,2016,95:33-37.
[11]ZHANG J,LI Y,ZHANG X,et al.Colloidal selfassembly meets nanofabrication:from two-dimensional colloidal crystals to nanostructure arrays[J].Advanced Materials,2010,22(38):4249-4269.
[12]WU W,KATSNELSO A,MEMIS O G,et al.A deep sub-wavelength process for the formation of highly uniform arrays of nanoholes and nanopillars[J].Nanotechnology,2007,18(48):485302-1-485302-4.
[13]GENG C,YAN Q,DU C,et al.Large-area and ordered sexfoil pore arrays by spherical-lens photolithography[J].ACS Photonics,2014,1(8):754-760.
[14]CHEN C,SUN X,ZHANG D,et al.Dye-doped polymeric planar waveguide devices based on a thermal UV-bleaching technique[J].Optics&Laser Technology,2009,41(4):495-498.
[15]WANG X B,SUN J,CHEN C M,et al.Thermal UVtreatment on SU-8 polymer for integrated optics[J].Optical Materials Express,2014,4(3):509-517.
[16]HUNG S K,LIN K H,CHEN C L,et al.Total-internalreflection-based photomask for large-area photolithography[J].Optics&Laser Technology,2016,79:39-44.
[17]CHEN Y C,LIN B W,HSU W C,et al.Morphologies and plane indices of pyramid patterns on wet-etched patterned sapphire substrate[J].Materials Letters,2014,118(3):72-75.