Strain Induced Nanopillars and Variation of Magnetic Properties in La_(0.825)Sr_(0.175)MnO_3/LaAlO_3 Films
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摘要
To investigate the process of strain relaxation and resultant variation of microstructure and magnetic properties,low-doped La_(0.825)Sr_(0.175)MnO_3 epitaxial films with different thicknesses are deposited on LaAlO_3 substrates and strain induced nanopillars are discovered inside the La_(0.825) Sr_(0.175)MnO_3 film. Perpendicular oriented nanopillars mainly exist below 30 nm and tend to disappear above 30 nm. The distribution of nanopillars not only induce the variation of lattice parameters and local structural distortion but also lead to the deviation of easy magnetization axis from the perpendicular direction. Specifically, the out-of-plane lattice parameters of the film decrease quickly with the increase of the thickness but tend to be constant when the thickness is above 30 nm. Meanwhile, the variations of magnetic properties along in-plane and out-of-plane directions would also decline at first and they then remain nearly unchanged. Our work constructs the relationship between nanopillars and magnetic properties inside films. We are able to clearly reveal the effects of inhomogeneous strain relaxation.
To investigate the process of strain relaxation and resultant variation of microstructure and magnetic properties,low-doped La_(0.825)Sr_(0.175)MnO_3 epitaxial films with different thicknesses are deposited on LaAlO_3 substrates and strain induced nanopillars are discovered inside the La_(0.825) Sr_(0.175)MnO_3 film. Perpendicular oriented nanopillars mainly exist below 30 nm and tend to disappear above 30 nm. The distribution of nanopillars not only induce the variation of lattice parameters and local structural distortion but also lead to the deviation of easy magnetization axis from the perpendicular direction. Specifically, the out-of-plane lattice parameters of the film decrease quickly with the increase of the thickness but tend to be constant when the thickness is above 30 nm. Meanwhile, the variations of magnetic properties along in-plane and out-of-plane directions would also decline at first and they then remain nearly unchanged. Our work constructs the relationship between nanopillars and magnetic properties inside films. We are able to clearly reveal the effects of inhomogeneous strain relaxation.
To investigate the process of strain relaxation and resultant variation of microstructure and magnetic properties,low-doped La_(0.825)Sr_(0.175)MnO_3 epitaxial films with different thicknesses are deposited on LaAlO_3 substrates and strain induced nanopillars are discovered inside the La_(0.825) Sr_(0.175)MnO_3 film. Perpendicular oriented nanopillars mainly exist below 30 nm and tend to disappear above 30 nm. The distribution of nanopillars not only induce the variation of lattice parameters and local structural distortion but also lead to the deviation of easy magnetization axis from the perpendicular direction. Specifically, the out-of-plane lattice parameters of the film decrease quickly with the increase of the thickness but tend to be constant when the thickness is above 30 nm. Meanwhile, the variations of magnetic properties along in-plane and out-of-plane directions would also decline at first and they then remain nearly unchanged. Our work constructs the relationship between nanopillars and magnetic properties inside films. We are able to clearly reveal the effects of inhomogeneous strain relaxation.
引文
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[3]Wu Y Y,Zhang D M,Yu J,Zheng C D and Wang Y B2008 Chin.Phys.Lett.25 4131
[4]Luo B C,Chen C L,Fan F and Jin K X 2012 Chin.Phys.Lett.29 018104
[5]Steenbeck K and Hiergeist R 1999 Appl.Phys.Lett.75 1778
[6]Haeni J H,Irvin P,Chang W,Uecker R,Reiche P,Li Y L,Choudhury S,Tian W,Hawley M E,Craigo B,Tagantsev A K,Pan X Q,Streiffer S K,Chen L Q,Kirchoefer S W,Levy J and Schlom D G 2004 Nature 430 758
[7]Tranquada J M,Sternlieb B J,Axe J D,Nakamura Y and Uchida S 1995 Nature 375 561
[8]Tebano A,Aruta C,Sanna S,Medaglia P G,Balestrino G,Sidorenko A A,De Renzi R,Ghiringhelli G,Braicovich L,Bisogni V and Brookes N B 2008 Phys.Rev.Lett.100137401
[9]Giesen F,Damaschke B,Moshnyaga V,Samwer K and Müller G A 2004 Phys.Rev.B 69 014421
[10]Tsui F,Smoak M C,Nath T K and Eom C B 2000 Appl.Phys.Lett.76 2421
[11]Wu Y,Suzuki Y,Rüdiger U,Yu J,Kent A D,Nath T Kand Eom C B 1999 Appl.Phys.Lett.75 2295
[12]Yang S Y,Kuang W L,Liou Y,Tse W S,Lee S F and Yao Y D 2004 J.Magn.Magn.Mater.268 326
[13]Garcia V,Bibes M,Barthélémy A,Bowen M,Jacquet E,Contour J P and Fert A 2004 Phys.Rev.B 69 052403
[14]De Jong M P,Dediu V A,Taliani C and Salaneck W R 2003J.Appl.Phys.94 7292
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[17]Kotani A,Nakajima H,Harada K,Ishii Y and Mori S 2016Phys.Rev.B 94 024407
[18]Yu X,Tokunaga Y,Taguchi Y and Tokura Y 2017 Adv.Mater.29 1603958
[19]Sampaio J,Cros V,Rohart S,Thiaville A and Fert A 2013Nat.Nanotechnol.8 839
[20]Nagaosa N and Tokura Y 2013 Nat.Nanotechnol.8 899
[21]Tomasello R,Martinez E,Zivieri R,Torres L,Carpentieri M and Finocchio G 2015 Sci.Rep.4 6784
[22]Seki S,Yu X Z,Ishiwata S and Tokura Y 2012 Science 336198
[23]Jiang J C,Meletis E I and Gnanasekar K I 2002 Appl.Phys.Lett.80 4831
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[25]Tokura Y and Nagaosa N 2000 Science 288 462
[26]Vailionis A,Boschker H,Siemons W,Houwman E P,Blank D H A,Rijnders G and Koster G 2011 Phys.Rev.B 83064101
[27]Haghiri-Gosnet A M,Wolfman J,Mercey B,Simon C,Lecoeur P,Korzenski M,Hervieu M,Desfeux R and Baldinozzi G 2000 J.Appl.Phys.88 4257