基于MOS技术的神经元电路研究进展
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  • 英文篇名:Research Status of Neuron Circuit Based on MOS Technology
  • 作者:程泽军 ; 李彬鸿 ; 李博 ; 罗家俊 ; 韩郑生
  • 英文作者:CHENG Zejun;LI Binhong;LI Bo;LUO Jiajun;HAN Zhengsheng;Institute of Microelectronics, Chinese Academy of Sciences;University of Chinese Academy of Sciences;Key Laboratory of Silicon Device Technology, Chinese Academy of Sciences;
  • 关键词:神经元电路 ; LIF ; Izhikevich ; 神经元模型
  • 英文关键词:neuron circuit;;LIF;;Izhikevich;;neuron model
  • 中文刊名:MINI
  • 英文刊名:Microelectronics
  • 机构:中国科学院微电子研究所;中国科学院大学;中国科学院硅器件技术重点实验室;
  • 出版日期:2019-04-20
  • 出版单位:微电子学
  • 年:2019
  • 期:v.49;No.280
  • 基金:国家自然科学基金资助项目(61404169)
  • 语种:中文;
  • 页:MINI201902028
  • 页数:7
  • CN:02
  • ISSN:50-1090/TN
  • 分类号:143-149
摘要
设计一种具有多种神经元响应模式、结构紧凑、低功耗的神经元电路,对大规模神经形态硬件的构建具有重要意义。分析了LIF、Izhikevich两种神经元模型的基本原理,重点介绍了数字和模拟两类神经元电路的设计方法、工作原理和优缺点。最后,讨论了神经元电路的设计趋势以及挑战。
        It was important to construct a large scale neuromorphic hardware which was composed of neuron circuits that were designed with compact structure, low power consumption and behaviors of biological neuron. The basic principles of LIF and Izhikevich neuron models were first analyzed. Then, the design methods, mechanisms and characteristics of digital and analog neuron circuits were introduced. Finally, the design tendency and challenges of neuron circuits were discussed.
引文
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