电弧法合成室温铁磁性AlN稀磁半导体粉体
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摘要
以高纯Al粉和N2为原料,采用电弧法在原位成功合成微米球状室温铁磁性Al N稀磁半导体粉体。X-射线衍射仪(XRD)测试表明,Al N粉体为六方纤锌矿结构;扫描电子显微镜(SEM)显示Al N粉体微米片平均尺寸在2~40μm,微米球平均尺寸在3~30μm;电子能量散射谱(EDS)表明,Al N粉体由Al和N元素组成,且N不足;光致发光谱(PL)测试表明,Al N粉体发光主要由N空位和本征缺陷等引起的发光峰;振动样品磁强计(VSM)测试表明Al N粉体具有室温铁磁性,饱和磁化强度和矫顽力分别为130.0 A/m和13.68 k A/m。在950°C氨气气氛下退火8 h后,饱和磁化强度和矫顽力分别为48.6 A/m和8.536 k A/m。缺陷在引起Al N稀磁半导体粉体的铁磁性上扮演着重要的角色。
Al N diluted magnetic semiconductor powders( DMSs) with microspheres room temperature( RT)ferromagnetism were successfully synthesized in situ by arc method with high purity Al powder and N2 as reaction materials. X-ray diffraction( XRD) test showed that Al N powder was hexagonal wurtzite structure. Scanning electron microscopy( SEM) showed that the average particle size of Al N powders microsheets was in the range of 2-40 and the average particle size of Al N powders microspheres was in the range of 3-30. Al N powders composition of Al and N was observed by an energy dispersive spectrometer( EDS) and N was insufficient. The Photoluminescence( PL) spectra of Al N powder showed that the luminescence of Al N powder was mainly caused by defects such as N vacancy and intrinsic defects. The vibrating sample magnetometer( VSM) showed that Al N powder exhibited increased ferromagnetism at room temperature,the saturation magnetization and coercivity were 130. 0 A/m and 13. 68 k A/m,respectively. After annealing at 950 °C ammonia atmosphere for 8 h,the saturation magnetization and coercivity were 48. 6 A/m and 8. 536 k A/m,respectively. We considered that the related defects play an important role to contribute for ferromagnetic order in Al N DMSs powders.
Al N diluted magnetic semiconductor powders( DMSs) with microspheres room temperature( RT)ferromagnetism were successfully synthesized in situ by arc method with high purity Al powder and N2 as reaction materials. X-ray diffraction( XRD) test showed that Al N powder was hexagonal wurtzite structure. Scanning electron microscopy( SEM) showed that the average particle size of Al N powders microsheets was in the range of 2-40 and the average particle size of Al N powders microspheres was in the range of 3-30. Al N powders composition of Al and N was observed by an energy dispersive spectrometer( EDS) and N was insufficient. The Photoluminescence( PL) spectra of Al N powder showed that the luminescence of Al N powder was mainly caused by defects such as N vacancy and intrinsic defects. The vibrating sample magnetometer( VSM) showed that Al N powder exhibited increased ferromagnetism at room temperature,the saturation magnetization and coercivity were 130. 0 A/m and 13. 68 k A/m,respectively. After annealing at 950 °C ammonia atmosphere for 8 h,the saturation magnetization and coercivity were 48. 6 A/m and 8. 536 k A/m,respectively. We considered that the related defects play an important role to contribute for ferromagnetic order in Al N DMSs powders.
引文
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[4]Pan D,Jian J K,Sun Y F,et al.Structure and magnetic characteristics of Si-doped Al N films[J].Journal of Alloys and Compounds,2012,519(10):41-46.
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[8]Ren Y S,Pan D,Jian J k,et al.Room-temperature ferromagnetism in Ti-doped Al N film I[J].Integrated Ferroelectrics,2013,146:154-160.
[9]Ren Y S,Wu R,Jian J k,et al.Ferromagnetism in Al N nanorod arrays induced by doping of a nonmagnetic element:Sn[J].Integrated Ferroelectrics,2015,163:1-7.
[10]Zhang Z f,Ren Y S,Han L,et al.Mixed-solvothermal synthesis of Cd S micro/nanostructures with optical and ferromagnetic properties[J].Physica E:Low-dimensional Systems and Nanostructures,2017,92:30-35.
[11]Jenkins D W,Dow J D.Electronic structures and doping of In N,InxGa1-xN,and InxAl1-xN[J].Physical Review B,1989,39:3317-3329.
[12]Wu Q,Zhang F,Wang X Z,et al.Preparation and characterization of Al N-based hierarchical nanostructures with improved chemical stability[J].The Journal of Physical Chemistry C,2007,111:12639-12642.
[13]Jadwisienczak W M,Lozykowski H J,Berishev I,et al.Visible Emission from Al N Doped with Eu and Tb Ions[J].Journal of Applied Physics,2001,89(8):4384-90.
[14]Mason P M,Przybylinska H,Watkins G D,et al.Optically detected electron paramagnetic resonance of Al N single crystals[J].Physical Review B,1999,59(3):1937-47.
[15]Li J J,Song B,Wu R.Preparation and optical properties of freestanding transparent aluminum nitride film assembled by aligned nanorods[J].Journal of the American Ceramic Society,2012,95(3):870-873.