辉光放电质谱法在高纯材料分析中的应用
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摘要
高纯材料是现代高新技术发展的基础,在电子、光学和光电子等尖端科学领域发挥着重要作用。采用固体样品直接分析的辉光放电质谱法(GDMS),在高纯金属、高纯半导体材料的痕量和超痕量杂质分析中有着非常广泛的应用。综述了GDMS法对高纯金属、高纯半导体材料进行的元素分析,并对分析过程中工作参数、溅射时间、干扰峰等因素的影响进行了阐述。同时,也详述了应用GDMS法对高纯金属钛、镉,高纯半导体硅,分别进行的痕量杂质元素分析,结果显示放电稳定性良好,典型元素含量的相对标准偏差均在较为理想范围内。GDMS应用前景广泛,未来,GDMS将在除固体样品之外的其他样品类型的分析领域中发挥重要作用。
High purity material is the basis of modern high technology development,and plays an important role in the fields of electronics,optics and optoelectronics.Glow discharge mass spectrometry(GDMS),as a solid sample direct analysis technique,has been widely used intrace and ultra-trace analysis impurities in high purity metal and high purity semiconductor materials.This paper reviewed the element analysis of high purity metal and high purity semiconductor material by GDMS,and explained the influences of working parameters,sputtering time and interference peak.It summarized that the trace impurity elements analysis of high purity titanium,cadmium,highpurity silicon by GDMS.The results shows that good discharge stability and typical elements relative standard deviation are in the ideal range.GDMS has a broad application prospect,in the future,GDMS will play an important role in the analysis of other sample types than solid samples.
High purity material is the basis of modern high technology development,and plays an important role in the fields of electronics,optics and optoelectronics.Glow discharge mass spectrometry(GDMS),as a solid sample direct analysis technique,has been widely used intrace and ultra-trace analysis impurities in high purity metal and high purity semiconductor materials.This paper reviewed the element analysis of high purity metal and high purity semiconductor material by GDMS,and explained the influences of working parameters,sputtering time and interference peak.It summarized that the trace impurity elements analysis of high purity titanium,cadmium,highpurity silicon by GDMS.The results shows that good discharge stability and typical elements relative standard deviation are in the ideal range.GDMS has a broad application prospect,in the future,GDMS will play an important role in the analysis of other sample types than solid samples.
引文
[1]MACUS R K.Glow Discharge Spectroscopies[M].New York:Springer US,1993.
[2]KING F L,TENG J,STEINER R E.Special feature:Tutorial.Glow discharge mass spectrometry:Trace element determinations in solid samples[J].Journal of Mass Spectrometry,1995,30(8):1061-1075.
[3]BOGAERTS A,GIJBELS R.Fundamental aspects and applications of glow discharge spectrometric techniques[J].Spectrochimica Acta Part B:Atomic Spectroscopy,1998,53(1):1-42.
[4]KRISHNA M V B,SHEKHAR R,KARUNASAGARD,et al.Multi-element characterization of high purity cadmium using inductively coupled plasma quadrupole mass spectrometry and glow-discharge quadrupole mass apectrometry[J].Analytica ChimicaActa,2000,408(1-2):199-207.
[5]ADAMS F,VERTES A.Inorganic mass spectrometry of solid samples[J].Fresenius Journal of Analytical Chemistry,1990,337(6):638-647.
[6]HUTTON R C,RAITH A.Analysis of pure metals using a quadrupole-based glow discharge mass spectrometry[J].Journal of Analytical Atomic Spectrometry,1992,7(4):623-627.
[7]LIM J W,MIMURA K,ISSHIKI M.Application of glow discharge mass spectrometry for direct trace impurity analysis in Cu films[J].Applied Surface Science,2004,227(1):300-305.
[8]RAPARTH S,ARUNACHALAM J,DAS N,et al.Multielemental characterisation of cobalt by glow discharge qusdrupole mass spectrometry[J].Talanta,2005,65(5):1270-1278.
[9]JAGER R,SAPRYKIN A I,BECKER J S,et al.Analysis of semiconducting materials by high-resolution radiofrequency glow discharge mass spectrometry[J].Microchimica Acta,1997,125(1-4)::41-44.
[10]MILTON D M P,HUTTON R C,RONAN G A.Optimisation of discharge parameters for the analysis of high purity silicon wafers magnetic sector glow discharge mass spectrometry[J].Fresenius Journal of Analytical Chemistry,1992,343(9-10):773-777.
[11]VENZAGO C,WEIGERT M.Application of the glow discharge mass spectrometry(GDMS)for the multielements trace and ultra-trace analysis of sputtering targets[J].Fresenius Journal of Analytical chemistry,1994,350(4-5):303-309.
[12]邓军华,曹新全,李化.辉光放电发射光谱法测定硅钢薄板中微量硼元素[J].中国无机分析化学(Chinese Journal of Inorganic Analytical Chemistry),2011,1(3):39-42.
[13]余兴.辉光放电光谱法在深度分析上的应用现状[J].中国无机分析化学(Chinese Journal of Inorganic Analytical Chemistry),2011,1(1):53-60.
[14]杭纬.瞬短脉冲辉光放电飞行时间质谱仪的研制[D].厦门:厦门大学,1994.
[15]陈刚,葛爱景,卓尚军,等.辉光放电质谱法在无机非金属材料分析中的应用[J].分析化学(Chinese Journal of Analytical Chemistry),2004,32(1):107-112.
[16]余兴,李小佳,王海舟.辉光放电质谱的应用及展望[C]//2008年国际冶金及材料分析测试学术报告会论文集.北京,2008:1164.
[17]MACUS R K.Radiofrequency powered glow discharges:opportunities and challenges.Plenary lecture[J].Journal of analytical atomic spectrometry,1996(11):821-828.
[18]HANG W,WALDEN W O,HARRISON W W.Microsecond pulsed glow discharge as an analytical spectroscopicsource[J].Analytical Chemistry,1996,68(7):1148-1152.
[19]VASSAMILLET L F.Use of glow discharge mass spectrometry for quality control of high-purity aluminum[J].Journal of Analytical Atomic Spectrometry,1989(4)451-455.
[20]MYKYTIUK A P,SCMENIUK P,BERMAN S.Analysis of high purity metals and semiconductor materials by glow discharge mass spectrometry[J].Progress in Analytical Spectroscopy,1990,13(1):1-10.
[21]李爱嫦,刘红,李继东,等.辉光放电质谱法测定高纯铝中杂质元素[J].分析试验室(Chinese Journal of Analysis Laboratory),2015,34(4):480-483.
[22]钱荣,斯琴毕力格,卓尚军,等.辉光放电质谱新方法分析颗粒状金属铪[J].分析化学(Chinese Journal of Analytical Chemistry),2011,39(5):700-704.
[23]何季麟,王向东,刘卫国.钽铌资源及中国钽铌工业的发展[J].中国材料进展(Materials China),2005,24(6):1-5.
[24]陈刚,葛爱景,卓尚军,等.高纯钽的辉光放电质谱多元素分析[J].质谱学报(Journal of Chinese Mass Spectrometry Society),2007,28(1):36-39.
[25]杨海岸,罗舜,闫豫昕,等.辉光放电质谱法测定高纯镍中16中痕量杂质元素[J].冶金分析(Metallurgical Analysis),2015,35(5):1-6.
[26]DONOHUE D L,PETEK M.Isotopic measurements of palladium metal containing protium and deuterium by GDMS[J].Analytical Chemistry,1991,63(7):1911-1919.
[27]HELD A,TAYLOR P,INGELBRECHT C,et a1.Determination of scandium in high-purity titanium using inductively coupled plasma mass spectrometry and glow discharge mass spectrometry as part of its certification as a reference material[J].Journal of Analytical Atomic Spectrometry,1995,10(10):849-852.
[28]唐利斌,荣百炼,姬荣斌.高纯碲中杂质的辉光放电质谱分析[J].质谱学报(Journal of Chinese Mass Spectrometry Society),2004,25(10):17-18.
[29]KRISHNA M V B,SHEKHAR R,KARUNASAGARD,et a1.Multi-element characterization of high purity cadmium using inductively coupled plasma quadrupole mass spectrometry and glow-discharge quadrupole mass spectrometry[J].Analytica Chimica Acta,2000,408(1-2):199-207.
[30]普朝光,张震,肖绍泽.辉光放电质谱仪直接测定超高纯镉中的痕量杂质元素[J].红外与激光工程(Infrared and Laser Engineering),1997,26(3):40-43.
[31]普朝光,肖绍泽,张震.辉光放电质谱仪测定超纯锗中23种痕量杂质元素[J].质谱学报(Journal of Chinese Mass Spectrometry Society),1997,18(4):67-67.
[32]荣百炼,普朝光,姬荣斌,等.辉光放电质谱法测定高纯锑中的痕量杂质元素[J].质谱学报(Journal of Chinese Mass Spectrometry Society),2004,25(2):96-99.
[33]BECKER J S,SOMAN R S,BECKER T,et al.Trace and ultratrace analysis of gallium arsenide by different mass spectrometric techniques[J].Journal of Analytical Atomic Spectrometry,1998,13(9):983-987.
[34]SANDERSON N E,HALL E,CLARK F,CHARALAMBOUS P,et a1.Glow discharge mass spectrometry-a powerful technique for the elemental analysis of solids[J].Mikrochim Acta,1987,91(1-6):275-290..
[35]SABATINOA M D,DONS A L,HINRICHS J,et a1.Determination of relative sensitivity factors for trace element analysis of solar cell silicon by fast-flow glow discharge mass spectrometry[J].Spectrochimica Acta Part B:Atomic Spectroscopy,2011,66(2):144-148.
[36]VIETH W,HUNEKEJ C.Relative sensitivity factors in glow discharge mass spectrometry[J].Spectrochimica Acta Part B:Atomic Spectroscopy,1991,46(2):137-153.
[37]刘洁,钱荣,卓尚军,等.高纯硅中痕量元素分析方法研究进展[J].理化检验-化学分册(Physical Testing and Chemical Analysis Part B:Chemical Analysis),2013,49(1):121-127.
[38]张金娥,刘英,臧慕文,等.GDMS法和ICP-MS法测定太阳能级多晶硅中杂质元素含量[J].分析试验室(Chinese Journal of Analysis Laboratory),2013,32(9):59-62.
[39]杨赟金,杨海岸.GD-MS法测定太阳能级多晶硅中痕量杂质元素含量[J].云南冶金(Yunnan Metallurgy),2015,44(4):69-72.
[2]KING F L,TENG J,STEINER R E.Special feature:Tutorial.Glow discharge mass spectrometry:Trace element determinations in solid samples[J].Journal of Mass Spectrometry,1995,30(8):1061-1075.
[3]BOGAERTS A,GIJBELS R.Fundamental aspects and applications of glow discharge spectrometric techniques[J].Spectrochimica Acta Part B:Atomic Spectroscopy,1998,53(1):1-42.
[4]KRISHNA M V B,SHEKHAR R,KARUNASAGARD,et al.Multi-element characterization of high purity cadmium using inductively coupled plasma quadrupole mass spectrometry and glow-discharge quadrupole mass apectrometry[J].Analytica ChimicaActa,2000,408(1-2):199-207.
[5]ADAMS F,VERTES A.Inorganic mass spectrometry of solid samples[J].Fresenius Journal of Analytical Chemistry,1990,337(6):638-647.
[6]HUTTON R C,RAITH A.Analysis of pure metals using a quadrupole-based glow discharge mass spectrometry[J].Journal of Analytical Atomic Spectrometry,1992,7(4):623-627.
[7]LIM J W,MIMURA K,ISSHIKI M.Application of glow discharge mass spectrometry for direct trace impurity analysis in Cu films[J].Applied Surface Science,2004,227(1):300-305.
[8]RAPARTH S,ARUNACHALAM J,DAS N,et al.Multielemental characterisation of cobalt by glow discharge qusdrupole mass spectrometry[J].Talanta,2005,65(5):1270-1278.
[9]JAGER R,SAPRYKIN A I,BECKER J S,et al.Analysis of semiconducting materials by high-resolution radiofrequency glow discharge mass spectrometry[J].Microchimica Acta,1997,125(1-4)::41-44.
[10]MILTON D M P,HUTTON R C,RONAN G A.Optimisation of discharge parameters for the analysis of high purity silicon wafers magnetic sector glow discharge mass spectrometry[J].Fresenius Journal of Analytical Chemistry,1992,343(9-10):773-777.
[11]VENZAGO C,WEIGERT M.Application of the glow discharge mass spectrometry(GDMS)for the multielements trace and ultra-trace analysis of sputtering targets[J].Fresenius Journal of Analytical chemistry,1994,350(4-5):303-309.
[12]邓军华,曹新全,李化.辉光放电发射光谱法测定硅钢薄板中微量硼元素[J].中国无机分析化学(Chinese Journal of Inorganic Analytical Chemistry),2011,1(3):39-42.
[13]余兴.辉光放电光谱法在深度分析上的应用现状[J].中国无机分析化学(Chinese Journal of Inorganic Analytical Chemistry),2011,1(1):53-60.
[14]杭纬.瞬短脉冲辉光放电飞行时间质谱仪的研制[D].厦门:厦门大学,1994.
[15]陈刚,葛爱景,卓尚军,等.辉光放电质谱法在无机非金属材料分析中的应用[J].分析化学(Chinese Journal of Analytical Chemistry),2004,32(1):107-112.
[16]余兴,李小佳,王海舟.辉光放电质谱的应用及展望[C]//2008年国际冶金及材料分析测试学术报告会论文集.北京,2008:1164.
[17]MACUS R K.Radiofrequency powered glow discharges:opportunities and challenges.Plenary lecture[J].Journal of analytical atomic spectrometry,1996(11):821-828.
[18]HANG W,WALDEN W O,HARRISON W W.Microsecond pulsed glow discharge as an analytical spectroscopicsource[J].Analytical Chemistry,1996,68(7):1148-1152.
[19]VASSAMILLET L F.Use of glow discharge mass spectrometry for quality control of high-purity aluminum[J].Journal of Analytical Atomic Spectrometry,1989(4)451-455.
[20]MYKYTIUK A P,SCMENIUK P,BERMAN S.Analysis of high purity metals and semiconductor materials by glow discharge mass spectrometry[J].Progress in Analytical Spectroscopy,1990,13(1):1-10.
[21]李爱嫦,刘红,李继东,等.辉光放电质谱法测定高纯铝中杂质元素[J].分析试验室(Chinese Journal of Analysis Laboratory),2015,34(4):480-483.
[22]钱荣,斯琴毕力格,卓尚军,等.辉光放电质谱新方法分析颗粒状金属铪[J].分析化学(Chinese Journal of Analytical Chemistry),2011,39(5):700-704.
[23]何季麟,王向东,刘卫国.钽铌资源及中国钽铌工业的发展[J].中国材料进展(Materials China),2005,24(6):1-5.
[24]陈刚,葛爱景,卓尚军,等.高纯钽的辉光放电质谱多元素分析[J].质谱学报(Journal of Chinese Mass Spectrometry Society),2007,28(1):36-39.
[25]杨海岸,罗舜,闫豫昕,等.辉光放电质谱法测定高纯镍中16中痕量杂质元素[J].冶金分析(Metallurgical Analysis),2015,35(5):1-6.
[26]DONOHUE D L,PETEK M.Isotopic measurements of palladium metal containing protium and deuterium by GDMS[J].Analytical Chemistry,1991,63(7):1911-1919.
[27]HELD A,TAYLOR P,INGELBRECHT C,et a1.Determination of scandium in high-purity titanium using inductively coupled plasma mass spectrometry and glow discharge mass spectrometry as part of its certification as a reference material[J].Journal of Analytical Atomic Spectrometry,1995,10(10):849-852.
[28]唐利斌,荣百炼,姬荣斌.高纯碲中杂质的辉光放电质谱分析[J].质谱学报(Journal of Chinese Mass Spectrometry Society),2004,25(10):17-18.
[29]KRISHNA M V B,SHEKHAR R,KARUNASAGARD,et a1.Multi-element characterization of high purity cadmium using inductively coupled plasma quadrupole mass spectrometry and glow-discharge quadrupole mass spectrometry[J].Analytica Chimica Acta,2000,408(1-2):199-207.
[30]普朝光,张震,肖绍泽.辉光放电质谱仪直接测定超高纯镉中的痕量杂质元素[J].红外与激光工程(Infrared and Laser Engineering),1997,26(3):40-43.
[31]普朝光,肖绍泽,张震.辉光放电质谱仪测定超纯锗中23种痕量杂质元素[J].质谱学报(Journal of Chinese Mass Spectrometry Society),1997,18(4):67-67.
[32]荣百炼,普朝光,姬荣斌,等.辉光放电质谱法测定高纯锑中的痕量杂质元素[J].质谱学报(Journal of Chinese Mass Spectrometry Society),2004,25(2):96-99.
[33]BECKER J S,SOMAN R S,BECKER T,et al.Trace and ultratrace analysis of gallium arsenide by different mass spectrometric techniques[J].Journal of Analytical Atomic Spectrometry,1998,13(9):983-987.
[34]SANDERSON N E,HALL E,CLARK F,CHARALAMBOUS P,et a1.Glow discharge mass spectrometry-a powerful technique for the elemental analysis of solids[J].Mikrochim Acta,1987,91(1-6):275-290..
[35]SABATINOA M D,DONS A L,HINRICHS J,et a1.Determination of relative sensitivity factors for trace element analysis of solar cell silicon by fast-flow glow discharge mass spectrometry[J].Spectrochimica Acta Part B:Atomic Spectroscopy,2011,66(2):144-148.
[36]VIETH W,HUNEKEJ C.Relative sensitivity factors in glow discharge mass spectrometry[J].Spectrochimica Acta Part B:Atomic Spectroscopy,1991,46(2):137-153.
[37]刘洁,钱荣,卓尚军,等.高纯硅中痕量元素分析方法研究进展[J].理化检验-化学分册(Physical Testing and Chemical Analysis Part B:Chemical Analysis),2013,49(1):121-127.
[38]张金娥,刘英,臧慕文,等.GDMS法和ICP-MS法测定太阳能级多晶硅中杂质元素含量[J].分析试验室(Chinese Journal of Analysis Laboratory),2013,32(9):59-62.
[39]杨赟金,杨海岸.GD-MS法测定太阳能级多晶硅中痕量杂质元素含量[J].云南冶金(Yunnan Metallurgy),2015,44(4):69-72.