基于双层界面修饰的高性能底栅底接触有机薄膜晶体管研究
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  • 英文篇名:High Performance Bottom-contact Organic Thin Film Transistors Using Chemically Modified Silver Contacts and Dielectric Surfaces
  • 作者:谢应涛 ; 欧阳世宏 ; 王东平 ; 朱大龙 ; 许鑫 ; 方汉铿
  • 英文作者:XIE Yingtao;OUYANG Shihong;WANG Dongping;ZHU Dalong;XU Xin;FANG Hankeng;Department of Electronic Engineering,Shanghai Jiao Tong University;National Engineering Lab for TFT-LCD Key Materials and Technologies;
  • 关键词:有机薄膜晶体管 ; 绝缘层界面修饰 ; 电极界面修饰
  • 英文关键词:organic thin film transistors;;chemically modified gate dielectric;;chemically modified bottom contacts
  • 中文刊名:GDJS
  • 英文刊名:Optoelectronic Technology
  • 机构:上海交通大学电子工程系;TFT-LCD关键材料及技术国家工程实验室;
  • 出版日期:2014-12-28
  • 出版单位:光电子技术
  • 年:2014
  • 期:v.34
  • 基金:教育部新教师基金(20110073120018)
  • 语种:中文;
  • 页:GDJS201404004
  • 页数:4
  • CN:04
  • ISSN:32-1347/TN
  • 分类号:16-19
摘要
一种兼容的双界面修饰被成功应用于修饰有机薄膜晶体管的底接触电极和绝缘层界面。这种兼容的双界面修饰为首先采用4-FTP修饰银源漏电极进而提高其功函数,然后采用HMDS或者OTS进一步修饰二氧化硅绝缘层界面。结果显示场迁移率得到极大提高,其最优特性高达0.91 cm2V-1s-1。
        A compatible process of orthogonal self-assembled monolayers( SAMs) is applied to intentionally modify the bottom contacts and gate dielectric surfaces of organic thin film transistors( OTFTs). This efficient interface modification is firstly achieved by 4-fluorothiophenol( 4-FTP) SAM to chemically treat the silver source-drain( S / D) contacts while the silicon oxide( Si O2) dielectric interface is further primed by either hexamethyldisilazane( HMDS) or octyltrichlorosilane( OTS-C8). Results show that the field effect mobilities of the bottom-gate bottom-contact PTDPPTFT4 transistors are significantly improved to 0. 91 cm2V- 1s- 1.
引文
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