摘要
一种兼容的双界面修饰被成功应用于修饰有机薄膜晶体管的底接触电极和绝缘层界面。这种兼容的双界面修饰为首先采用4-FTP修饰银源漏电极进而提高其功函数,然后采用HMDS或者OTS进一步修饰二氧化硅绝缘层界面。结果显示场迁移率得到极大提高,其最优特性高达0.91 cm2V-1s-1。
A compatible process of orthogonal self-assembled monolayers( SAMs) is applied to intentionally modify the bottom contacts and gate dielectric surfaces of organic thin film transistors( OTFTs). This efficient interface modification is firstly achieved by 4-fluorothiophenol( 4-FTP) SAM to chemically treat the silver source-drain( S / D) contacts while the silicon oxide( Si O2) dielectric interface is further primed by either hexamethyldisilazane( HMDS) or octyltrichlorosilane( OTS-C8). Results show that the field effect mobilities of the bottom-gate bottom-contact PTDPPTFT4 transistors are significantly improved to 0. 91 cm2V- 1s- 1.
引文
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