金属氧化物薄膜晶体管电特性参数的提取
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摘要
采用磁控溅射法制备了底栅反交叠刻蚀阻挡型(ES)金属氧化物薄膜晶体管(α-IGZO TFT),测试了TFT电流-电压特性曲线。根据TFT的一级近似模型,结合实验数据提出了TFT电特性参数提取方法。在TFT的线性区和饱和区采用线性拟合提取了TFT的场效应迁移率和阈值电压,定义了TFT的开态电流和关态电流,在TFT的亚阈值区分别采用线性拟合和一阶导数的方法提取了TFT的亚阈值摆幅。通过筛选测试条件和数据拟合范围,得到α-IGZO TFT线性区和饱和区场效应迁移率和阈值电压分别为6. 27 cm~2/V·s和7. 7 V;7. 24 cm~2/V·s和4. 3 V,α-IGZO TFT的开关比和亚阈值摆幅分别为109和272 m V/dec。
The bottom gate staggered etch stop( ES) α-IGZO TFT is manufactured using magnetron sputtering,and current-voltage curves are measured. An extraction method of TFT electrical parameters is proposed by combining the experimental data and Level 1 model of TFT. The values of field effect mobility and threshold voltage are extracted,respectively, in the linear and saturation region by linear fitting. On state and off state currents are defined.Subthreshold swing is extracted in the threshold region by the method of linear fitting and the first derivative,respectively. All results are obtained through carefully screening test conditions and data points. The values of fieldeffect mobility and threshold voltage in the two region are: 6. 27 cm~2/V·s and 7. 7 V,7. 24 cm~2/V·s and 4. 3 V,respectively. The switch ratio is 109. The subthreshold swing is 272 m V/dec. These results show that this extraction method can be used in area of experiment teaching and scientific research.
The bottom gate staggered etch stop( ES) α-IGZO TFT is manufactured using magnetron sputtering,and current-voltage curves are measured. An extraction method of TFT electrical parameters is proposed by combining the experimental data and Level 1 model of TFT. The values of field effect mobility and threshold voltage are extracted,respectively, in the linear and saturation region by linear fitting. On state and off state currents are defined.Subthreshold swing is extracted in the threshold region by the method of linear fitting and the first derivative,respectively. All results are obtained through carefully screening test conditions and data points. The values of fieldeffect mobility and threshold voltage in the two region are: 6. 27 cm~2/V·s and 7. 7 V,7. 24 cm~2/V·s and 4. 3 V,respectively. The switch ratio is 109. The subthreshold swing is 272 m V/dec. These results show that this extraction method can be used in area of experiment teaching and scientific research.
引文
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[4] Kamiyal T,Hosono H. Material characteristics and applications of transparent amorphous oxide semiconductors[J]. NPG Asia Mater,2010,2(1):15-22.
[5] Park J S,Kim H,Ki I D. Overview of electroceramic materials for oxide semiconductor thin film transistors[J]. J Electroceram,2014,32:117-140.
[6]王丽,陈江博,苏雪琼,等.科研融入实践教学与大学生创新能力培养[J].实验室研究与探索,2011,30(8):112-114.
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[9] Cherie R K,Paul A.薄膜晶体管(TFT)及其在平板显示中的应用[M].北京:电子工业出版社,2008:74-77.
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[11]戴亚翔. TFT LCD面板的驱动与设计[M].北京:清华大学出版社,2008:21-22.
[12]陈志强.低温多晶硅(LTPS)显示技术[M].北京:科学出版社,2006:21-22.
[13] Nomura K,Ohta H,Takagi A,et al. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors[J]. Nature,2004,432:488-492.
[14] Nomura K, Takagi A, Kamiya T,et al. Amorphous oxide semiconductors for high-performance flexible thin-film transistors[J]. Jpn J Appl Phys,2006,45(5B):4303-4308.
[15]李帅帅,梁朝旭,王雪霞,等.高迁移率非晶铟镓锌氧化物薄膜晶体管的制备与特性研究[J].物理学报,2013,62(7):077302.