氧化镁层对石墨烯/硅太阳能电池的界面优化
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摘要
为了探究石墨烯/硅太阳能电池的铝/硅背接触特性,采用连续蒸镀的方法在铝/硅背接触间插入一层氧化镁介质层,对比测试具有不同厚度氧化镁层的电池的电流-电压特性、外量子效应、电池的串联电阻以及背接触电阻。研究表明:随着氧化镁厚度的增加,电池的光电转换效率、串联电阻以及背接触电阻存在先增大后降低的趋势,当氧化镁的厚度为1nm时的光电转化效率最优,达到5.53%,厚度为0nm时,光电转换效率为2.90%;当氧化镁的厚度为0nm和1nm时,相应的串联电阻(背接触电阻)分别为4.1Ω(9.6Ω)和1.8Ω(3.2Ω).
In order to investigate the characteristics of the back-side surface,i.e.,Al/Si,of graphene/Si solar cells,a ultra-thin magnesium oxide interlayer with various thickness between the Al electrode and the silicon substrate was prepared by using a successive thermal evaporation deposition technology.The current-voltage curves,external quantum efficiency,series resistance,and back contact resistance of the graphene/Si solar cells with different thickness of the magnesium oxide interlayer were measured.The results show that the photoelectric conversion efficiency,series resistance and back contact resistance increased first and then decreased with the increase in the magnesium oxide thickness,and the device performance is best when the thickness of magnesium oxide layer is 1 nm.The photoelectric conversion efficiency,series resistance and back contact resistance of the solar cells with 0 nm and 1 nm MgO are2.90%,4.2Ω,9.6Ω,and 5.53%,1.8Ω,3.2Ω.
In order to investigate the characteristics of the back-side surface,i.e.,Al/Si,of graphene/Si solar cells,a ultra-thin magnesium oxide interlayer with various thickness between the Al electrode and the silicon substrate was prepared by using a successive thermal evaporation deposition technology.The current-voltage curves,external quantum efficiency,series resistance,and back contact resistance of the graphene/Si solar cells with different thickness of the magnesium oxide interlayer were measured.The results show that the photoelectric conversion efficiency,series resistance and back contact resistance increased first and then decreased with the increase in the magnesium oxide thickness,and the device performance is best when the thickness of magnesium oxide layer is 1 nm.The photoelectric conversion efficiency,series resistance and back contact resistance of the solar cells with 0 nm and 1 nm MgO are2.90%,4.2Ω,9.6Ω,and 5.53%,1.8Ω,3.2Ω.
引文
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[3]LI Xin-ming,ZHU Hong-wei,WANG Kun-lin,et al.Graphene-on-silicon schottky junction solar Cells[J].Advanced Materials,2010,22(25):2743-2750.
[4]SONG Yi,LI Xin-ming,Mackin C,et al.Role of interfacial oxide in high-efficiency graphene-silicon Schottky barrier solar cells[J].Nano Letters,2015,15(3):2104-2110.
[5]MIAO Xiao-chang,TONGAY S,PETTERSON M K,et al.High efficiency graphene solar cells by chemical doping[J].Nano Letters,2012,12(6):2745-2750.
[6]ZHANG Xiao-zhen,XIE Chao,JIE Jian-sheng,et al.High-efficiency graphene/Si nanoarray Schottky junction solar cells via surface modification andgraphene doping[J].Journal of Materials Chemistry A,2013,1(22):6593-6601.
[7]XIE Chao,ZHANG Xiao-zhen,WU Yi-ming,et al.Surface passivation and band engineering:a way toward high efficiency graphene-planar Si solar cells[J].Journal of Materials Chemistry A,2013,1(30):8567-8574.
[8]XU Di-kai,YU Xue-gong,GAO Da-ce,et al.Room-temperature processed,air-stable and highly efficient graphene/silicon solar cells with an organic interlayer[J].Journal of Materials Chemistry A,2016,4(29):11284-11291.
[9]XIE Chao,ZHANG Xiu-juan,RUAN Kai-qun,et al.High-efficiency,air stable graphene/Si micro-hole array Schottky junction solar cells[J].Journal of Materials Chemistry A,2013,1(48):15348-15354.
[10]LIAO Tong-qing,WEI Xiao-long,WU Sheng,et al.Reduction of reflected light from silicon solar cells through spherical optical micro/nano-structure[J].Infrared and Laser Engineering,2016,45(1):0116001.廖同庆,魏小龙,吴昇,等.利用球型微纳米颗粒结构表面减小硅基太阳能电池的光反射[J].红外与激光工程,2016,45(1):0116001.
[11]MU Xin-hui,YU Xue-gong,XU Di-kai,et al.High efficiency organic/silicon hybrid solar cells with doping-free selective emitter structure induced by a WO3thin interlayer[J].Nano Energy,2015,16:54-61.
[12]CARR B A,FRIEDLAND E,MALHERBE J B.Effect of annealing on the Schottky barrier height of Al/n-Si Schottky diodes after Ar+ion bombardment[J].Journal of Applied Physics,1988,64(9):4775-4777.
[13]ZHANG Yun-fang,CUI Wei,ZHU Ya-wen,et al.High efficiency hybrid PEDOT:PSS/nanostructured silicon Schottky junction solar cells by doping-free rear contact[J].Energy&Environmental Science,2015,8(1):297-302.
[14]ZHANG Yun-fang,LIU Rui-yuan,LEE Shuit-tong,et al.The role of a LiF layer on the performance of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/Si organic-inorganic hybrid solar cells[J].Applied Physics Letters,2014,104(8):083514.
[15]XU Di-kai,YU Xue-gong,ZUO Li-jian,et al.Interface engineering and efficiency improvement of monolayer graphenesilicon solar cells by inserting an ultra-thin LiF interlayer[J].RSC Advances,2015,5(58):46480-46484.
[16]CHOI H W,KIM S Y,KIM W K,et al.Enhancement of electron injection in inverted top-emitting organic lightemitting diodes using an insulating magnesium oxide buffer layer[J].Applied Physics Letters,2005,87(8):082102.
[17]KIM Y E,PARK H,KIM J J.Enhanced quantum efficiency in polymer electroluminescence devices by inserting a tunneling barrier formed by Langmuir-Blodgett films[J].Applied Physics Letters,1996,69(5):599.
[18]BRUNA M,OTT A K,IJAS M,et al.Doping dependence of the Raman spectrum of defected graphene[J].ACSNano,2014,8(7):7432-41.
[19]YANG Li-fei,YU Xue-gong,XU Ming-sheng,et al.Interface engineering for efficient and stable chemical-doping-free graphene-on-silicon solar cells by introducing agraphene oxide interlayer[J].Journal of Materials Chemistry A,2014,2(40):16877-16883.
[20]REEVES G K,HARRISON H B.Obtaining the specific contact resistance from transmission line model measurements[J].IEEE Electron Device Letters,1982,3(5):111-113.
[21]CUI Tong-xiang,LV Rui-tao,HUANG Zheng-hong,et al.Enhanced efficiency of graphene/Si heterojunction solar cells by molecular doping[J].Journal of Materials Chemistry A,2013,1(18):5736-5740.