铜互连微结构中无籽晶RuMoC扩散阻挡层的稳定性（英文）
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摘要
采用磁控共溅射Ru和MoC靶,通过调节掺入MoC的含量获得非晶态RuM oC薄膜,研究了非晶RuM oC薄膜的热稳定性。HRTEM和XRD结果表明,在500℃下RuM oC薄膜依旧保持非晶结构;XPS分析结果表明,在该温度下,Ru-C键依旧保持完好,是RuM oC薄膜良好热稳定的关键。此外,研究了非晶RuM oC薄膜在大马士革铜互连线微结构中的热稳定性。HRTEM结果表明,RuM oC薄膜表面可直接电镀铜,TEM原位EDS结果表明,非晶RuM oC薄膜在500℃下依旧成功阻挡了Cu原子扩散。
The objective of this study is to test the feasibility of RuMoC films for its application in seedless Cu diffusion barriers of damascene structure. The compatibility with integral circuit(IC) fabrication and thermal stability of RuMoC barriers were investigated. The RuMoC barriers are amorphous at temperatures up to 500 °C, showing great thermal stability. This is because the Ru-C bonds are well preserved at those temperatures, as revealed by XPS results, which hinder the Ru from crystallizing. A Cu plug of good quality was successfully electroplated on RuMoC barriers and filled the trench without seed layer, and the barrier effectively block the diffusion of Cu atom at temperatures up to 500 °C.
The objective of this study is to test the feasibility of RuMoC films for its application in seedless Cu diffusion barriers of damascene structure. The compatibility with integral circuit(IC) fabrication and thermal stability of RuMoC barriers were investigated. The RuMoC barriers are amorphous at temperatures up to 500 °C, showing great thermal stability. This is because the Ru-C bonds are well preserved at those temperatures, as revealed by XPS results, which hinder the Ru from crystallizing. A Cu plug of good quality was successfully electroplated on RuMoC barriers and filled the trench without seed layer, and the barrier effectively block the diffusion of Cu atom at temperatures up to 500 °C.
引文
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3 Holloway K,Fryer P M,Cabral C et al.Journal of Applied Physics[J],1992,71(11):5433
4 Traving M,Zienert I,Zschech E et al.Applied Surface Science[J],2005,252(1):11
5 Wojcik H,Krien C,Merkel U et al.Microelectronic Engineering[J],2013,112(12):103
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9 Hsu K C,Perng D C,Yeh J B et al.Applied Surface Science[J],2012,258(18):7225
10 Wojcik H,Kaltofen R,Merkel U et al.Microelectronic Engineering[J],2012,92(2):71
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12 Jansson U,Lewin E.Thin Solid Films[J],2013,536(6):1
13 Hsu K C,Perng D C,Wang Y C.Journal of Alloys&Compounds[J],2012,516(5):102
14 Zou J,Liu B,Jiao G et al.Journal of Applied Physics[J],2016,120(9):229
15 Steinlesberger G,Engelhardt M,Schindler G et al.Solid-State Electronics[J],2003,47(7):1237
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17 Lee J S,Yie J E.Korean Journal of Chemical Engineering[J],1991,8(3):164
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21 Hammond J S,Gaarenstroom S W,Winograd N.Analytical Chemistry[J],2002,47(13):2193
22 Mc Evoy A J,Gissler W.Physica Status Solidi[J],1982,69(1):91
23 Liu C M,Liu W L,Chen W J et al.Journal of the Electrochemical Society[J],2005,152(3):234