垂直型MoS_2/C_(60)范德华异质结的研究
|
摘要
研究了采用垂直堆垛方式构筑的MoS_2/C_(60)范德华异质结的特性。利用直流磁控溅射法制备Mo薄膜,对Mo薄膜进行硫化退火处理得到MoS_2薄膜,采用真空蒸镀法在MoS_2薄膜上沉积C_(60)进而形成MoS_2/C_(60)范德华异质结,并制备了Au/MoS_2/C_(60)/Al结构的器件。对MoS_2薄膜的晶体结构进行了分析,对MoS_2,C_(60)及MoS_2/C_(60)薄膜的喇曼光谱及光吸收特性进行了测试和表征。结果表明:经过750℃退火后的MoS_2晶型为2H型;由于在MoS_2和C_(60)薄膜之间范德华力的存在,相对于生长在Si/SiO_2衬底上,沉积在MoS_2上的C_(60)薄膜喇曼特征峰发生红移; MoS_2/C_(60)薄膜在可见光范围内具有明显的光吸收特性;异质结表现出良好的整流特性,通过电子导电模型分析得出电子的传输机制包含热电子发射,空间电荷限制电流传导(SCLC)和隧穿现象。
Characteristics of van der Waals heterojunction of MoS_2/C_(60) fabricated by vertical stacking were investigated.Mo films were prepared by DC magnetron sputtering method,and MoS_2 films were formed by sulfurized and annealed in S(g) atmosphere.The C_(60) films were deposited on MoS_2 films by vacuum evaporation,thus MoS_2/C_(60) van der Waals heterojunction was formed.A device with Au/MoS_2/C_(60)/Al structure was prepared.The crystal structure of MoS_2 film was analyzed.The Raman spectra and absorption properties of MoS_2,C_(60) and MoS_2/C_(60) films were tested and characterized.The results show that the crystal structure of MoS_2 after annealing at 750℃ is trigonal prismatic(2H).When C_(60) is deposited on the MoS_2 film,the Raman peak of C_(60) is slightly red-shifted in comparison with that deposited on Si/SiO_2 substrate,due to van der Waals forces between MoS_2 and C_(60).The MoS_2/C_(60) film has good absorption properties in visible light range.The heterojunction shows good rectification characteristics.Through electron conduction model analysis,the transport mechanisms of the electronics include thermionic emission,space charge limited conduction(SCLC),and tunneling phenomenon.
Characteristics of van der Waals heterojunction of MoS_2/C_(60) fabricated by vertical stacking were investigated.Mo films were prepared by DC magnetron sputtering method,and MoS_2 films were formed by sulfurized and annealed in S(g) atmosphere.The C_(60) films were deposited on MoS_2 films by vacuum evaporation,thus MoS_2/C_(60) van der Waals heterojunction was formed.A device with Au/MoS_2/C_(60)/Al structure was prepared.The crystal structure of MoS_2 film was analyzed.The Raman spectra and absorption properties of MoS_2,C_(60) and MoS_2/C_(60) films were tested and characterized.The results show that the crystal structure of MoS_2 after annealing at 750℃ is trigonal prismatic(2H).When C_(60) is deposited on the MoS_2 film,the Raman peak of C_(60) is slightly red-shifted in comparison with that deposited on Si/SiO_2 substrate,due to van der Waals forces between MoS_2 and C_(60).The MoS_2/C_(60) film has good absorption properties in visible light range.The heterojunction shows good rectification characteristics.Through electron conduction model analysis,the transport mechanisms of the electronics include thermionic emission,space charge limited conduction(SCLC),and tunneling phenomenon.
引文
[1]NOVOSELOV K S,GEIM A K,MOROZOV S V,et al.Electric field effect in atomically thin carbon films[J].Science,2004,306(5696):666-669.
[2]MAK K F,LEE C,HONE J,et al.Atomically thin MoS2:a new direct-gap semiconductor[J].Physical Review Letters,2010,105(13):136805-1-136805-4.
[3]YOON Y,GANAPATHI K,SALAHUDDIN S.How good can monolayer MoS2transistors be?[J].Nano Letters,2011,11(9):3768-3773.
[4]LI Y G,LI Y L,ARAUJO C M,et al.Single-layer MoS2as an efficient photocatalyst[J].Catalysis Science&Technology,2013,3(9):2214-2220.
[5]VEERAMALAI C P,LI F S,XU H Y,et al.One pot hydrothermal synthesis of graphene like MoS2nanosheets for application in high performance lithium ion batteries[J].RSC Advances,2015,5(71):57666-57670.
[6]LOPEZ-SANCHEZ O,LEMBKE D,KAYCI M,et al.Ultrasensitive photodetectors based on monolayer MoS2[J].Nature Nanotechnology,2013,8(7):497-501.
[7]TSAI M L,SU S H,CHANG J K,et al.Monolayer MoS2heterojunction solar cells[J].ACS Nano,2014,8(8):8317-8322.
[8]WANG X T,HUANG L,PENG Y T,et al.Enhanced rectification,transport property and photocurrent generation of multilayer Re Se2/MoS2p-n heterojunctions[J].Nano Research,2016,9(2):507-516.
[9]CHENG R,LI D H,ZHOU H L,et al.Electroluminescence and photocurrent generation from atomically sharp WSe2/MoS2heterojunction p-n diodes[J].Nano Letters,2014,14(10):5590-5597.
[10]JARIWALA D,HOWELL S L,CHEN K S,et al.Hybrid,gate-tunable,van der Waals p-n heterojunctions from pentacene and MoS2[J].Nano Letters,2016,16(1):497-503.
[11]HE X X,CHOW W L,LIU F C,et al.MoS2/Rubrene van der Waals heterostructure:toward ambipolar fieldeffect transistors and inverter circuits[J].Small,2017,13:1602558-1-1602558-6.
[12]CHEN R F,LIN C,YU H,et al.Templating C60on MoS2nanosheets for 2D hybrid van der Waals p-n nanoheterojunctions[J].Chemistry of Materials,2016,28(12):4300-4306.
[13]SAKURAI M,TADA H,SAIKI K,et al.Van der Waals epitaxial growth of C60film on a cleaved face of MoS2[J].Japanese Journal of Applied Physics,1991,30(11A):L1892.
[14]陈荣新,乌明奇,顾昌鑫.MoS2基板上外延生长C60薄膜的分子动力学模拟[J].真空科学与技术,2002,22(5):360-365.CHEN R X,WU M Q,GU C X.Molecular dynamics simulation of C60thin films epitaxial growing on MoS2[J].Vacuum Science and Technology,2002,22(5):360-365(in Chinese).
[15]REMKAR M,MRZEL A,JESIH A,et al.New composite MoS2-C60crystals[J].Advanced Materials,2005,17(7):911-914.
[16]BLINC R,CEVC P,MRZEL A,et al.EPR spectra of MoS2/C60[J].Physica Status Solidi(B),2010,247(11/12):3033-3034.
[17]LIN J D,ZHONG J Q,ZHONG S,et al.Modulating electronic transport properties of MoS2field effect transistor by surface overlayers[J].Applied Physics Letters,2013,103(6):063109-1-063109-4.
[18]GAN L Y,ZHANG Q Y,CHENG Y C,et al.Photovoltaic heterojunctions of fullerenes with MoS2and WS2monolayers[J].The Journal of Physical Chemistry Letters,2014,5(8):1445-1449.
[19]CHOUDHARY N,PARK J,HWANG J Y,et al.Growth of large-scale and thickness-modulated MoS2nanosheets[J].ACS Applied Materials&Interfaces,2014,6(23):21215-21222.
[20]WANG Q H,KALANTAR-ZADEH K,KIS A,et al.Electronics and optoelectronics of two-dimensional transition metal dichalcogenides[J].Nature Nanotechnology,2012,7(11):699-712.
[21]LI H,ZHANG Q,YAP C C R,et al.From bulk to monolayer MoS2:evolution of Raman scattering[J].Advanced Functional Materials,2012,22(7):1385-1390.
[22]WILCOXON J P,NEWCOMER P P,SAMARA G A.Synthesis and optical properties of MoS2and isomorphousnanoclusters in the quantum confinement regime[J].Journal Of Applied Physics,1997,81(12):7934-7944.
[23]KIM J K,CHO K,KIM T Y,et al.Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2pnheterojunctiondiodes[J].Scientific Reports,2016,6:36775-1-36775-8.
[24]MIR F A,REHMAN S U,MIR T A,et al.Structural,optical and transport properties of 4-hydroxy coumarin:an organic Schottky diode[J].Applied Physics:A,2014,116(3):1017-1023.
[25]CALDIRAN Z,DENIZ A R,AYDOGAN,et al.The barrier height enhancement of the Au/n-Si/Al Schottky barrier diode by electrochemically formed an organic anthracene layer on n-Si[J].Superlattices and Microstructures,2013,56:45-54.
[2]MAK K F,LEE C,HONE J,et al.Atomically thin MoS2:a new direct-gap semiconductor[J].Physical Review Letters,2010,105(13):136805-1-136805-4.
[3]YOON Y,GANAPATHI K,SALAHUDDIN S.How good can monolayer MoS2transistors be?[J].Nano Letters,2011,11(9):3768-3773.
[4]LI Y G,LI Y L,ARAUJO C M,et al.Single-layer MoS2as an efficient photocatalyst[J].Catalysis Science&Technology,2013,3(9):2214-2220.
[5]VEERAMALAI C P,LI F S,XU H Y,et al.One pot hydrothermal synthesis of graphene like MoS2nanosheets for application in high performance lithium ion batteries[J].RSC Advances,2015,5(71):57666-57670.
[6]LOPEZ-SANCHEZ O,LEMBKE D,KAYCI M,et al.Ultrasensitive photodetectors based on monolayer MoS2[J].Nature Nanotechnology,2013,8(7):497-501.
[7]TSAI M L,SU S H,CHANG J K,et al.Monolayer MoS2heterojunction solar cells[J].ACS Nano,2014,8(8):8317-8322.
[8]WANG X T,HUANG L,PENG Y T,et al.Enhanced rectification,transport property and photocurrent generation of multilayer Re Se2/MoS2p-n heterojunctions[J].Nano Research,2016,9(2):507-516.
[9]CHENG R,LI D H,ZHOU H L,et al.Electroluminescence and photocurrent generation from atomically sharp WSe2/MoS2heterojunction p-n diodes[J].Nano Letters,2014,14(10):5590-5597.
[10]JARIWALA D,HOWELL S L,CHEN K S,et al.Hybrid,gate-tunable,van der Waals p-n heterojunctions from pentacene and MoS2[J].Nano Letters,2016,16(1):497-503.
[11]HE X X,CHOW W L,LIU F C,et al.MoS2/Rubrene van der Waals heterostructure:toward ambipolar fieldeffect transistors and inverter circuits[J].Small,2017,13:1602558-1-1602558-6.
[12]CHEN R F,LIN C,YU H,et al.Templating C60on MoS2nanosheets for 2D hybrid van der Waals p-n nanoheterojunctions[J].Chemistry of Materials,2016,28(12):4300-4306.
[13]SAKURAI M,TADA H,SAIKI K,et al.Van der Waals epitaxial growth of C60film on a cleaved face of MoS2[J].Japanese Journal of Applied Physics,1991,30(11A):L1892.
[14]陈荣新,乌明奇,顾昌鑫.MoS2基板上外延生长C60薄膜的分子动力学模拟[J].真空科学与技术,2002,22(5):360-365.CHEN R X,WU M Q,GU C X.Molecular dynamics simulation of C60thin films epitaxial growing on MoS2[J].Vacuum Science and Technology,2002,22(5):360-365(in Chinese).
[15]REMKAR M,MRZEL A,JESIH A,et al.New composite MoS2-C60crystals[J].Advanced Materials,2005,17(7):911-914.
[16]BLINC R,CEVC P,MRZEL A,et al.EPR spectra of MoS2/C60[J].Physica Status Solidi(B),2010,247(11/12):3033-3034.
[17]LIN J D,ZHONG J Q,ZHONG S,et al.Modulating electronic transport properties of MoS2field effect transistor by surface overlayers[J].Applied Physics Letters,2013,103(6):063109-1-063109-4.
[18]GAN L Y,ZHANG Q Y,CHENG Y C,et al.Photovoltaic heterojunctions of fullerenes with MoS2and WS2monolayers[J].The Journal of Physical Chemistry Letters,2014,5(8):1445-1449.
[19]CHOUDHARY N,PARK J,HWANG J Y,et al.Growth of large-scale and thickness-modulated MoS2nanosheets[J].ACS Applied Materials&Interfaces,2014,6(23):21215-21222.
[20]WANG Q H,KALANTAR-ZADEH K,KIS A,et al.Electronics and optoelectronics of two-dimensional transition metal dichalcogenides[J].Nature Nanotechnology,2012,7(11):699-712.
[21]LI H,ZHANG Q,YAP C C R,et al.From bulk to monolayer MoS2:evolution of Raman scattering[J].Advanced Functional Materials,2012,22(7):1385-1390.
[22]WILCOXON J P,NEWCOMER P P,SAMARA G A.Synthesis and optical properties of MoS2and isomorphousnanoclusters in the quantum confinement regime[J].Journal Of Applied Physics,1997,81(12):7934-7944.
[23]KIM J K,CHO K,KIM T Y,et al.Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2pnheterojunctiondiodes[J].Scientific Reports,2016,6:36775-1-36775-8.
[24]MIR F A,REHMAN S U,MIR T A,et al.Structural,optical and transport properties of 4-hydroxy coumarin:an organic Schottky diode[J].Applied Physics:A,2014,116(3):1017-1023.
[25]CALDIRAN Z,DENIZ A R,AYDOGAN,et al.The barrier height enhancement of the Au/n-Si/Al Schottky barrier diode by electrochemically formed an organic anthracene layer on n-Si[J].Superlattices and Microstructures,2013,56:45-54.