相变存储器失效机理的研究进展
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摘要
相变存储器由于具有非易失性、高速度、低功耗等优点被认为是最有可能成为下一代存储器的主流产品之一。然而存储器芯片的良率、密度和操作速度受制于性能最差的单元,因此研究相变存储器的失效机理对于存储器芯片成本的降低以及性能的提升至关重要。文章综述了相变存储器失效机理的研究进展,主要讨论和归纳了电性操作和工艺制程所导致的相变存储器失效模型和失效机理,包括电迁移、热动力学效应、相变应力和热应力、电压极性、结晶引发的偏析、浓度梯度、电极材料以及制造工艺引起的失效。
The phase change memory(PCM) is considered a major candidate for next generation memories due to its nonvolatility, fast program access, and low consumption power.However, the yield, density and operation speed of PCM chips are limited by the cell that has the worst performance. To improve the performance and reduce their cost, it is essential to investigate their failure mechanism. This paper presents an overview of the failure mode and failure mechanism of PCMs induced by electrical operation and manufacture processes, focusing on the issues of electro-migration, thermodynamic effects, phase change stress and thermal stress, voltage polarity, crystallization induced segregation, concentration distribution, heater materials, and the manufacture process.
The phase change memory(PCM) is considered a major candidate for next generation memories due to its nonvolatility, fast program access, and low consumption power.However, the yield, density and operation speed of PCM chips are limited by the cell that has the worst performance. To improve the performance and reduce their cost, it is essential to investigate their failure mechanism. This paper presents an overview of the failure mode and failure mechanism of PCMs induced by electrical operation and manufacture processes, focusing on the issues of electro-migration, thermodynamic effects, phase change stress and thermal stress, voltage polarity, crystallization induced segregation, concentration distribution, heater materials, and the manufacture process.
引文
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[40]Li Y,Song Z,Liu B et al.IEEE Transactions on Semiconductor Manufacturing,2014,27(1):38
[41]Rizzi M,Ciocchini N,Caravati S et al.Statistics of set transition in phase change memory(PCM)arrays.IEEE International Electron Devices Meeting,2014.29.6.1-29.6.4
[42]Meister S,Kim S B,Cha J J et al.ACS Nano,2011,5(4):2742
[43]Jung Y,Nam S W,Agarwal R.Nano letters,2011,11(3):1364
[44]Kim Y T,Kim Y H.Physica Status Solidi B,2014,251(2):435
[45]Calderoni A,Ferro M,Varesi E et al.Investigation of over-reset programming in phase change memory.IEEE International Memory Workshop,2012.1-4
[2]Wong H S P,Raoux S,Kim S B et al.Proceedings of the IEEE,2010,98(12):2201
[3]Cappelletti P.Non volatile memory evolution and revolution.IEEE International Electron Devices Meeting,2015.10.1.1-10.1.4
[4]Kim K,Ahn S J.Reliability investigations for manufacturable high density PRAM.IEEE International Reliability Physics Symposium,2005.In:Proceedings.43rd Annual.IEEE,2005.157-162
[5]Ielmini D,Lacaita A L,Pirovano A et al.IEEE Electron Device Letters,2004,25(7):507
[6]Mantegazza D,Ielmini D,Pirovano A et al.IEEE Electron Device Letters,2007,28(10):865
[7]Mantegazza D,Ielmini D,Pirovano A et al.IEEE Electron Device Letters,2010,31(4):341
[8]Park J B,Park G S,Baik H S et al.Journal of The Electrochemical Society,2007,154(3):H139
[9]Yoon S M,Choi K J,Lee N Y et al.Applied Surface Science,2007,254(1):316
[10]Lee S,Jeong J,Lee T S et al.IEEE Electron Device Letters,2009,30(5):448
[11]Do K,Lee D,Ko D H et al.Electrochemical and Solid-State Letters,2010,13(8):H284
[12]Hong S H,Lee H.Japanese Journal of Applied Physics,2008,47(5R):3372
[13]Park J H,Kim J H,Ko D H et al.Thin Solid Films,2016,616:502
[14]Mantegazza D,Ielmini D,Pirovano A et al.Electrical characterization of anomalous cells in phase change memory arrays.IEEE International Electron Devices Meeting,2006.1-4
[15]Gao D,Liu B,Li Y et al.Journal of Semiconductor,2015,(5):181
[16]Gao D,Liu B,Xu Z et al.Influence of silicon oxide on the performance of Ti N bottom electrode in phase change memory.Proc.of SPIE,2016,9818:981801
[17]Li J T,Liu B,Song Z T et al.Chinese Physics B,2014,23(8):087804
[18]Nam S W,Kim C,Kwon M H et al.Applied Physics Letters,2008,92(11):111913
[19]Nam S W,Lee D,Kwon M H et al.Electrochemical and Solid-State Letters,2009,12(4):H155
[20]Kim C,Kang D,Lee T Y et al.Applied Physics Letters,2009,94(19):193504
[21]Kang D,Lee D,Kim H M et al.Applied Physics Letters,2009,95(1):011904
[22]Yang T Y,Park I M,Kim B J et al.Applied Physics Letters,2009,95(3):032104
[23]Park Y J,Yang T Y,Cho J Y et al.Applied Physics Letters,2013,103(7):073503
[24]Novielli G,Ghetti A,Varesi E et al.IEEE International Electron Devices Meeting,2013.22.3.1-22.3.4
[25]Chen C F,Schrott A,Lee M H et al.IEEE International Memory Workshop,2009.1-2
[26]Park I M,Jung J K,Ryu S O et al.Thin Solid Films,2008,517(2):848
[27]Krusin-Elbaum L,Cabral C,Chen K N et al.Applied Physics Letters,2007,90(14):141902
[28]Lee M H,Cheek R,Chen C F et al.The impact of hole-induced electromigration on the cycling endurance of phase change memory.IEEE International Electron Devices Meeting,2010.28.6.1-28.6.4
[29]Padilla A,Burr G W,Virwani K et al.Voltage polarity effects in GST-based phase change memory:physical origins and implications.IEEE International Electron Devices Meeting,2010.29.4.1-29.4.4
[30]Debunne A,Virwani K,Padilla A et al.Journal of The Electrochemical Society,2011,158(10):H965
[31]Gourvest E,Lhostis S,Kreisel J et al.Applied Physics Letters,2009,95(3):031908
[32]Cabral Jr C,Krusin-Elbaum L,Bruley J et al.Applied Physics Letters,2008,93(7):071906
[33]Zhu M,Wu L,Rao F et al.Applied Physics Letters,2014,104(6):063105
[34]Ji X,Wu L,Lv S et al.Acta Materialia,2014,73:48
[35]Cabral C,Chen K N,Krusin-Elbaum L et al.Applied Physics Letters,2007,90(5):051908
[36]Chen K N,Cabral C,Krusin-Elbaum L.Microelectronic Engineering,2008,85(12):2346
[37]Kim S Y,Lee H S,Chung I S et al.Applied Surface Science,2007,253(8):4041
[38]Alberici S G,Zonca R,Pashmakov B.Applied Surface Science,2004,231:821
[39]Gao D,Liu B,Xu Z et al.ECS Journal of Solid State Science and Technology,2016,5(5):P245
[40]Li Y,Song Z,Liu B et al.IEEE Transactions on Semiconductor Manufacturing,2014,27(1):38
[41]Rizzi M,Ciocchini N,Caravati S et al.Statistics of set transition in phase change memory(PCM)arrays.IEEE International Electron Devices Meeting,2014.29.6.1-29.6.4
[42]Meister S,Kim S B,Cha J J et al.ACS Nano,2011,5(4):2742
[43]Jung Y,Nam S W,Agarwal R.Nano letters,2011,11(3):1364
[44]Kim Y T,Kim Y H.Physica Status Solidi B,2014,251(2):435
[45]Calderoni A,Ferro M,Varesi E et al.Investigation of over-reset programming in phase change memory.IEEE International Memory Workshop,2012.1-4