VO_2薄膜相变温度调节方法及机理
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摘要
VO_2是一种相变温度为68℃(接近室温)的热致相变材料,具有十分广泛的潜在应用价值。但68℃相较于环境温度仍显得较高,而且不同的应用环境对相变温度有不同的需求,因此针对VO_2薄膜相变温度调节问题的研究很有必要。详细介绍了元素掺杂、引入离子液体、氢化处理、界面应力调节等相变温度调节方法并阐述了其各自相变温度调节机理,同时比较了这几种方法的优缺点,并对未来研究方向作出展望,为今后VO2薄膜的制备与应用研究提供了重要参考。
VO_2,a type of thermally induced phase change material,whose phase transition temperature is 68 ℃(closest to room temperature),making it have a very wide potential application value.However,68 ℃is still a bit higher than the actual ambient temperature,and there are different requirements for the phase transition temperature in different application environments.Thus it is essential to research the modulation of the phase change temperature of VO_2 film.Element doping,introducing ionic liquids,hydrogenation processing,interface strain dynamics adjustment method and their mechanism are discussed in this paper.It also compares the advantages and disadvantages of each method,predicts the future research direction,paves a way for the further studies on preparation and application of VO_2 thin film.
VO_2,a type of thermally induced phase change material,whose phase transition temperature is 68 ℃(closest to room temperature),making it have a very wide potential application value.However,68 ℃is still a bit higher than the actual ambient temperature,and there are different requirements for the phase transition temperature in different application environments.Thus it is essential to research the modulation of the phase change temperature of VO_2 film.Element doping,introducing ionic liquids,hydrogenation processing,interface strain dynamics adjustment method and their mechanism are discussed in this paper.It also compares the advantages and disadvantages of each method,predicts the future research direction,paves a way for the further studies on preparation and application of VO_2 thin film.
引文
1 Morin F J.Oxide which show a metal_insulator transition at the neel temperature[J].Phys Rev Lett,1959,13(1):34.
2 张鹏,路远,乔亚.退火对不同基底上氧化钒薄膜电阻的影响[J].半导体光电,2012,33(6):850.
3 Leroux C H,Nihoul G,Van Tendeloo G.From VO2(B)of VO2(R):Theoretical structures of VO2polymorphs and in situ electron microscopy[J].Phy Rev B,1998,57(9):5111.
4 Huang Zhangli,Chen Sihai,Lu Chaohong,et al.Infrared characteristics of VO2thin film for smart window and laser protection applications[J].Appl Phys Lett,2012,101(19):191905
5 蒋群杰,李毅,胡双双,等.基于热光效应的智能窗薄膜材料[J].激光与光电子学进展,2007,44(12):45.
6 李维,武腾飞,王宇.焦平面红外探测器研究进展[J].计测技术,2016,36(1):1.
7 Seo M A,Kyoung J S,Park H R,et al.Terahertz modulation using micro-and nano-apertures on VO2thin film[J].IC Infrared,Millimeter Terahertz Waves,2009,34:1.
8 Marvel R E,Appavoo K,Choi B K,et al.Electron-beam deposition of vanadium dioxide thin films[J].Appl Phys A,2013,111:975.
9 何琼,许向东,温粤江,等.溶胶-凝胶制备氧化钒薄膜的生长机理及光电特性[J].物理学报,2013,62(5):056802.
10 王海方,李毅,蒋群杰,等.脉冲激光沉积法制备二氧化钒薄膜的研究进展[J].激光与光电子学进展,2009(6):48.
11 Fan L L,Chen S,Wu Y F,et al.Growth and phase transition characteristics of pure M-phase VO2 epitaxial film prepared by oxide molecular beam epitaxy[J].Appl Phys Lett,2013,103:131914.
12 吕志军,胡明,陈涛,等.磁控溅射结合快速热处理制备相变氧化钒薄膜[J].材料与结构,2012,49(1):27.
13 赵佳明,边继明,骆英民,等.用于智能激光防护武器的二氧化钒薄膜研究进展[J].兵器材料科学与工程,2011,34(2):102.
14 Marezio M,McWhan D B,et al.Structural aspects of metal-insulator transitions in Cr-doped VO2[J].Phys Rev B,1972,5(7):419.
15 Beteille F,Livage J J.Optical switching in VO2thin films[J].J SolGel Sci Technol,1998,13:915.
16 Miyazaki K,Shibuya K,Suzuki M,et al.Correlation between thermal hysteresis width and broadening of metal-insulator transition in Cr-and Nb-doped VO2films[J].Appl Phys Lett,2014,53:071102.
17 杨玚,路远,杨华,等.二氧化钒薄膜的制备和应用研究新进展激[J].激光与红外,2015,45(8):875.
18 樊乐乐.VO2外延薄膜制备、生长机理及相变温度调控研究[D].合肥:中国科技大学,2014.
19 陈飞虎.VO2相变薄膜的制备和应用研究[D].合肥:中国科技大学,2015.
20 Booth J M,Casey P S.Anisotropic structure deformation in the VO2metal-insulator transition[J].Phys Rev Lett,2009,103:086402.
21 Greenberg C B.Undoped and doped VO2films grown from VO(OC3H7)3[J].Thin solid Films,1983,110:73.
22 Horlin T,Niklewsk T,Nygren M.Magnetic,electrical and thermal studies on V1-xMoxO2system with 0≤x≤0.2[J].Mater Res Bull,1973,8:179.
23 Batista C,Ribeiro V R M,Teixeira.Synthesis and characterization of VO2-based thermos chromic thin films for energy-efficient windows[J].Nanoscale Res Lett,2011,6:301.
24 刘星星.高性能智能窗用掺钨二氧化钒膜系的研制[J].红外,2014,35(8):21.
25 覃源,李毅,方宝英,等.钨钒共溅掺杂而氧化钒薄膜的制备及其光学特性[J].光学学报,2013,33(12):1231002.
26 Chiba D,et al.Electrical control of the ferromagnetic phase transition in cobalt at room temperature[J].Nat Mater,2011(10):853.
27 Chen F H,Fan L L,Chen S,et al.Control of the metal insulator transition in VO2epitaxial film by modifying carrier density[J].ACS Appl Mater Interf,2015,7:6875.
28 Nakano M,Shibuya K,Okuyama D,et al.Collective bulk carrier delocalization driven by electrostatic surface charge accumulation[J].Nature,2012,487:459.
29 Jeong J,Aetukuri N,Graf T,et al.Suppression of metal-insulator transition in VO2by electric field-induced oxygen vacancy formation[J].Science,2013,339:1402.
30 Andreev V N,Kapralova V M,Klimov V A.Effect of hydrogenation on the metal-semiconductor phase transition in vanadium dioxide thin films[J].Phys Solid State,2007,49:2318.
31 Pan X,Zhao Y,et al.Highly conductive VO2treated with hydrogen for super capacitors[J].Inorg Chem Commun,2013,49:3943.
32 Warnick K H,Wang S B,Pantelides T.Hydrogen dynamics and metallic phase stabilization in VO2[J].Appl Phys Lett,2014,104:101913.
33 Lin J,Ji H,Swift M W,et al.Hydrogen diffusion and stabilization in single-crystal VO2 micro/nanobeams by direct atomic hydrogenation[J].Nano Lett,2014,14:5445.
34 Wei J,et al.Hydrogen stabilization of metallic vanadium dioxide in single-crystal nanobeams[J].Nat Nanotechnol,2012,7:357.
35 Hong W K,Park J B,Yoon J.Hydrogen-induced morphotropic phase transformation of single-crystalline vanadium dioxide nanobeams[J].Nano Lett,2013,13:1822.
36 Wu C Z,Feng F,Feng J,et al.Hydrogen-incorporation stabilization of metallic VO2(R)phase to room temperature,displaying promising low-temperature thermoelectric effect[J].J Am Chem Soc,2011,133:13798.
37 Arcangeletti E,Baldassarre L,Castro D D,et al.Evidence of a pressure-induced metallization process in monoclinic VO2[J].Phys Rev Lett,2007,98:196406.
38 Cao J,Ertekin E,Srinivasan V,et al.Strain engineering and onedimensional organization of metal-insulator domains in single-crystal vanadium dioxide beams[J].Nat Nanotechnol,2009,4:732.
39 Muraoka Y,Hiroi Z.Metal-insulator transition of VO2thin films grown on TiO2(001)and(110)substrates[J].Appl Phys Lett,2002,80:583.
40 Nagashima K,Yanagida T,Tanaka H,et al.Stress relaxation effect on transport properties of strained vanadium dioxide epitaxial thin films[J].Phys Rev B,2006,74:172106.
41 Aetukuri N,Gray A X,Drouard M,et al.Contol of the metal-insulator transition in vanadium dioxide by modifying orbital occupancy[J].Nat Phys,2013,9:661.
42 Fan L L,Chen S,Luo Z L,et al.Correction to strain dynamics of ultrathin VO2film grown on TiO2(001)and the associated phase transition modulation[J].Nano Lett,2014,14:5478.
2 张鹏,路远,乔亚.退火对不同基底上氧化钒薄膜电阻的影响[J].半导体光电,2012,33(6):850.
3 Leroux C H,Nihoul G,Van Tendeloo G.From VO2(B)of VO2(R):Theoretical structures of VO2polymorphs and in situ electron microscopy[J].Phy Rev B,1998,57(9):5111.
4 Huang Zhangli,Chen Sihai,Lu Chaohong,et al.Infrared characteristics of VO2thin film for smart window and laser protection applications[J].Appl Phys Lett,2012,101(19):191905
5 蒋群杰,李毅,胡双双,等.基于热光效应的智能窗薄膜材料[J].激光与光电子学进展,2007,44(12):45.
6 李维,武腾飞,王宇.焦平面红外探测器研究进展[J].计测技术,2016,36(1):1.
7 Seo M A,Kyoung J S,Park H R,et al.Terahertz modulation using micro-and nano-apertures on VO2thin film[J].IC Infrared,Millimeter Terahertz Waves,2009,34:1.
8 Marvel R E,Appavoo K,Choi B K,et al.Electron-beam deposition of vanadium dioxide thin films[J].Appl Phys A,2013,111:975.
9 何琼,许向东,温粤江,等.溶胶-凝胶制备氧化钒薄膜的生长机理及光电特性[J].物理学报,2013,62(5):056802.
10 王海方,李毅,蒋群杰,等.脉冲激光沉积法制备二氧化钒薄膜的研究进展[J].激光与光电子学进展,2009(6):48.
11 Fan L L,Chen S,Wu Y F,et al.Growth and phase transition characteristics of pure M-phase VO2 epitaxial film prepared by oxide molecular beam epitaxy[J].Appl Phys Lett,2013,103:131914.
12 吕志军,胡明,陈涛,等.磁控溅射结合快速热处理制备相变氧化钒薄膜[J].材料与结构,2012,49(1):27.
13 赵佳明,边继明,骆英民,等.用于智能激光防护武器的二氧化钒薄膜研究进展[J].兵器材料科学与工程,2011,34(2):102.
14 Marezio M,McWhan D B,et al.Structural aspects of metal-insulator transitions in Cr-doped VO2[J].Phys Rev B,1972,5(7):419.
15 Beteille F,Livage J J.Optical switching in VO2thin films[J].J SolGel Sci Technol,1998,13:915.
16 Miyazaki K,Shibuya K,Suzuki M,et al.Correlation between thermal hysteresis width and broadening of metal-insulator transition in Cr-and Nb-doped VO2films[J].Appl Phys Lett,2014,53:071102.
17 杨玚,路远,杨华,等.二氧化钒薄膜的制备和应用研究新进展激[J].激光与红外,2015,45(8):875.
18 樊乐乐.VO2外延薄膜制备、生长机理及相变温度调控研究[D].合肥:中国科技大学,2014.
19 陈飞虎.VO2相变薄膜的制备和应用研究[D].合肥:中国科技大学,2015.
20 Booth J M,Casey P S.Anisotropic structure deformation in the VO2metal-insulator transition[J].Phys Rev Lett,2009,103:086402.
21 Greenberg C B.Undoped and doped VO2films grown from VO(OC3H7)3[J].Thin solid Films,1983,110:73.
22 Horlin T,Niklewsk T,Nygren M.Magnetic,electrical and thermal studies on V1-xMoxO2system with 0≤x≤0.2[J].Mater Res Bull,1973,8:179.
23 Batista C,Ribeiro V R M,Teixeira.Synthesis and characterization of VO2-based thermos chromic thin films for energy-efficient windows[J].Nanoscale Res Lett,2011,6:301.
24 刘星星.高性能智能窗用掺钨二氧化钒膜系的研制[J].红外,2014,35(8):21.
25 覃源,李毅,方宝英,等.钨钒共溅掺杂而氧化钒薄膜的制备及其光学特性[J].光学学报,2013,33(12):1231002.
26 Chiba D,et al.Electrical control of the ferromagnetic phase transition in cobalt at room temperature[J].Nat Mater,2011(10):853.
27 Chen F H,Fan L L,Chen S,et al.Control of the metal insulator transition in VO2epitaxial film by modifying carrier density[J].ACS Appl Mater Interf,2015,7:6875.
28 Nakano M,Shibuya K,Okuyama D,et al.Collective bulk carrier delocalization driven by electrostatic surface charge accumulation[J].Nature,2012,487:459.
29 Jeong J,Aetukuri N,Graf T,et al.Suppression of metal-insulator transition in VO2by electric field-induced oxygen vacancy formation[J].Science,2013,339:1402.
30 Andreev V N,Kapralova V M,Klimov V A.Effect of hydrogenation on the metal-semiconductor phase transition in vanadium dioxide thin films[J].Phys Solid State,2007,49:2318.
31 Pan X,Zhao Y,et al.Highly conductive VO2treated with hydrogen for super capacitors[J].Inorg Chem Commun,2013,49:3943.
32 Warnick K H,Wang S B,Pantelides T.Hydrogen dynamics and metallic phase stabilization in VO2[J].Appl Phys Lett,2014,104:101913.
33 Lin J,Ji H,Swift M W,et al.Hydrogen diffusion and stabilization in single-crystal VO2 micro/nanobeams by direct atomic hydrogenation[J].Nano Lett,2014,14:5445.
34 Wei J,et al.Hydrogen stabilization of metallic vanadium dioxide in single-crystal nanobeams[J].Nat Nanotechnol,2012,7:357.
35 Hong W K,Park J B,Yoon J.Hydrogen-induced morphotropic phase transformation of single-crystalline vanadium dioxide nanobeams[J].Nano Lett,2013,13:1822.
36 Wu C Z,Feng F,Feng J,et al.Hydrogen-incorporation stabilization of metallic VO2(R)phase to room temperature,displaying promising low-temperature thermoelectric effect[J].J Am Chem Soc,2011,133:13798.
37 Arcangeletti E,Baldassarre L,Castro D D,et al.Evidence of a pressure-induced metallization process in monoclinic VO2[J].Phys Rev Lett,2007,98:196406.
38 Cao J,Ertekin E,Srinivasan V,et al.Strain engineering and onedimensional organization of metal-insulator domains in single-crystal vanadium dioxide beams[J].Nat Nanotechnol,2009,4:732.
39 Muraoka Y,Hiroi Z.Metal-insulator transition of VO2thin films grown on TiO2(001)and(110)substrates[J].Appl Phys Lett,2002,80:583.
40 Nagashima K,Yanagida T,Tanaka H,et al.Stress relaxation effect on transport properties of strained vanadium dioxide epitaxial thin films[J].Phys Rev B,2006,74:172106.
41 Aetukuri N,Gray A X,Drouard M,et al.Contol of the metal-insulator transition in vanadium dioxide by modifying orbital occupancy[J].Nat Phys,2013,9:661.
42 Fan L L,Chen S,Luo Z L,et al.Correction to strain dynamics of ultrathin VO2film grown on TiO2(001)and the associated phase transition modulation[J].Nano Lett,2014,14:5478.