CuInSe_2薄膜制备方法、结构及其性能的研究进展
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摘要
综述了CuInSe_2薄膜的制备方法及进展,介绍了电化学沉积法、真空蒸镀法、磁控溅射法以及分子束外延法等各种CuInSe_2薄膜的制备方法。评述了各种制备工艺的优缺点。介绍了CuInSe_2薄膜在组织结构方面的研究现状,最后对CuInSe_2薄膜的电学、光学以及光电性能等方面的研究进展进行了介绍。
The preparation methods and development of CuInSe_2 film were reviewed. Some kinds of preparation methods for CuInSe_2 film, such as electrochemical deposition, vacuum deposition method, magnetron sputtering and molecular beam epitaxy were introduced. In addition, the advantages and disadvantages of all sorts of preparation methods were discussed. The research status of CuInSe_2 films in structure was introduced. Finally, the progress of the properties of CuInSe_2 film such as electrical, optical and photoelectrical properties were introduced.
The preparation methods and development of CuInSe_2 film were reviewed. Some kinds of preparation methods for CuInSe_2 film, such as electrochemical deposition, vacuum deposition method, magnetron sputtering and molecular beam epitaxy were introduced. In addition, the advantages and disadvantages of all sorts of preparation methods were discussed. The research status of CuInSe_2 films in structure was introduced. Finally, the progress of the properties of CuInSe_2 film such as electrical, optical and photoelectrical properties were introduced.
引文
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[27]何萌,刘国珍,仇杰,等.用激光分子束外延在Si衬底上外延生长高质量的Ti N薄膜[J].物理学报,2008,57(2):1236-1240.
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[29]陈超铭,范平,梁广兴,等.铜铟镓硒薄膜太阳电池的研究进展[J].真空科学与技术学报,2013,33(10):1012-1013.
[30]马光耀,康志君,谢元锋.铜铟镓硒薄膜太阳能电池的研究进展及发展前景[J].金属功能材料,2009,16(5):46-49.
[31]肖健平,何青.CIS/CIGS薄膜材料研究进展[J].西南民族大学学报:自然科学版,2008,34(1):189-193.
[32]季秉厚,罗永胜,李蓉萍.Cu In Se2薄膜特性研究[J].太阳能学报,1991,12(1):33-40.
[33]郑史烈,吴年强,李志章.太阳能电池材料Cu-In-Se的研究现状[J].材料导报,1997,11(3):14-17.
[34]单玉桥,党鹏,孙绍广,等.三元共蒸法制备CIS薄膜及其性能研究[J].东北大学学报,2009,30(2):233-237.
[35]杨静,马鸿文.Se化Cu2In2O5法制备Cu In Se2薄膜的机理及性能研究[J].功能材料,2000,31(2):146-148.
[36]李文漪,蔡珣,陈秋龙.CIS光伏材料的发展[J].机械工程材料,2003,27(6):1-7.
[37]Matsushita H,Taakizawa T.Studies on monocrystalline Cu In Se2and Cu In3Se5[J].Journal of Crystal Growth,1997,179:503-509.
[38]Zegadi A,Yakushev M V,Ahmed E.Effect of Se content on defect levels in Cu In Se2single crystals detected by photoacoustic spectrometry[C]//Conference record of the tewnty fourth.IEEE photovoltaic specialists Waikoloa,USA:IEEE,1994.
[2]Li Y,Wang H,Feng Q Y,et a.Gold Nanoparticles Inlaid Ti O2Photoanodes:A superior candidate for high-efficiency dye-sensitized solar cells[J].Energy and Environmental Science,2013(6):2156-2165.
[3]Mei A Y,Li X,Liu L F,et a.A hole-conductor-free,fully printable mesoscopic perovskite solar cell with high stability[J.Science,2014,345(6194):295-298.
[4]Chen H W,Pan X,Liu W Q,et a.Efficient panchromatic inorganic-organic heterojunction solar cells with consecutive charge transport tunnels in hole transport material[J].Chemical Communications,2013,49:7277-7279.
[5]Vishnyakov V M,Bachurin V I,Minnebaev K F,et a.Ion assisted deposition of titanium chromium nitride[J].Thin Solid Films,2006,497(1/2):189-195.
[6]沈倩倩,潘育松.生物功能梯度材料的制备技术及性能评价[J].热加工工艺,2015,44(14):21-24.
[7]王恩东,王磊:新型镁基干电池负极材料的电化学性能研究[J].热加工工艺,2015,44(14):111-113.
[8]Rega N,Siebentritt S,Beckersl E,et a.Growth and transport properties of Cu In Se2/Zn O heterostructure solar cell[J].Materials Science and Engineering B,2006,127(1):12-16:
[9]黄丽娜,王优,罗四海,等.纳米金属氧化物制备新进展[J].热加工工艺,2015(12):23-26.
[10]范彬,文明才,廖建勇.弛豫退火对非晶合金晶化及磁性能的影响[J].热加工工艺,2015(12):187-189.
[11]Jehad A M,Shama A,Johnston S,et al.Bandlike and localized defect states in Cu In Se2solar cells[J].Journal of Physics and Chemistry of Solids,2005,66(11):1855-1857.
[12]滕华湘,王川,康永林.组织及相结构对GA板镀层成形性的影响[J].热加工工艺,2015,44(12):170-173.
[13]朱晓晶,马建华,姚娘娟,等.Cu In Se2薄膜的化学溶液制备方法[J].红外与毫米波学报,2014,33(3):231-236.
[14]张治安,刘芳洋,吕莹,等.电沉积法制备Cu In Se2薄膜的组成与形貌[J].中国有色金属学报,2007,17(4):560-566.
[15]王伟君,何俊,张克智,等.单靶磁控溅射制备铜铟硒和铜铟锌硒薄膜及其结构、光学性质研究[J].无机材料学报,2014,29(11):1223-1227.
[16]陈燕,邓爱红,汤宝,等.掺Te的Ga Sb薄膜分子束外延生长及缺陷特性[J].红外与毫米波学报,2012,31(4):298-301.
[17]李庆阳,安茂忠,杨培霞,等.电沉积CIGS太阳能电池吸收层的研究现状、问题及发展趋势[J].电镀与涂饰,2013,32(12):1-9.
[18]陶华超,杜晶晶,龙飞,等.电沉积Cu In Se2(CIS)薄膜材料的组成与形貌[J].电源技术,2009,33(3):165-168.
[19]周学东,赵修建,夏冬林,等.电沉积制备Cu In Se2薄膜及性能研究[J].武汉理工大学学报,2005,27(7):4-6.
[20]蒋方丹,冯嘉猷.铜铟硒薄膜太阳能电池的几个基础问题研究[J].前沿进展,2006,35(11):957-960.
[21]魏晋云,廖华,王东城.三源真空共蒸发沉积Cu In Se2薄膜[J].材料科学进展,1991,5(6):472-476.
[22]郑春满,郭宇杰,谢凯,等.薄膜太阳能电池光电转换材料研究进展[J].宇航材料工艺,2010(4):10-15.
[23]徐知之,夏文建,黄文良.铜铟硒(CIS)薄膜太阳电池研究进展[J].真空,2006,43(2):13-17.
[24]范平,郑壮豪,张东平,等.离子束溅射制备Cu In Se2薄膜的研究[J].真空科学与技术学报,2009,29(6):659-663.
[25]杨左袁.分子束外延技术[J].长春师院学报(自然科学版),1995(2):23-24.
[26]龚琰民.分子束外延法及离子束溅射法生长Cd Te和Hg Cd Te膜的比较[J].红外与激光技术,1991(2):35-46.
[27]何萌,刘国珍,仇杰,等.用激光分子束外延在Si衬底上外延生长高质量的Ti N薄膜[J].物理学报,2008,57(2):1236-1240.
[28]Shay J L,Wernick J H.Termary chalcopyrite Semiconductors:Growth Electronic Propertties and Application[M].New York:Pergamon Press,1995.
[29]陈超铭,范平,梁广兴,等.铜铟镓硒薄膜太阳电池的研究进展[J].真空科学与技术学报,2013,33(10):1012-1013.
[30]马光耀,康志君,谢元锋.铜铟镓硒薄膜太阳能电池的研究进展及发展前景[J].金属功能材料,2009,16(5):46-49.
[31]肖健平,何青.CIS/CIGS薄膜材料研究进展[J].西南民族大学学报:自然科学版,2008,34(1):189-193.
[32]季秉厚,罗永胜,李蓉萍.Cu In Se2薄膜特性研究[J].太阳能学报,1991,12(1):33-40.
[33]郑史烈,吴年强,李志章.太阳能电池材料Cu-In-Se的研究现状[J].材料导报,1997,11(3):14-17.
[34]单玉桥,党鹏,孙绍广,等.三元共蒸法制备CIS薄膜及其性能研究[J].东北大学学报,2009,30(2):233-237.
[35]杨静,马鸿文.Se化Cu2In2O5法制备Cu In Se2薄膜的机理及性能研究[J].功能材料,2000,31(2):146-148.
[36]李文漪,蔡珣,陈秋龙.CIS光伏材料的发展[J].机械工程材料,2003,27(6):1-7.
[37]Matsushita H,Taakizawa T.Studies on monocrystalline Cu In Se2and Cu In3Se5[J].Journal of Crystal Growth,1997,179:503-509.
[38]Zegadi A,Yakushev M V,Ahmed E.Effect of Se content on defect levels in Cu In Se2single crystals detected by photoacoustic spectrometry[C]//Conference record of the tewnty fourth.IEEE photovoltaic specialists Waikoloa,USA:IEEE,1994.