空间太阳电池阵用ITO玻璃盖片工艺探索
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摘要
ITO薄膜即铟锡氧化物(Indium Tin Oxides)半导体透明导电膜,有良好的导电性,高的透过率,并且具有很高的可靠性,可应用于航天领域电磁监测卫星的太阳电池板上以控制其表面电位。针对航天器太阳电池阵用ITO薄膜的真空蒸镀法制备进行工艺优化,通过选用合适的蒸镀速率和退火条件得到具有较低电阻率、较高透过率并且与空间用三结砷化镓太阳电池相匹配的ITO盖片产品。
ITO thin film, namely the transparent conductive film of indium tin oxides, has the characteristics of excellent electric conductivity, high transparency and high reliability. It can be applied to solar panels of spacecrafts to detect the electromagnetic field and control the surface potential. The process of ITO film vacuum evaporation method was optimized. By selecting suitable evaporation rate and annealing condition, the ITO cover glass sheet was obtained with lower resistivity and higher transmittance, matching the 3-junction GaAs solar cell.
ITO thin film, namely the transparent conductive film of indium tin oxides, has the characteristics of excellent electric conductivity, high transparency and high reliability. It can be applied to solar panels of spacecrafts to detect the electromagnetic field and control the surface potential. The process of ITO film vacuum evaporation method was optimized. By selecting suitable evaporation rate and annealing condition, the ITO cover glass sheet was obtained with lower resistivity and higher transmittance, matching the 3-junction GaAs solar cell.
引文
[1]赵颖,刘松喆,金海雯.电磁检测卫星太阳电池阵表面等电位控制[J].电源技术,2014,38(2):276-278.
[2]姜辛,孙超,洪瑞江,等.透明导电氧化物薄膜[M].北京:高等教育出版社,2008:153-163.
[3]FALLAH H R,GHASEMI M,HASSANZADEH A,et al.The effect of deposition rate on electrical,optical and structure properties of ITO films on glass at low substrate temperature[J].Physical B,2006,373:274-279.
[4]张庆丰,谷锦华,郭学军,等.快速光退火堆ITO薄膜结构和性能的改善[J].光电子技术,2008,28(1):60-64.
[5]MENG L J,SANTOS M P D.Properties of indium tin oxide films prepared by rf reactive magnetron sputtering at different substrate temperature[J].Thin Solid Film,1998,322:56-62.
[6]许旻,邱家稳,贺德衍.退火对反应磁控溅射制备ITO薄膜性能影响[J].真空科学与技术,2003,23(3):161-164.
[7]孟庆哲,方允樟,马云.退火温度对ITO导电薄膜电导率的影响[J].材料科学,2013(3):45-49.
[8]王丹娜.太阳电池阵表面等电位工艺技术研究[J].电源技术,2017,41(6):881-883.
[2]姜辛,孙超,洪瑞江,等.透明导电氧化物薄膜[M].北京:高等教育出版社,2008:153-163.
[3]FALLAH H R,GHASEMI M,HASSANZADEH A,et al.The effect of deposition rate on electrical,optical and structure properties of ITO films on glass at low substrate temperature[J].Physical B,2006,373:274-279.
[4]张庆丰,谷锦华,郭学军,等.快速光退火堆ITO薄膜结构和性能的改善[J].光电子技术,2008,28(1):60-64.
[5]MENG L J,SANTOS M P D.Properties of indium tin oxide films prepared by rf reactive magnetron sputtering at different substrate temperature[J].Thin Solid Film,1998,322:56-62.
[6]许旻,邱家稳,贺德衍.退火对反应磁控溅射制备ITO薄膜性能影响[J].真空科学与技术,2003,23(3):161-164.
[7]孟庆哲,方允樟,马云.退火温度对ITO导电薄膜电导率的影响[J].材料科学,2013(3):45-49.
[8]王丹娜.太阳电池阵表面等电位工艺技术研究[J].电源技术,2017,41(6):881-883.