ESD防护器件HMM和TLP测试方法及性能评价
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摘要
人体–金属模型波形(HMM)和传输线脉冲(TLP)波形是静电放电防护器件测试时常用的注入波形。针对静电放电(ESD)防护器件,介绍了这2种波形的测试方法。通过对同一型号瞬态电压抑制器进行测量,获取器件的瞬态波形、钳位电压、损伤阈值、瞬态阻抗等特性参数,并对结果进行分析比较。测试结果表明,基于IEC标准的HMM测试所能得到的有效信息最少;基于TLP的HMM测试可直观得到被测器件的静电放电瞬态响应;TLP矩形波测试结果的稳定性好,测量参数的可重复性高。
Human-metal model(HMM) and transmission line pulse(TLP) current waveforms are widely used for electrostatic discharge(ESD) protection devices testing. This paper introduced the ESD protection diodes test methods based on these two kinds of waveforms. In the paper, a type of transient voltage suppressor was tested. Transient waveforms, clamping voltage, threshold and transient resistance were obtained. According to the results, IEC 61000-4-2 based HMM test obtains the minimum effective information; TLP-based HMM test can intuitively provide the DUT transient response during ESD; While TLP test result is more repeatable with good repeatability of measured parameters.
Human-metal model(HMM) and transmission line pulse(TLP) current waveforms are widely used for electrostatic discharge(ESD) protection devices testing. This paper introduced the ESD protection diodes test methods based on these two kinds of waveforms. In the paper, a type of transient voltage suppressor was tested. Transient waveforms, clamping voltage, threshold and transient resistance were obtained. According to the results, IEC 61000-4-2 based HMM test obtains the minimum effective information; TLP-based HMM test can intuitively provide the DUT transient response during ESD; While TLP test result is more repeatable with good repeatability of measured parameters.
引文
[1]刘尚合,武占成,朱长青,等.静电放电及危害防护[M].北京:北京邮电大学出版社,2004.LIU Shanghe,WU Zhancheng,ZHU Changqing,et al.ESP and hazard protection[M].Beijing,China:Beijing University of Posts and Telecommunication Press,2004.
[2]刘尚合,刘卫东.电磁兼容与电磁防护相关研究进展[J].高电压技术,2014,40(6):1605-1613.LIU Shanghe,LIU Weidong.Process of relevant research on electromagnetic compatibility and electromagnetic protection[J].High Voltage Engineering,2014,40(6):1605-1613.
[3]郭瑶,徐晓英,叶宇辉,等.TVS二极管标称参数与静电放电防护能力研究[J].固体电子学研究与进展,2015,35(4):382-387.GUO Yao,XU Xiaoying,YE Yuhui,et al.Study on the relation between TVS nominal parameters and its protection ability[J].Research&Progress of SSE,2015,35(4):382-387.
[4]YANG J,ZAHNG X J,DONG K N.Influence of package form on electromagnetic pulse protective characteristics of transient voltage suppressor transistor[J].High Voltage Engineering,2014,40(6):1683-1687.
[5]张希军,董康宁,杨洁.不同特征频率高频硅双极晶体管静电放电机器模型敏感特性[J].高电压技术,2015,41(5):1631-1636.ZHANG Xijun,DONG Kangning,YANG Jie.Machine model ESD sensitivity of different characteristic frequency high-frequency silicon bipolar transistors[J].High Voltage Engineering,2015,41(5):1631-1636.
[6]ESD association standard test method for electrostatic discharge sensitivity testing human body model(HBM)component level:ANSI/ESD STM5[S],2007.
[7]韩雁,霍明旭,宋波.静电放电人体模型测试标准EIA/JEDEC中的问题研究[J].中国集成电路,2009,18(6):56-61.HAN Yan,HUO Mingxu,SONG Bo.A case study of problems in EIA/JEDEC HBM ESD test standard[J].China Integrated Circuit,2009,18(6):56-61.
[8]International Electro Technical Commission.Testing and measurement technique—electrostatic discharge immunity test:IEC61000-4-2[S],2001.
[9]ESD association standard test method for electrostatic discharge(ESD)sensitivity testing–transmission lin pulse(TLP)–component level:ANSI/ESD STM 5.5.1[S],2014.
[10]梁振光,杨明远.传输线脉冲发生器研制及其对电路板抗静电放电干扰的测试[J].高电压技术,2015,41(5):1610-1617.LIANG Zhenguang,YANG Mingyuan.Development of transmission line pulser and its immunity test for electrostatic discharge on printed circuit board[J].High Voltage Engineering,2015,41(5):1610-1617.
[11]鄢永明,曾云,夏宇,等.维持电压和失效电流线性可调节的高压ESD器件[J].电子科技大学学报,2015,44(5):700-704.YAN Yongming,ZENG Yun,XIA Yu,et al.Investigation of high voltage electrostatic discharge devices with adjustable holding voltages and failure currents[J].Journal of University of Electronic Science and Technology of China,2015,44(5):700-704.
[12]黄龙,梁海莲,顾晓峰,等.多晶硅栅对LDMOS-SCR器件ESD防护性能的影响[J].浙江大学学报(工学版),2015,49(2):366-370.HUANG Long,LIANG Hailian,GU Xiaofeng,et al.Effect of poly-silicon gate on ESD protection performance of LDMOS-SCR devices[J].Journal of Zhejiang University(Engineering Science),2015,49(2):366-370.
[13]罗广孝,崔翔,张卫东,等.TVS静电抑制器等效电路参数估算及应用[J].中国电机工程学报,2013,33(16):204-211.LUO Guangxiao,CUI Xiang,ZHANG Weidong,et al.Equivalent circuit parameter estimation and application of TVS electrostatic discharge suppressor[J].Proceedings of the CSEE,2013,33(16):204-211.
[14]王源,张立忠,曹健,等.隧道场效应晶体管静电放电冲击特性研究[J].物理学报,2014,63(17):178501.WANG Yuan,ZHANG Lizhong,CAO Jian,et al.Research on electrostatic discharge characteristics of tunnel field effect transistors[J].Acta Physica Sinica,2014,63(17):178501.
[15]吴晓鹏,杨银堂,刘海霞,等.沟道尺寸对深亚微米GGNMOS保护器件特性的影响[J].西安电子科技大学学报(自然科学版),2015,42(6):113-117.WU Xiaopeng,YANG Yintang,LIU Haixia,et al.Research on the influence of the channel dimension on the characteristics of the gate grounded NMOS protection device[J].Journal of Xidian University(Natural Science),2015,42(6):113-117.
[16]BEGES R,CAIGNET F,BESSE P,et al.TLP-based human metal model stress generator and analysis method of ESD generators[C]∥Electrical Overstress/Electrostatic Discharge Symposium.Reno,USA:IEEE,2015:1-10.
[17]马立云,谭志良,宋培姣,等.3DG81B在静电放电作用下损伤效应与机理分析[J].高电压技术,2015,41(12):4191-4197.MA Liyun,TAN Zhiliang,SONG Peijiao,et al.The damage effect and mechanism of 3DG81B induced by ESD[J].High Voltage Engineering,2015,41(12):4191-4197.
[18]徐晓英,刘尚合,武占成,等.IEC61000-4-2规定的实验平台与方法的局限性[J].高电压技术,2005,31(6):32-35.XU Xiaoying,LIU Shanghe,WU Zhancheng,et al.Limit in test platform and in experiment method defined by IEC 61000-4-2[J].High Voltage Engineering,2005,31(6):32-35.
[19]张燕奇,赵春燕,高攸纲.PESD测试中静电枪表现的性能的研究[J].环境技术,2014,4(增刊):191-194.ZHANG Yanqi,ZHAO Chunyan,GAO Yougang.Study on the performance of ESD gun in testing[J].Environmental Technology,2014,4(Supplement):191-194.
[20]刘尚合,徐晓英.IEC标准与ESD抗扰度实验方法研究[J].军械工程学院学报,2005,17(1):1-6.LIU Shanghe,XU Xiaoying.Study on IEC standard and ESD immunity testing method[J].Journal of Ordnance Engineering College,2005,17(1):1-6.
[21]SCHOLZ M,CHEN S H,JOHNSSON D,et al.Miscorrelation between IEC61000-4-2 type of HMM tester and 50?HMM tester[C]∥Electrical Overstress/Electrostatic Discharge Symposium.Tucson,USA:IEEE,2012:1-9.
[2]刘尚合,刘卫东.电磁兼容与电磁防护相关研究进展[J].高电压技术,2014,40(6):1605-1613.LIU Shanghe,LIU Weidong.Process of relevant research on electromagnetic compatibility and electromagnetic protection[J].High Voltage Engineering,2014,40(6):1605-1613.
[3]郭瑶,徐晓英,叶宇辉,等.TVS二极管标称参数与静电放电防护能力研究[J].固体电子学研究与进展,2015,35(4):382-387.GUO Yao,XU Xiaoying,YE Yuhui,et al.Study on the relation between TVS nominal parameters and its protection ability[J].Research&Progress of SSE,2015,35(4):382-387.
[4]YANG J,ZAHNG X J,DONG K N.Influence of package form on electromagnetic pulse protective characteristics of transient voltage suppressor transistor[J].High Voltage Engineering,2014,40(6):1683-1687.
[5]张希军,董康宁,杨洁.不同特征频率高频硅双极晶体管静电放电机器模型敏感特性[J].高电压技术,2015,41(5):1631-1636.ZHANG Xijun,DONG Kangning,YANG Jie.Machine model ESD sensitivity of different characteristic frequency high-frequency silicon bipolar transistors[J].High Voltage Engineering,2015,41(5):1631-1636.
[6]ESD association standard test method for electrostatic discharge sensitivity testing human body model(HBM)component level:ANSI/ESD STM5[S],2007.
[7]韩雁,霍明旭,宋波.静电放电人体模型测试标准EIA/JEDEC中的问题研究[J].中国集成电路,2009,18(6):56-61.HAN Yan,HUO Mingxu,SONG Bo.A case study of problems in EIA/JEDEC HBM ESD test standard[J].China Integrated Circuit,2009,18(6):56-61.
[8]International Electro Technical Commission.Testing and measurement technique—electrostatic discharge immunity test:IEC61000-4-2[S],2001.
[9]ESD association standard test method for electrostatic discharge(ESD)sensitivity testing–transmission lin pulse(TLP)–component level:ANSI/ESD STM 5.5.1[S],2014.
[10]梁振光,杨明远.传输线脉冲发生器研制及其对电路板抗静电放电干扰的测试[J].高电压技术,2015,41(5):1610-1617.LIANG Zhenguang,YANG Mingyuan.Development of transmission line pulser and its immunity test for electrostatic discharge on printed circuit board[J].High Voltage Engineering,2015,41(5):1610-1617.
[11]鄢永明,曾云,夏宇,等.维持电压和失效电流线性可调节的高压ESD器件[J].电子科技大学学报,2015,44(5):700-704.YAN Yongming,ZENG Yun,XIA Yu,et al.Investigation of high voltage electrostatic discharge devices with adjustable holding voltages and failure currents[J].Journal of University of Electronic Science and Technology of China,2015,44(5):700-704.
[12]黄龙,梁海莲,顾晓峰,等.多晶硅栅对LDMOS-SCR器件ESD防护性能的影响[J].浙江大学学报(工学版),2015,49(2):366-370.HUANG Long,LIANG Hailian,GU Xiaofeng,et al.Effect of poly-silicon gate on ESD protection performance of LDMOS-SCR devices[J].Journal of Zhejiang University(Engineering Science),2015,49(2):366-370.
[13]罗广孝,崔翔,张卫东,等.TVS静电抑制器等效电路参数估算及应用[J].中国电机工程学报,2013,33(16):204-211.LUO Guangxiao,CUI Xiang,ZHANG Weidong,et al.Equivalent circuit parameter estimation and application of TVS electrostatic discharge suppressor[J].Proceedings of the CSEE,2013,33(16):204-211.
[14]王源,张立忠,曹健,等.隧道场效应晶体管静电放电冲击特性研究[J].物理学报,2014,63(17):178501.WANG Yuan,ZHANG Lizhong,CAO Jian,et al.Research on electrostatic discharge characteristics of tunnel field effect transistors[J].Acta Physica Sinica,2014,63(17):178501.
[15]吴晓鹏,杨银堂,刘海霞,等.沟道尺寸对深亚微米GGNMOS保护器件特性的影响[J].西安电子科技大学学报(自然科学版),2015,42(6):113-117.WU Xiaopeng,YANG Yintang,LIU Haixia,et al.Research on the influence of the channel dimension on the characteristics of the gate grounded NMOS protection device[J].Journal of Xidian University(Natural Science),2015,42(6):113-117.
[16]BEGES R,CAIGNET F,BESSE P,et al.TLP-based human metal model stress generator and analysis method of ESD generators[C]∥Electrical Overstress/Electrostatic Discharge Symposium.Reno,USA:IEEE,2015:1-10.
[17]马立云,谭志良,宋培姣,等.3DG81B在静电放电作用下损伤效应与机理分析[J].高电压技术,2015,41(12):4191-4197.MA Liyun,TAN Zhiliang,SONG Peijiao,et al.The damage effect and mechanism of 3DG81B induced by ESD[J].High Voltage Engineering,2015,41(12):4191-4197.
[18]徐晓英,刘尚合,武占成,等.IEC61000-4-2规定的实验平台与方法的局限性[J].高电压技术,2005,31(6):32-35.XU Xiaoying,LIU Shanghe,WU Zhancheng,et al.Limit in test platform and in experiment method defined by IEC 61000-4-2[J].High Voltage Engineering,2005,31(6):32-35.
[19]张燕奇,赵春燕,高攸纲.PESD测试中静电枪表现的性能的研究[J].环境技术,2014,4(增刊):191-194.ZHANG Yanqi,ZHAO Chunyan,GAO Yougang.Study on the performance of ESD gun in testing[J].Environmental Technology,2014,4(Supplement):191-194.
[20]刘尚合,徐晓英.IEC标准与ESD抗扰度实验方法研究[J].军械工程学院学报,2005,17(1):1-6.LIU Shanghe,XU Xiaoying.Study on IEC standard and ESD immunity testing method[J].Journal of Ordnance Engineering College,2005,17(1):1-6.
[21]SCHOLZ M,CHEN S H,JOHNSSON D,et al.Miscorrelation between IEC61000-4-2 type of HMM tester and 50?HMM tester[C]∥Electrical Overstress/Electrostatic Discharge Symposium.Tucson,USA:IEEE,2012:1-9.