界面调控二维六方氮化硼单晶外延生长取得新进展
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  • 英文篇名:New progress of the epitaxy of two dimensional single-crystal hexagonal boron nitride by interface regulation
  • 作者:吴克辉
  • 英文作者:Kehui Wu;State Key Laboratory of Surface Physics, Institute of Physics, Chinese Academy of Sciences;
  • 中文刊名:KXTB
  • 英文刊名:Chinese Science Bulletin
  • 机构:中国科学院物理研究所,表面物理国家重点实验室;
  • 出版日期:2019-07-04 13:18
  • 出版单位:科学通报
  • 年:2019
  • 期:v.64
  • 语种:中文;
  • 页:KXTB201921001
  • 页数:3
  • CN:21
  • ISSN:11-1784/N
  • 分类号:7-9
摘要
<正>近年来,随着芯片内元器件尺寸的不断减小,短沟道效应、热效应等日趋明显,开发全新的二维量子材料体系以实现变革性的器件应用已成为当前的研究热点.高端器件的规模化应用必须基于大面积、高品质的单晶材料,因此二维单晶材料的制备研究具有重要的科学意义和技术价值.2019年5月22日,Nature在线发表了题为"Epitaxial
        
引文
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    9 Song X, Gao J, Nie Y, et al. Chemical vapor deposition growth of large-scale hexagonal boron nitride with controllable orientation. Nano Res, 2015, 8:3164–3176

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