碳化硼研磨后蓝宝石晶体的亚表面损伤
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摘要
介绍了蓝宝石材料的亚表面损伤形成机制。考虑碳化硼磨料可产生较小亚表面损伤的优点,本文基于游离磨料研磨方式,研究了不同粒度碳化硼磨料研磨后蓝宝石晶体的亚表面损伤。利用KOH化学腐蚀处理技术,对研磨后的样品进行了刻蚀;通过特定的腐蚀坑图像间接反映了蓝宝石晶体的亚表面损伤形貌特征,获得了W20、W10和W5碳化硼磨料产生的亚表面损伤深度,得到了在不同刻蚀时间下蓝宝石亚表面损伤形貌、表面粗糙度和刻蚀速率。研究结果显示:游离碳化硼磨料研磨造成的蓝宝石晶体的亚表面损伤密度相当显著,但损伤深度并不大,其随磨料粒度的增大而增大,W20、W10和W5粒度的磨料研磨后产生的亚表面损伤深度分别为7.4,4.1和2.9μm,约为磨料粒度的1/2。得到的结果表明采用碳化硼磨料研磨有利于获得低亚表面损伤的蓝宝石晶片,而采用由大到小的磨料逐次研磨可以快速获得低亚表面损伤的蓝宝石晶片。
The formation mechanism of subsurface damage of sapphire materials was introduced.In consideration of the boron carbide abrasives with advantage of smaller subsurface damage,the subsurface damage of a sapphire crystal after lapping by boron carbide abrasives with different particle sizes was studied based on the loose abrasive lapping method.The lapped sapphire wafer was etched by KOH chemical corrosion processing technology,the subsurface damage morphology of the sapphire crystal was indirectly reflected by specific etch pitimage and the subsurface damage depths were achieved with gritparticle sizes W20,W10 and W5 by loose boron carbide abrasive lapping.The sub-surface damage morphology,surface roughness and etching rate of the sapphire crystal at different etching time were obtained also.The results show that the subsurface damage density of sapphire crystal lapped by loose boron carbide abrasive is remarkable,but the damage depth is lower,and it increases with of the abrasive sizes.After lapping by looseboron carbide abrasives with gritparticle sizes of W20,W10 and W5,the depths of subsurface damage are 7.4,4.1 and 2.9μm,respectively,which is about 1/2 of the size of abrasive.It indicates that the lapping method with boron carbide abrasives is beneficial to the reduction of subsurface damage of the sapphire.In addition,the sapphire wafer with low subsurface damage can be achieved quickly by lapping methods with abrasive particle sizes from larger to smaller.
The formation mechanism of subsurface damage of sapphire materials was introduced.In consideration of the boron carbide abrasives with advantage of smaller subsurface damage,the subsurface damage of a sapphire crystal after lapping by boron carbide abrasives with different particle sizes was studied based on the loose abrasive lapping method.The lapped sapphire wafer was etched by KOH chemical corrosion processing technology,the subsurface damage morphology of the sapphire crystal was indirectly reflected by specific etch pitimage and the subsurface damage depths were achieved with gritparticle sizes W20,W10 and W5 by loose boron carbide abrasive lapping.The sub-surface damage morphology,surface roughness and etching rate of the sapphire crystal at different etching time were obtained also.The results show that the subsurface damage density of sapphire crystal lapped by loose boron carbide abrasive is remarkable,but the damage depth is lower,and it increases with of the abrasive sizes.After lapping by looseboron carbide abrasives with gritparticle sizes of W20,W10 and W5,the depths of subsurface damage are 7.4,4.1 and 2.9μm,respectively,which is about 1/2 of the size of abrasive.It indicates that the lapping method with boron carbide abrasives is beneficial to the reduction of subsurface damage of the sapphire.In addition,the sapphire wafer with low subsurface damage can be achieved quickly by lapping methods with abrasive particle sizes from larger to smaller.
引文
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[6]刘道标,徐晓明,周海,等.蓝宝石衬底双面研磨亚表面损伤分布研究[J].中国机械工程,2014,25(19):2568-2572.LIU D B,XU X M,ZHOU H,et al..Study on distribution of subsurface damage on sapphire substrate after two-sided lapping[J].China Mechanical Engineering,2014,25(19):2568-2572.(in Chinese)
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[8]SURATWALA T,WONG L,MILLER P,et al..Sub-surface mechanical damage distributions during grinding of fused silica[J].Journal of Non-Crystalline Solids,2006,352(52-54):5601-5617.
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[10]王卓,吴宇列,戴一帆,等.光学材料研磨亚表面损伤的快速检测及其影响规律[J].光学精密工程,2008,16(1):16-21.WANG ZH,WU Y L,DAI Y F,et al..Rapid detection of subsurface damage of optical materials in lapping process and its influence regularity[J].Optics and Precision Engineering,2008,16(1):16-21.(in Chinese)
[11]LV D X,WANG H X,ZHANG W W,et al..Subsurface damage depth and distribution in rotary ultrasonic machining and conventional grinding of glass BK7[J].The International Journal of Advanced Manufacturing Technology,2016,86(9-12):2361-2371.
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[13]KUMAR P,LEE J,LEE G,et al..Low temperature wet etching to reveal sub-surface damage in sapphire substrates[J].Applied Surface Science,2013,273:58-61.
[14]王建彬,朱永伟,王加顺,等.研磨方式对单晶蓝宝石亚表面损伤层深度的影响[J].人工晶体学报,2014,43(5):1099-1104,1120.WANG J B,ZHU Y W,WANG J SH,et al..Effect of lapping methods on subsurface damage depth of single crystal sapphire[J].Journal of Synthetic Crystal,2014,43(5):1099-1104,1120.(in Chinese)
[15]徐晓明,刘道标,周海,等.蓝宝石衬底双面研磨亚表面损伤双片式角度抛光法检测[J].现代制造工程,2014(5):118-123.XU X M,LIU D B,ZHOU H,et al..Doublesubstrate angle polishing to detect the damage on sapphire substrate body after double-grinding[J].Modern Manufacturing Engineering,2014(5):118-123.(in Chinese)
[16]张志斌.蓝宝石衬底片双面研磨加工的面形精度及损伤控制的研究[D].泉州:华侨大学,2016.ZHANG ZH B.Research on the Surface Shape Accuracy and Damage Control of Sapphire Wafer During Double-side Lapping[D].Quanzhou:Huaqiao University,2016.(in Chinese)
[17]张瑜.蓝宝石高效低损伤加工工艺研究[D].大连:大连理工大学,2015.ZHANG Y.Research on High-efficiency and Lowdamage Processing of Sapphire[D].Dalian:Dalian University of Technology,2015.(in Chinese)
[18]CHANG Y P,HASHIMURA M,DORNFELD D A.An investigation of material removal mechanisms in lapping with grain size transition[J].Journal of Biomolecular Screening,2000,122(3):413-419.
[19]LAMBROPOULOS J C,JACOBS S D,RUCKMAN J.Material removal mechanisms from grinding to polishing[J].Ceramic Transactions,1999,102:113-128.
[20]BLACK D R,POLVANI R S,BRAUN L M,et al..Detection of subsurface damage:studies in sapphire[J].SPIE,1997,3060:102-114.
[21]RANDI J A,LAMBROPOULOS J C,JACOBS S D.Subsurface damage in some single crystalline optical materials[J].Applied Optics,2005,44(12):2241-2249.
[22]徐乐,郭剑,余丙军,等.一种快速检测单晶硅亚表面损伤层厚度的方法[J].机械工程学报,2016,52(11):108-114.XU L,GUO J,YU B J,et al..Rapid detection on the thickness of sub-surface damage layer of silicon[J].Journal of Mechanical Engineering,2016,52(11):108-114.(in Chinese)
[23]马彬,沈正祥,张众,等.低亚表面损伤石英光学基底的加工和检测技术[J].强激光与粒子束,2010,22(9):2181-2185.MA B,SHEN ZH X,ZHANG ZH,et al..Fabrication and detection technique of fused silica substrate with extremely low subsurface damage[J].High Power Laser and Particle Beams,2010,22(9):2181-2185.(in Chinese)
[24]NEAUPORT J,AMBARD C,CORMONT P,et al..Subsurface damage measurement of ground fused silica parts by HF etching techniques[J].Optics Express,2009,17(22):20448-20456.
[25]吕海涛,张维连,左燕,等.化学腐蚀法研究蓝宝石单晶中的位错缺陷[J].半导体技术,2004,29(4):48-51.LH T,ZHANG W L,ZUO Y,et al..Study on the dislocation of the sapphire crystal with chemical etching[J].Semiconductor Technology,2004,29(4):48-51.(in Chinese)
[26]吴小凤.导模法生长蓝宝石晶体工艺及性能研究[D].南京:南京航空航天大学,2015.WU X F.Technics and Performances of Sapphire Crystals Grown by Edge-defined Film-fed Growth(EFG)Method[D].Nanjing:Nanjing University of Aeronautics and Astronautics,2015.(in Chinese)
[27]SAMPURNO Y,SUDARGHO F,ZHUANG Y,et al..Effect of cerium oxide particle sizes in oxide chemical mechanical planarization[J].Electrochemical and Solid-State Letters,2009,12(6):H191-H194.
[28]朱永伟,李信路,王占奎,等.光学硬脆材料固结磨料研磨中的亚表面损伤预测[J].光学精密工程,2017,25(2):367-374.ZHU Y W,LI X L,WANG ZH K,et al..Subsurface damage prediction for optical hard-brittle material in fixed abrasive lapping[J].Opt.Precision Eng.,2017,25(2):367-374.(in Chinese)
[2]吴健.蓝宝石CMP加工机理与工艺技术的研究[D].杭州:浙江工业大学,2012.WU J.The Research on CMP Machining Mechanism and Technology for Sapphire Wafer[D].Hangzhou:Zhejiang University of Technology,2012.(in Chinese)
[3]文东辉,洪滔,张克华,等.蓝宝石晶体的双面研磨加工[J].光学精密工程,2009,17(10):2493-2498.WEN D H,HONG T,ZHANG K H,et al..Dual-lapping process for sapphire crystal[J].Opt.Precision Eng.,2009,17(10):2493-2498.(in Chinese)
[4]孟庆平.蓝宝石高效超精密磨削技术及损伤检测研究[D].大连:大连理工大学,2009.MENG Q P.Study on High Efficiency and Ultra-precision Grinding Process and Machining Damage of Sapphire[D].Dalian:Dalian University of Technology,2009.(in Chinese)
[5]HADER B,WEIS O.Superpolishing sapphire:a method to produce atomically flat and damage free surfaces[J].Surface Science,1989,220(1):118-130.
[6]刘道标,徐晓明,周海,等.蓝宝石衬底双面研磨亚表面损伤分布研究[J].中国机械工程,2014,25(19):2568-2572.LIU D B,XU X M,ZHOU H,et al..Study on distribution of subsurface damage on sapphire substrate after two-sided lapping[J].China Mechanical Engineering,2014,25(19):2568-2572.(in Chinese)
[7]YOUNG H T,LIAO H T,HUANG H Y.Surface integrity of silicon wafers in ultra precision machining[J].The International Journal of Advanced Manufacturing Technology,2006,29(3-4):372-378.
[8]SURATWALA T,WONG L,MILLER P,et al..Sub-surface mechanical damage distributions during grinding of fused silica[J].Journal of Non-Crystalline Solids,2006,352(52-54):5601-5617.
[9]LI J,GAO P,ZHU Y W,et al..Research on subsurface damage after abrasives and fixed-abrasive lapping of K9glass[J].Key Engineering Materials,2011,487:253-256.
[10]王卓,吴宇列,戴一帆,等.光学材料研磨亚表面损伤的快速检测及其影响规律[J].光学精密工程,2008,16(1):16-21.WANG ZH,WU Y L,DAI Y F,et al..Rapid detection of subsurface damage of optical materials in lapping process and its influence regularity[J].Optics and Precision Engineering,2008,16(1):16-21.(in Chinese)
[11]LV D X,WANG H X,ZHANG W W,et al..Subsurface damage depth and distribution in rotary ultrasonic machining and conventional grinding of glass BK7[J].The International Journal of Advanced Manufacturing Technology,2016,86(9-12):2361-2371.
[12]尹中伟.蓝宝石单晶体裂纹振动扩展机理研究[D].哈尔滨:哈尔滨工业大学,2014.YIN ZH W.Research on Mechanism of Crack Propagation of Sapphire Single Crystal under Vibration Conditions[D].Harbin:Harbin Institute of Technology,2014.(in Chinese)
[13]KUMAR P,LEE J,LEE G,et al..Low temperature wet etching to reveal sub-surface damage in sapphire substrates[J].Applied Surface Science,2013,273:58-61.
[14]王建彬,朱永伟,王加顺,等.研磨方式对单晶蓝宝石亚表面损伤层深度的影响[J].人工晶体学报,2014,43(5):1099-1104,1120.WANG J B,ZHU Y W,WANG J SH,et al..Effect of lapping methods on subsurface damage depth of single crystal sapphire[J].Journal of Synthetic Crystal,2014,43(5):1099-1104,1120.(in Chinese)
[15]徐晓明,刘道标,周海,等.蓝宝石衬底双面研磨亚表面损伤双片式角度抛光法检测[J].现代制造工程,2014(5):118-123.XU X M,LIU D B,ZHOU H,et al..Doublesubstrate angle polishing to detect the damage on sapphire substrate body after double-grinding[J].Modern Manufacturing Engineering,2014(5):118-123.(in Chinese)
[16]张志斌.蓝宝石衬底片双面研磨加工的面形精度及损伤控制的研究[D].泉州:华侨大学,2016.ZHANG ZH B.Research on the Surface Shape Accuracy and Damage Control of Sapphire Wafer During Double-side Lapping[D].Quanzhou:Huaqiao University,2016.(in Chinese)
[17]张瑜.蓝宝石高效低损伤加工工艺研究[D].大连:大连理工大学,2015.ZHANG Y.Research on High-efficiency and Lowdamage Processing of Sapphire[D].Dalian:Dalian University of Technology,2015.(in Chinese)
[18]CHANG Y P,HASHIMURA M,DORNFELD D A.An investigation of material removal mechanisms in lapping with grain size transition[J].Journal of Biomolecular Screening,2000,122(3):413-419.
[19]LAMBROPOULOS J C,JACOBS S D,RUCKMAN J.Material removal mechanisms from grinding to polishing[J].Ceramic Transactions,1999,102:113-128.
[20]BLACK D R,POLVANI R S,BRAUN L M,et al..Detection of subsurface damage:studies in sapphire[J].SPIE,1997,3060:102-114.
[21]RANDI J A,LAMBROPOULOS J C,JACOBS S D.Subsurface damage in some single crystalline optical materials[J].Applied Optics,2005,44(12):2241-2249.
[22]徐乐,郭剑,余丙军,等.一种快速检测单晶硅亚表面损伤层厚度的方法[J].机械工程学报,2016,52(11):108-114.XU L,GUO J,YU B J,et al..Rapid detection on the thickness of sub-surface damage layer of silicon[J].Journal of Mechanical Engineering,2016,52(11):108-114.(in Chinese)
[23]马彬,沈正祥,张众,等.低亚表面损伤石英光学基底的加工和检测技术[J].强激光与粒子束,2010,22(9):2181-2185.MA B,SHEN ZH X,ZHANG ZH,et al..Fabrication and detection technique of fused silica substrate with extremely low subsurface damage[J].High Power Laser and Particle Beams,2010,22(9):2181-2185.(in Chinese)
[24]NEAUPORT J,AMBARD C,CORMONT P,et al..Subsurface damage measurement of ground fused silica parts by HF etching techniques[J].Optics Express,2009,17(22):20448-20456.
[25]吕海涛,张维连,左燕,等.化学腐蚀法研究蓝宝石单晶中的位错缺陷[J].半导体技术,2004,29(4):48-51.LH T,ZHANG W L,ZUO Y,et al..Study on the dislocation of the sapphire crystal with chemical etching[J].Semiconductor Technology,2004,29(4):48-51.(in Chinese)
[26]吴小凤.导模法生长蓝宝石晶体工艺及性能研究[D].南京:南京航空航天大学,2015.WU X F.Technics and Performances of Sapphire Crystals Grown by Edge-defined Film-fed Growth(EFG)Method[D].Nanjing:Nanjing University of Aeronautics and Astronautics,2015.(in Chinese)
[27]SAMPURNO Y,SUDARGHO F,ZHUANG Y,et al..Effect of cerium oxide particle sizes in oxide chemical mechanical planarization[J].Electrochemical and Solid-State Letters,2009,12(6):H191-H194.
[28]朱永伟,李信路,王占奎,等.光学硬脆材料固结磨料研磨中的亚表面损伤预测[J].光学精密工程,2017,25(2):367-374.ZHU Y W,LI X L,WANG ZH K,et al..Subsurface damage prediction for optical hard-brittle material in fixed abrasive lapping[J].Opt.Precision Eng.,2017,25(2):367-374.(in Chinese)