单晶蓝宝石高效超精密加工技术研究
|
摘要
针对光电子器件、集成电路等应用领域对单晶蓝宝石高质量的表面需求,而单晶蓝宝石自身的硬度和良好的化学稳定性给抛光带来较大的困难。文章在分析、对比直接采用2μm金刚石磨料化学机械抛光蓝宝石基片效果的基础上,提出机械研磨与化学机械抛光相结合的工艺抛光蓝宝石。结果表明,采用10μm的碳化硼磨料机械研磨蓝宝石,材料去除率为8.03μm/h,表面粗糙度Ra由1.18μm迅速降至22.326 nm;采用粒径为2μm和0.5μm的金刚石磨料化学机械抛光蓝宝石晶片,有效的去除机械抛光带来的损伤,最后表面粗糙度Ra可达0.55 nm。此抛光工艺能满足蓝宝石晶体高效、超光滑、低损伤的抛光要求。
Single crystal sapphire surface of high quality is required in the fields of optoelectronic devices,integrated circuits,and so on,Single crystal sapphire substrates require to possess high quality surface finish and integrity to significantly enhance performance and reliability of various microelectronics and LED devices. but its super high mechanical hardness and super strong chemical inertness bring enormous difficult for polishing. In this paper,the effect of chemical mechanical polishing with using 2 μm diamond abrasive was analyzed and compared on sapphire wafer. A method of technology for processing single crystal sapphire was proposed,which integrates mechanical lapping with chemically assisted mechanical polishing. Experimental results showthat the material removal rate( MRR) is 8. 03 μm/h and surface roughness Ra is reduced from 1. 18 μm to 22. 326 nm by lapping with using boron carbide( 10 μm). 2 μm and 0. 5 μm diamond abrasive are used to remove the damage of mechanical polishing. Finally,a surface roughness,Ra = 0. 55 nm,can be achieved by using this machining process. Combination of polishing process can basically satisfy requirements of high efficiency,lowdamage,ultra smooth for polishing sapphire crystal.
Single crystal sapphire surface of high quality is required in the fields of optoelectronic devices,integrated circuits,and so on,Single crystal sapphire substrates require to possess high quality surface finish and integrity to significantly enhance performance and reliability of various microelectronics and LED devices. but its super high mechanical hardness and super strong chemical inertness bring enormous difficult for polishing. In this paper,the effect of chemical mechanical polishing with using 2 μm diamond abrasive was analyzed and compared on sapphire wafer. A method of technology for processing single crystal sapphire was proposed,which integrates mechanical lapping with chemically assisted mechanical polishing. Experimental results showthat the material removal rate( MRR) is 8. 03 μm/h and surface roughness Ra is reduced from 1. 18 μm to 22. 326 nm by lapping with using boron carbide( 10 μm). 2 μm and 0. 5 μm diamond abrasive are used to remove the damage of mechanical polishing. Finally,a surface roughness,Ra = 0. 55 nm,can be achieved by using this machining process. Combination of polishing process can basically satisfy requirements of high efficiency,lowdamage,ultra smooth for polishing sapphire crystal.
引文
[1]范志刚,刘建军,肖昊苏,等.蓝宝石单晶的生长技术及应用研究进展[J].硅酸盐学报,2011,39(5):880-891.
[2]崔林,汪桂根,张化宇,等.用于GaN基发光二极管的蓝宝石图形衬底制备进展[J].无机材料学报,2012,27(9):897-905.
[3]AKSELORD M S,BRUNI F J.Modern trends in crystal growth and new applications of sapphire[J].Journal of Crystal Growth,2012,360:134-145.
[4]PORRAS P,SAIDI H,YEGNESW ARAN V.Security and privacy in mobile information and communication systems[M].Springer Berlin Heidelberg,2010.
[5]马文成,刘立军.蓝宝石晶体吸收系数对晶体内温度及热应力分布的影响[J].硅酸盐学报,2016,44(4):513-516.
[6]WANG G G,ZUO H B,ZHANG H,Y,et al.Preparation,quality characterization,service performance evaluation and its modification of sapphire crystal for optical window and dome application[J].Materials and Design,2010,31(2):706-711.
[7]鱼胜利,吉方,陈东生.一种CMP试验装置的研制[J].组合机床与自动化加工技术,2011(1):105-108.
[8]Zhou S J,LIU S.Study on sappire removal for thin-film LEDs fabrication using CMP and dry etching[J].Applied Surface Science,2009,255(23):9469-9473.
[9]袁文强,魏昕,谢小柱,等.CMP抛光界面温度的在线检测[J].组合机床与自动化加工技术,2016(8):42-45.
[10]熊伟,储向峰,董永平,等.不同磨料对蓝宝石基片化学机械抛光的影响研究[J].人工晶体学报,2013,42(5):1064-1069.
[11]ZHANG Z F,Liu W L,Song Z T,et al.Two-Step Chemical Mechanical Polishing of Sapphire Substrate[J].Journal of the Eletrochemical Society,2010,157(6):H688-H691.
[12]ZHANG Z F,YAN W X,ZHANG L,et al.Effect of mechanical process parameters on friction behavior and material removal during sapphire chemical mechanical polishing[J].Microelectronic Engineering,2011,88(9):3020-3023.
[13]王金普,白林山,储向峰.A向蓝宝石化学机械抛光研究[J].金刚石与磨料磨具工程,2016,36(3):43-49.
[14]Xu,W H,Lu X C,Pan G S,et al.Ultrasonic Flexural Vibration Assisted Chemical Mechanical Polishing For Sapphire Substrate[J].Applied Surface Science,2010,256(12):3936-3940.
[15]李树荣.蓝宝石晶片化学机械抛光液的研制[D].大)15.连:大连理工大学,2008.
[2]崔林,汪桂根,张化宇,等.用于GaN基发光二极管的蓝宝石图形衬底制备进展[J].无机材料学报,2012,27(9):897-905.
[3]AKSELORD M S,BRUNI F J.Modern trends in crystal growth and new applications of sapphire[J].Journal of Crystal Growth,2012,360:134-145.
[4]PORRAS P,SAIDI H,YEGNESW ARAN V.Security and privacy in mobile information and communication systems[M].Springer Berlin Heidelberg,2010.
[5]马文成,刘立军.蓝宝石晶体吸收系数对晶体内温度及热应力分布的影响[J].硅酸盐学报,2016,44(4):513-516.
[6]WANG G G,ZUO H B,ZHANG H,Y,et al.Preparation,quality characterization,service performance evaluation and its modification of sapphire crystal for optical window and dome application[J].Materials and Design,2010,31(2):706-711.
[7]鱼胜利,吉方,陈东生.一种CMP试验装置的研制[J].组合机床与自动化加工技术,2011(1):105-108.
[8]Zhou S J,LIU S.Study on sappire removal for thin-film LEDs fabrication using CMP and dry etching[J].Applied Surface Science,2009,255(23):9469-9473.
[9]袁文强,魏昕,谢小柱,等.CMP抛光界面温度的在线检测[J].组合机床与自动化加工技术,2016(8):42-45.
[10]熊伟,储向峰,董永平,等.不同磨料对蓝宝石基片化学机械抛光的影响研究[J].人工晶体学报,2013,42(5):1064-1069.
[11]ZHANG Z F,Liu W L,Song Z T,et al.Two-Step Chemical Mechanical Polishing of Sapphire Substrate[J].Journal of the Eletrochemical Society,2010,157(6):H688-H691.
[12]ZHANG Z F,YAN W X,ZHANG L,et al.Effect of mechanical process parameters on friction behavior and material removal during sapphire chemical mechanical polishing[J].Microelectronic Engineering,2011,88(9):3020-3023.
[13]王金普,白林山,储向峰.A向蓝宝石化学机械抛光研究[J].金刚石与磨料磨具工程,2016,36(3):43-49.
[14]Xu,W H,Lu X C,Pan G S,et al.Ultrasonic Flexural Vibration Assisted Chemical Mechanical Polishing For Sapphire Substrate[J].Applied Surface Science,2010,256(12):3936-3940.
[15]李树荣.蓝宝石晶片化学机械抛光液的研制[D].大)15.连:大连理工大学,2008.