碳化硼的制备、应用与碳化硼研磨料的回收前景
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摘要
B4C密度小、熔点高、硬度高,化学稳定性好,具有良好的中子吸收能力,广泛应用于核工业、材料、陶瓷等领域。碳化硼制备复杂,属高能耗产业。本文综述了碳化硼的制备方法及其应用。目前蓝宝石研磨废料中约含70%碳化硼,且尚未有效回收处理,如能将该研磨废料中的碳化硼回收,不但可实现碳化硼资源的综合利用,还能够大幅度降低碳化硼磨料以及蓝宝石的加工成本,因而具有广阔的应用前景。
Boron carbide has been widely used in the fields of nuclear industry material, owning to the excellent properties of low density, high melting point, high hardness, good chemical stability and neutron absorption capacity as well. The preparation of boron carbide is complex and belongs to energy-intensive industries.A comprehensive review is given on the properties, preparation, and applications. Sapphire grinding wastes contains about 70% of the boron carbide, and there is no effective method for recycling. If boron carbide in sapphire grinding wastes can be recycled, it will not only achieve comprehensive utilization of boron carbide resources, but also significantly reduce the processing cost of boron carbide abrasive and sapphire. Thus it has broad application prospects.
Boron carbide has been widely used in the fields of nuclear industry material, owning to the excellent properties of low density, high melting point, high hardness, good chemical stability and neutron absorption capacity as well. The preparation of boron carbide is complex and belongs to energy-intensive industries.A comprehensive review is given on the properties, preparation, and applications. Sapphire grinding wastes contains about 70% of the boron carbide, and there is no effective method for recycling. If boron carbide in sapphire grinding wastes can be recycled, it will not only achieve comprehensive utilization of boron carbide resources, but also significantly reduce the processing cost of boron carbide abrasive and sapphire. Thus it has broad application prospects.
引文
[1]Thevenot F.A review on boron carbide[J].Key Engineer in Materials,1991,56(57):59-88.
[2]唐国宏,张兴华,陈昌麒.碳化硼超硬材料综述[J].材料导报,1994,04:69-72.
[3]王正军.碳化硼抗弹陶瓷研究进展[J].硅酸盐通报,2008,01:132-135.
[4]吴高建,刘胜利,徐锡斌,等.探索新型高温超导材料碳化硼的研究[J].低温物理学报,2003,51:269-271.
[5]章晓波,刘宁.碳化硼材料的性能、制备与应用[J].硬质合金,2006,02:120-125.
[6]范志刚,刘建军,肖昊苏,等.蓝宝石单晶的生长技术及应用研究进展[J].硅酸盐学报,2011,05:880-891.
[7]王如刚,陈振强,胡国永.几种LED衬底材料的特征对比与研究现状[J].科学技术与工程,2006,02:121-126.
[8]Hader B.Superpolishing of Sapphire:a Methodto Produce Atomically Flat and Damage Free Surfaces[J].SurfaceScience,1989,220(1):118-130.
[9]Keller S,KellerE,et al.Influence of Sapphire Nitridation on Properties of Gallium Nitride Grown by Met Alorganic Chemical Vapor Deposition[J].Appl.Phys.Lette.,1996,68(11):15-25.
[10]吴芳,吕军.碳化硼陶瓷的制备及应用[J].五邑大学学报(自然科学版),2002,01:45-49.
[11]陈晓光,郭大为,孙洪亮.一种蓝宝石用研磨废浆中的碳化硼回收利用的方法[P].山东:CN103072988A,2013-05-01.
[12]裴立宅,肖汉宁,祝宝军,等.碳化硼粉末及其复相陶瓷的研究现状与进展[J].稀有金属与硬质合金,2004,04:46-50.
[13]Logan K V,et al.Combustion synthesis of gap,InP and(Ga,In)P under a microgravity environment[J].C eram Eng Sci Proc,1994,5:7-12.
[14]张化宇,韩杰才,赫晓东,等.自蔓延高温合成MgO-B_4C微观组织研究[J].宇航材料工艺,2000,02:25-28.
[15]张廷安,豆志河,杨欢,等.镁热自蔓延法制备B_4C微粉[J].东北大学学报,2003,10:935-938.
[16]魏德军,蔺雷亭,李萍.不同冶炼工艺生产的碳化硼粉末对其陶瓷性能的影响[J].金刚石与磨料磨具工程,2004,05:51-58.
[17]贾宝瑞,秦明礼,李慧,等.碳化硼粉末制备方法的研究进展[J].材料导报,2010,09:32-34+38.
[18]蔺雷亭,张继红.碳化硼陶瓷专用粉末的制备[J].中国粉体技术,2000,S1:122-123.
[19]李蓓,简敏,王美玲,等.碳化硼粉末的制备方法[J].核动力工程,2012,S2:110-113+119.
[20]Deshpande S V,Gulari E,Harris S J,et al.Filement Activated Chemical Vapor Deposition of Boron Carbide Coating[J].Appl Phys Lett,1994,65(14):1757-1759.
[21]Oya ma T,et al.Gas-phase synthesis of crystalline B4C encapsulated in gr aphitic particles by pulsed-laser irradiation[J].Carbon.1999.37:433-436.
[22]傅博,李盛荣,王永兰.碳化硼合成及其烧结体密度[J].原子能科学技术,1997,05:17-24.
[23]尹邦跃,王零森,等.B_4C超细粉末的制备及烧结[J].无机材料学报,2002,02:343-347.
[24]Shampa Mondal,et al.Low-temperature synthetic route for boron carbide[J].J ournal of the European Ceramic Society,2005,5:287-291.
[25]Sinha A,et al.Car bonthermal route for preparation of boron carbide powder from boric a cid-citric acid gel precursor[J].Journal of Nuclear Materials,2002,301:165.
[26]Shi Liang,Gu Yunle,Chen Luyang,et al.A Low Tem-perature Synthesis of Crystalline B_4C Ultrafine Powders[J].Solid State Commun,2003,128:5-7.
[27]Gu Yunle,Chen Luyang,Qian Y itai.Synthesis of Nanocrystalline Boron Carbide via a Solvothermal Reduction of CC_(14)in the Presence of Amorphous Boron Powder[J].J Am Ceram Soc,2005,88(1):225-227.
[28]汤华国,马贤峰,赵伟,等.碳化硼粉末的制备方法[P].吉林:CN1408639,2003-04-09.
[29]王日中,胡毅,唐可超.核反应堆用碳化硼材料研究进展[A].中国核学会.中国核科学技术进展报告(第二卷)—中国核学会2011年学术年会论文集第4册(核材料分卷、同位素分离分卷、核化学与放射化学分卷)[C].中国核学会:2011:4.
[30]曹仲文,张继红.核工业用碳化硼材料产业化前景分析[J].新材料产业,2006,05:59-61.
[31]徐正彬,贾梦秋.碳化硼的改性及其在有机硅树脂中的应用[J].北京化工大学学报(自然科学版),2007,S2:52-56.
[32]堂山昌男,山本良一.尖端陶瓷[M].北京:电子工业出版社,1987.
[33]彭倩,邱绍宇,武兵书,等.碳化硼涂层材料研究进展[J].金属热处理,2005,10:7-13.
[34]徐润泽.粉末冶金结构材料[M].长沙:中南工业大学出版社,1999.
[35]张治民,刘华佾.B_4C在铁基摩擦材料中的作用及机理[J].中南工业大学学报,1997,04:359-362.
[36]陈晓光,郭大为,孙洪亮.一种蓝宝石用拋光废浆中的碳化硼回收利用的方法[P].山东:CN103072989A,2013-05-01.
[2]唐国宏,张兴华,陈昌麒.碳化硼超硬材料综述[J].材料导报,1994,04:69-72.
[3]王正军.碳化硼抗弹陶瓷研究进展[J].硅酸盐通报,2008,01:132-135.
[4]吴高建,刘胜利,徐锡斌,等.探索新型高温超导材料碳化硼的研究[J].低温物理学报,2003,51:269-271.
[5]章晓波,刘宁.碳化硼材料的性能、制备与应用[J].硬质合金,2006,02:120-125.
[6]范志刚,刘建军,肖昊苏,等.蓝宝石单晶的生长技术及应用研究进展[J].硅酸盐学报,2011,05:880-891.
[7]王如刚,陈振强,胡国永.几种LED衬底材料的特征对比与研究现状[J].科学技术与工程,2006,02:121-126.
[8]Hader B.Superpolishing of Sapphire:a Methodto Produce Atomically Flat and Damage Free Surfaces[J].SurfaceScience,1989,220(1):118-130.
[9]Keller S,KellerE,et al.Influence of Sapphire Nitridation on Properties of Gallium Nitride Grown by Met Alorganic Chemical Vapor Deposition[J].Appl.Phys.Lette.,1996,68(11):15-25.
[10]吴芳,吕军.碳化硼陶瓷的制备及应用[J].五邑大学学报(自然科学版),2002,01:45-49.
[11]陈晓光,郭大为,孙洪亮.一种蓝宝石用研磨废浆中的碳化硼回收利用的方法[P].山东:CN103072988A,2013-05-01.
[12]裴立宅,肖汉宁,祝宝军,等.碳化硼粉末及其复相陶瓷的研究现状与进展[J].稀有金属与硬质合金,2004,04:46-50.
[13]Logan K V,et al.Combustion synthesis of gap,InP and(Ga,In)P under a microgravity environment[J].C eram Eng Sci Proc,1994,5:7-12.
[14]张化宇,韩杰才,赫晓东,等.自蔓延高温合成MgO-B_4C微观组织研究[J].宇航材料工艺,2000,02:25-28.
[15]张廷安,豆志河,杨欢,等.镁热自蔓延法制备B_4C微粉[J].东北大学学报,2003,10:935-938.
[16]魏德军,蔺雷亭,李萍.不同冶炼工艺生产的碳化硼粉末对其陶瓷性能的影响[J].金刚石与磨料磨具工程,2004,05:51-58.
[17]贾宝瑞,秦明礼,李慧,等.碳化硼粉末制备方法的研究进展[J].材料导报,2010,09:32-34+38.
[18]蔺雷亭,张继红.碳化硼陶瓷专用粉末的制备[J].中国粉体技术,2000,S1:122-123.
[19]李蓓,简敏,王美玲,等.碳化硼粉末的制备方法[J].核动力工程,2012,S2:110-113+119.
[20]Deshpande S V,Gulari E,Harris S J,et al.Filement Activated Chemical Vapor Deposition of Boron Carbide Coating[J].Appl Phys Lett,1994,65(14):1757-1759.
[21]Oya ma T,et al.Gas-phase synthesis of crystalline B4C encapsulated in gr aphitic particles by pulsed-laser irradiation[J].Carbon.1999.37:433-436.
[22]傅博,李盛荣,王永兰.碳化硼合成及其烧结体密度[J].原子能科学技术,1997,05:17-24.
[23]尹邦跃,王零森,等.B_4C超细粉末的制备及烧结[J].无机材料学报,2002,02:343-347.
[24]Shampa Mondal,et al.Low-temperature synthetic route for boron carbide[J].J ournal of the European Ceramic Society,2005,5:287-291.
[25]Sinha A,et al.Car bonthermal route for preparation of boron carbide powder from boric a cid-citric acid gel precursor[J].Journal of Nuclear Materials,2002,301:165.
[26]Shi Liang,Gu Yunle,Chen Luyang,et al.A Low Tem-perature Synthesis of Crystalline B_4C Ultrafine Powders[J].Solid State Commun,2003,128:5-7.
[27]Gu Yunle,Chen Luyang,Qian Y itai.Synthesis of Nanocrystalline Boron Carbide via a Solvothermal Reduction of CC_(14)in the Presence of Amorphous Boron Powder[J].J Am Ceram Soc,2005,88(1):225-227.
[28]汤华国,马贤峰,赵伟,等.碳化硼粉末的制备方法[P].吉林:CN1408639,2003-04-09.
[29]王日中,胡毅,唐可超.核反应堆用碳化硼材料研究进展[A].中国核学会.中国核科学技术进展报告(第二卷)—中国核学会2011年学术年会论文集第4册(核材料分卷、同位素分离分卷、核化学与放射化学分卷)[C].中国核学会:2011:4.
[30]曹仲文,张继红.核工业用碳化硼材料产业化前景分析[J].新材料产业,2006,05:59-61.
[31]徐正彬,贾梦秋.碳化硼的改性及其在有机硅树脂中的应用[J].北京化工大学学报(自然科学版),2007,S2:52-56.
[32]堂山昌男,山本良一.尖端陶瓷[M].北京:电子工业出版社,1987.
[33]彭倩,邱绍宇,武兵书,等.碳化硼涂层材料研究进展[J].金属热处理,2005,10:7-13.
[34]徐润泽.粉末冶金结构材料[M].长沙:中南工业大学出版社,1999.
[35]张治民,刘华佾.B_4C在铁基摩擦材料中的作用及机理[J].中南工业大学学报,1997,04:359-362.
[36]陈晓光,郭大为,孙洪亮.一种蓝宝石用拋光废浆中的碳化硼回收利用的方法[P].山东:CN103072989A,2013-05-01.