摘要
采用高温固相法成功制备了Sr_2Si_5N_(8-δ)C_x:Eu~(2+)碳氮化物荧光粉,并研究了Si-C替代Si-N对晶体结构和发光性能的影响。XRD结果表明,部分Si-C替代Si-N并未改变荧光粉的晶体结构,C4-替代N3-最大掺杂量不超过x=1.2。荧光光谱结果表明,荧光粉的激发和发射光谱并未随着x值增加而发生偏移,意味着Si-C替代Si-N对Eu2+周围晶体场环境影响较小;当x=0.3时,荧光粉的发光强度达到最大,随着x值进一步增大,样品结晶性变差,导致其发光强度降低。荧光粉热猝灭性能结果表明,适量的Si-C替代Si-N能够提升样品的热猝灭性能;热猝灭性能提升机制主要采用离子半径错配模型进行解释。
Sr_2Si_5N_(8-δ)C_x:Eu~(2+) carbonitride phosphors were synthesized by the high temperature solid-state reaction.The influence of Si-C substituting Si-N bond on the crystal structure and the luminescence properties were investigated.XRD results showed that the crystal structure is not changed when partial Si-C replacing Si-N bond.The maximum doping amount for C~(4-)substitution of N~(3-) ions is not more than x=1.2.Photoluminescence(PL) spectra showed that the excitation and emission spectra do not shift with increasing x values,indicating that the substitution of Si-N for Si-C has little influence on the crystal field around Eu~(2+).When x=0.3,the PL intensity reaches the maximum value.As increasing x values,the PL intensity decreases due to the worse crystalline.The results of thermal quenching properties showed that moderate Si-C replacing Si-N bond could enhance the thermal quenching properties.The enhancement mechanism of the thermal quenching properties is proposed based on the Size-Mismatch model.
引文
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