三维互穿网络结构MoSi_2-RSiC复合材料导电行为的影响因素研究
|
摘要
本文以再结晶碳化硅(RSiC)为基体,分别采用直接熔渗(MI)和前驱体浸渍裂解(PIP)-直接熔渗法(MI)来制备了MoSi_2-RSiC复合材料,探究了熔渗温度、基体密度和制备工艺对复合材料组成、微观结构和导电性能的影响。进而引入半定量计算和改进型混合规则探讨了复合材料导电行为的影响因素。结果表明:不同方法制备的MoSi_2-RSiC复合材料均为三维互穿网络结构,且PIP-MI法所制备的复合材料中,基体RSiC与MoSi_2界面结合性良好;两种复合材料的体积电阻率都随基体密度的降低和熔渗温度的升高而降低,MS-2.30-2050的体积电阻率为9.67×10~(-3)Ω·cm,为对应基体的1/1180。互穿网络结构对复合材料导电行为的影响较大,当基体密度为2.62 g/cm~3,I1为0.64;界面结合性对复合材料导电行为的影响主要受界面层厚度以及熔渗相体积分数的共同影响,其影响因子先增加后降低。复合材料中三维互穿网络结构对体积电阻率的影响高于界面结合性。
In this paper, the MoSi_2-RSiC composites were prepared via direct melt infiltration(MI) and precursor infiltration pyrolysis(PIP)-direct melt infiltration(MI), where recrystallized silicon carbide(RSiC) works as matrix. Effects of infiltration temperature, matrix density and preparation process on the composition, microstructure and electrical conductivity of the composites were investigated.Furthermore, semi quantitative calculation and modified mixing rule were introduced to explore the influencing factors of conductive behavior of composites. Results show that MoSi_2-RSiC composites fabricated via these two methods both possess three-dimensional interpenetrating network structures, and composites obtained via PIP-MI method owns excellent interfacial combination. The volume resistivity of the composites decreasesd with the decreasing of the matrix density and the increasing of the infiltration temperature, the volume resistivity of MS-2.30-2050 was 9.67×10~(-3) Ω·cm, which was 1/1180 of the corresponding matrix. The interpenetrating network structure has remarkable influence on the conductive behavior of the composites. When the density of the matrix is 2.62 g/cm~3, I1 is 0.64. The effect of the interface bonding on the conductive behavior of the composites is mainly affected by the thickness of the interface layer and the volume fraction of the infiltrated phase. With the density of the matrix increasing, the interface bonding factors increase first and then decrease. The effect of the interpenetrating network structure on the conductivity was stronger than the interfacial performance.
In this paper, the MoSi_2-RSiC composites were prepared via direct melt infiltration(MI) and precursor infiltration pyrolysis(PIP)-direct melt infiltration(MI), where recrystallized silicon carbide(RSiC) works as matrix. Effects of infiltration temperature, matrix density and preparation process on the composition, microstructure and electrical conductivity of the composites were investigated.Furthermore, semi quantitative calculation and modified mixing rule were introduced to explore the influencing factors of conductive behavior of composites. Results show that MoSi_2-RSiC composites fabricated via these two methods both possess three-dimensional interpenetrating network structures, and composites obtained via PIP-MI method owns excellent interfacial combination. The volume resistivity of the composites decreasesd with the decreasing of the matrix density and the increasing of the infiltration temperature, the volume resistivity of MS-2.30-2050 was 9.67×10~(-3) Ω·cm, which was 1/1180 of the corresponding matrix. The interpenetrating network structure has remarkable influence on the conductive behavior of the composites. When the density of the matrix is 2.62 g/cm~3, I1 is 0.64. The effect of the interface bonding on the conductive behavior of the composites is mainly affected by the thickness of the interface layer and the volume fraction of the infiltrated phase. With the density of the matrix increasing, the interface bonding factors increase first and then decrease. The effect of the interpenetrating network structure on the conductivity was stronger than the interfacial performance.
引文
[1]GAO P Z,XU MY,YUAN Z,et al.Temperature dependence of the mechanic and thermal expansion behaviors of MoSi2-RSiCcomposites with a three-dimensionally(3D)interpenetrated network structure[J].Journal of Alloys and Compounds,2018,731:1103-1111
[2]GAO P Z,WANG L,HUANG S T,et al.Microstructure and mechanical properties of 3-D interpenetrated network structure MoSi2-RSiC composite[J].Ceramic International,2012,38:5799-5805.
[3]GAO P Z,ZHANG X L,HUANG S T,et al.Influence of MoSi2content on the microstructure and properties of MoSi2-RSiCcomposites[J].Materials Research Bulletin,2014,54:13-19.
[4]江莞,赵世柯,王刚.二硅化相材料的研究现状及应用前景[J].无机材料学报,2001,16(4):577-585.JANG W,ZHAO S K,WANG G.Journal of Inorganic Materials,2001,16(4):577-585.
[5]林晶,肖汉宁,高朋召,等.三维互穿网络结构Al/RSiC复合材料的制备及性能[J].机械工程,2016,40(10):38-41.LIN J,XIAO H N,GAO P Z,et al.Chinese Journal of Mechanical Engineering,2016,40(10):38-41.
[6]HILLERSTROM A,KRONBERG B.A two-step method for the synthesis of a hydrophilic PDMS interpenetrating polymer network[J].Journal of Applied Polymer Science,2008,110(5):3059-3067.
[7]LI S,XIONG D,LIU M,et al.Thermophysical properties of SiC/Al composites with three dimensional interpenetrating network structure[J].Ceramics International,2014,40(5):7539-7544.
[8]GAO P Z,WANG L,HUANG S T,et al.Microstructure and mechanical properties of 3-D interpenetrated network structure MoSi2-RSiC composite[J].Ceramic International,2012,38:5799-5805.
[9]黄继武.多晶材料X射线衍射[M].冶金工业出版社,2012.
[10]宁青菊,谈国强,史永胜.无机材料物理性能[M].化学工业出版社,2009.
[11]LV H N,ZHANG X L,GAO P Z.Influence of density on the microstructure,mechanical,electrical and thermal properties of recrystallized silicon carbide[J].Key Engineering Materials,680(1662-9795):93-98.
[12]SUYAMA S,KAMEDA T,ITOH Y.Development of highstrength reaction-sintered silicon carbide[J].Diamond and Related Materials,2003,12:1201-1204.
[13]张小亮.基体密度对MoSi2-RSiC复合材料组成、微观结构和性能的影响[D].长沙,湖南大学硕士学位论文,2015.
[14]谢文.三维网络结构MoSi2/RSiC复合材料微观结构调控及性能研究[D].长沙,湖南大学博士学位论文,2016.
[15]刘伯威,潘进,杨德明,等.碳对二硅化钼复合材料性能的影响[J].粉末冶金材料科学与工程,2000,(4):295-300.LIU B W,PAN J,YANG D M,et al.Materials Science and Engineering of Powder Metallurgy,2000,(4):295-300.
[16]BERZTISS D A,CERCHIARA R R,GULBRANSEN E A,et al.Oxidation of MoSi2 and comparison with other silicide materials[J].Materials Science&Engineering A,1992,155(1-2):165-181.
[17]KUMAR S,SAIRAM K,SONBER J K,et al.Hot-pressing of MoSi2 reinforced B4C composites[J].Ceramics International,2014,40:16099-16105.
[18]高朋召,张小亮,黄诗婷,等.熔渗温度对MoSi2(Cr5Si3)-RSiC复合材料显微结构和性能的影响[J].硅酸盐学报,2014,42(9):1105-1110.GAO P Z,ZHANG X L,HUANG S T,et al.Journal of the Chinese Ceramic Society,2014,42(9):1105-1110.
[19]SHUR M,RUMYANTSEV S.碳化硅半导体材料与器件[M].电子工业出版社,2012.
[20]YAO Z,STIGLICH J,SUDARSHAN T S.Molybdenum silicide based materials and their properties[J].J Mater Eng Perform,1999,8:291-304.
[21]吕华南,高朋召,徐墨雨,等.高温氧化时间对MoSi2-RSiC复合材料组成、微观结构和性能的影响[J].湖南大学学报(自然科学版),2017,44(6):45-51.LV H N,GAP P Z,XU M Y,et al.Journal of Hunan University(Natural Sciences),2017,44(6):45-51.
[2]GAO P Z,WANG L,HUANG S T,et al.Microstructure and mechanical properties of 3-D interpenetrated network structure MoSi2-RSiC composite[J].Ceramic International,2012,38:5799-5805.
[3]GAO P Z,ZHANG X L,HUANG S T,et al.Influence of MoSi2content on the microstructure and properties of MoSi2-RSiCcomposites[J].Materials Research Bulletin,2014,54:13-19.
[4]江莞,赵世柯,王刚.二硅化相材料的研究现状及应用前景[J].无机材料学报,2001,16(4):577-585.JANG W,ZHAO S K,WANG G.Journal of Inorganic Materials,2001,16(4):577-585.
[5]林晶,肖汉宁,高朋召,等.三维互穿网络结构Al/RSiC复合材料的制备及性能[J].机械工程,2016,40(10):38-41.LIN J,XIAO H N,GAO P Z,et al.Chinese Journal of Mechanical Engineering,2016,40(10):38-41.
[6]HILLERSTROM A,KRONBERG B.A two-step method for the synthesis of a hydrophilic PDMS interpenetrating polymer network[J].Journal of Applied Polymer Science,2008,110(5):3059-3067.
[7]LI S,XIONG D,LIU M,et al.Thermophysical properties of SiC/Al composites with three dimensional interpenetrating network structure[J].Ceramics International,2014,40(5):7539-7544.
[8]GAO P Z,WANG L,HUANG S T,et al.Microstructure and mechanical properties of 3-D interpenetrated network structure MoSi2-RSiC composite[J].Ceramic International,2012,38:5799-5805.
[9]黄继武.多晶材料X射线衍射[M].冶金工业出版社,2012.
[10]宁青菊,谈国强,史永胜.无机材料物理性能[M].化学工业出版社,2009.
[11]LV H N,ZHANG X L,GAO P Z.Influence of density on the microstructure,mechanical,electrical and thermal properties of recrystallized silicon carbide[J].Key Engineering Materials,680(1662-9795):93-98.
[12]SUYAMA S,KAMEDA T,ITOH Y.Development of highstrength reaction-sintered silicon carbide[J].Diamond and Related Materials,2003,12:1201-1204.
[13]张小亮.基体密度对MoSi2-RSiC复合材料组成、微观结构和性能的影响[D].长沙,湖南大学硕士学位论文,2015.
[14]谢文.三维网络结构MoSi2/RSiC复合材料微观结构调控及性能研究[D].长沙,湖南大学博士学位论文,2016.
[15]刘伯威,潘进,杨德明,等.碳对二硅化钼复合材料性能的影响[J].粉末冶金材料科学与工程,2000,(4):295-300.LIU B W,PAN J,YANG D M,et al.Materials Science and Engineering of Powder Metallurgy,2000,(4):295-300.
[16]BERZTISS D A,CERCHIARA R R,GULBRANSEN E A,et al.Oxidation of MoSi2 and comparison with other silicide materials[J].Materials Science&Engineering A,1992,155(1-2):165-181.
[17]KUMAR S,SAIRAM K,SONBER J K,et al.Hot-pressing of MoSi2 reinforced B4C composites[J].Ceramics International,2014,40:16099-16105.
[18]高朋召,张小亮,黄诗婷,等.熔渗温度对MoSi2(Cr5Si3)-RSiC复合材料显微结构和性能的影响[J].硅酸盐学报,2014,42(9):1105-1110.GAO P Z,ZHANG X L,HUANG S T,et al.Journal of the Chinese Ceramic Society,2014,42(9):1105-1110.
[19]SHUR M,RUMYANTSEV S.碳化硅半导体材料与器件[M].电子工业出版社,2012.
[20]YAO Z,STIGLICH J,SUDARSHAN T S.Molybdenum silicide based materials and their properties[J].J Mater Eng Perform,1999,8:291-304.
[21]吕华南,高朋召,徐墨雨,等.高温氧化时间对MoSi2-RSiC复合材料组成、微观结构和性能的影响[J].湖南大学学报(自然科学版),2017,44(6):45-51.LV H N,GAP P Z,XU M Y,et al.Journal of Hunan University(Natural Sciences),2017,44(6):45-51.