摘要
用双离子束镀膜方法在W基底表面制备不同厚度的Cr薄膜.用冷场扫描电镜能谱分析仪对镀膜样品成分深度分布进行分析,使用重离子加速器对镀膜样品进行高能、低束流的氢或氘辐照,用扫描电镜对样品表面形貌变化进行分析,运用粒子注入射程模拟软件SRIM对氢粒子在Cr/W双层块体中的射程进行模拟分析.实验结果表明,运用双离子束镀膜法能够在膜与基底的接触面区域制得Cr/W混合过渡层;在高能、低束流的氢或氘辐照下,Cr/W混合过渡层易于使气体滞留而起泡,双离子束制备的Cr膜层不易聚集氢或氘气体成泡.
Cr films with different thickness values on W substrates are prepared by double-ion-beam-deposition(DIBD) method.The deep distributions of Cr and W are analyzed by energy dispersive spectrometer. Hydrogen and deuterium irradiation of high energy and low flux are carried out in heavy ion accelerator. The changes of the sample surface morphology are analyzed by scanning electron microscopy. The injection range of hydrogen particles in double layers of Cr/W is simulated by simulation software SRIM. The experimental results demonstrate that a Cr/W mixture transitional layer is formed at the interface between Cr and W using DIBD method; hydrogen and deuterium of high energy and low flux tend to be retained in the Cr/W mixture transitional layer and form gas bubbles, while the Cr film is not easy to retain enough hydrogen or deuterium to form gas bubbles.
引文
[1]Zhang Z J,Zhong Z H,Shen W P 2005 Mater.Rev.1956(in Chinese)[周张健,钟志宏,沈卫平2005材料导报19 56]
[2]Li Y K,Ji K J 1999 Mater.Rev.13 5(in Chinese)[李云凯,纪康俊1999材料导报13 5]
[3]LüG H,Luo G N,Li J G 2010 Mater.Chin.29 42(in Chinese)[吕广宏,罗广南,李建刚2010中国材料进展2942]
[4]Wang X X,Zhang Y,Zhou H B,Wang J L 2014 Acta Phys.Sin.63 046103(in Chinese)[王欣欣,张颖,周洪波,王金龙2014物理学报63 046103]
[5]Zou X Q,Xue J M,Wang Y G 2010 Chin.Phys.B 19036102
[6]Yang X,Liu S,Zheng H,Zhao Y,Xiong L Y,Wang L B 2003 Acta Phys.Sin.52 756(in Chinese)[杨勋,刘实,郑华,赵越,熊良钺,王隆保2003物理学报52 756]
[7]Liu Y L,Jin S,Zhang Y 2012 Chin.Phys.B 21 016105
[8]Luo G N,Shu W M,Nishi M 2006 Fusion Eng.Des.81957
[9]Liu Y L 2010 Ph.D.Dissertation(Beijing:Beijing University of Aeronautics and Astronautics)(in Chinese)[刘悦林2010博士学位论文(北京:北京航空航天大学)]
[10]Lee H,Haasz A,Davis J,Mac Aulaynewcombe R,Whyte D,Wright G 2007 J.Nucl.Mater.360 196
[11]Tyburska B,Alimov V K,Ogorodnikova O V,Schmid K,Ertl K 2009 J.Nucl.Mater.390–391 651
[12]Wang W M,Roth J,Lindig S,Wu C H 2003 Nucl.Sci.Tech.26 429(in Chinese)[王玟珉,Roth J,Lindig S,Wu C H 2003核技术26 429]
[13]Shu W M,Nakamichi M,Alimov V K,Luo G N,Isobe K,Yamanishi T 2009 J.Nucl.Mater.390–391 1017
[14]Zhang W Z,Tang X H,Li J Q,Shi L Q 2013 Acta Phys.Sin.62 195202(in Chinese)[张文钊,唐兴华,李嘉庆,施立群2013物理学报62 195202]
[15]Loarte A,Becoulet M,Saibene1 G,Sartori1 R,Campbell D J,Eich T,Herrmann A,Laux M,Suttrop W,Alper B,Lomas P J,Matthews G,Jachmich S,Ongena J,Innocente P 2002 Plasma Phys.Control.Fusion 441815
[16]Sugiyama K,Krieger K,Lungn C P,Roth J 2009 J.Nucl.Mater.390–391 659
[17]Shu W M,Luo G N,Yamanishi T 2007 J.Nucl.Mater.367–370 1463
[18]Luo G N,Umstadter K,Shu W M,Wampler W,Lu G H 2009 Nucl.Instrum.Methods Phys.Res.Sect.B 2673041
[19]Causey R,Wilson K,Venhaus T,Wampler W R 1999 J.Nucl.Mater.266–269 467
[20]Zhang Y,Wang W,Ren H T,Han W J,Liu F S,Yu J G,Peng S X,Zhu K G 2013 Nucl.Instrum.Methods Phys.Res.Sect.B 307 357
[21]Anderl R A,Pawelko R J,Schuetz S T 2001 J.Nucl.Mater.290–293 38
[22]Kurishita H,Matsuo S,Arakawa H,Sakamoto T,Kobayashi S,Nakai K,Takida T,Kato M,Kawai M,Yoshida N 2012 J.Nucl.Mater.398 87
[23]Doerner R P,Baldwin M J,Nishijima D,Roth J,Schmid K 2011 J.Nucl.Mater.415 717
[24]Baldwin M J,Doerner R P,Nishijima D,Tokunaga K,Ueda Y 2009 J.Nucl.Mater.390–391 886
[25]Xiao D Q,Zhu J G,Zhu J L,Shen L 2011 Thin Film Physics and Devices(Beijing:National Defence Industry Press)pp66–68(in Chinese)[肖定全,朱建国,朱基亮,申林2011薄膜物理与器件(北京:国防工业出版社)第66—68页]
[26]Wang P X,Song J S 2002 Permeation of Helium and Hydrogen in Materials(Beijing:National Defence Industry Press)p69(in Chinese)[王佩璇,宋家树2002材料中的氦及氚渗透(北京:国防工业出版社)第69页]
[27]Wan F R 1993 Irradiation Damage of Metal Materials(Beijing:Science Press)pp87–92(in Chinese)[万发荣1993金属材料的辐照损伤(北京:科学出版社)第87—92页]