表面处理降低GaAs界面态密度的研究
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摘要
GaAs材料经机械研磨后,表层形成粗糙界面,用酸碱法表面处理GaAs,使Ga-O、As-O键断裂并修复粗糙界面,处理效果通过电导法测量界面态密度与XPS分析界面化合物价态来表征。结果表明酸碱处理均可降低界面态密度与表面Ga、As氧化物,且酸处理的效果优于碱处理,Ga-O化合物去除率高于As-O化合物去除率,界面态密度的降低可能主要与Ga化合物的减少相关。
GaAs material surface forms a rough interface after mechanical lapping. Surface treatment of GaAs with acid and alkali,makes Ga-O and As-O bond fracture and repairs the rough interface. The treatment effect is characterized by the conductance method to measure the interface state density and the XPS analysis interface compound valence state. The results show that both acid and alkali treatment can reduce the interface state density and Ga,As oxide on the surface,and acid treatment is better than alkali treatment,Ga-O compound removal rate higher than the As-O compound removal rate. The reduction of interface state density may be mainly related to the decrease of Ga compounds.
GaAs material surface forms a rough interface after mechanical lapping. Surface treatment of GaAs with acid and alkali,makes Ga-O and As-O bond fracture and repairs the rough interface. The treatment effect is characterized by the conductance method to measure the interface state density and the XPS analysis interface compound valence state. The results show that both acid and alkali treatment can reduce the interface state density and Ga,As oxide on the surface,and acid treatment is better than alkali treatment,Ga-O compound removal rate higher than the As-O compound removal rate. The reduction of interface state density may be mainly related to the decrease of Ga compounds.
引文
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[4]Andrew D C,William J M,Brian J T,et al.Al2O3Growth on(100)In0.53Ga0.47As Initiated by Cyclictrimethyl Aluminum and Hydrogen Plasma Exposures[J].Applied Physics Express,2011,4:091102.
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[6]Yuan Wenyu,Xu Jingping,Liu Lu,et al.Improved Interfacial and Electrical Properties of Ge MOS Devices with Zr ON/Ge ON Dual Passivation Layer[J].Journal of Semiconductors,2016,37(5):47-51.
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[9]Hong M,Kwo J,Lin T D,et al.In Ga As Metal Oxide Semiconductor Devices with Ga2O3(Gd2O3)High-k Dielectrics for Science and Technology beyond Si CMOS[J].MRS Bulletin,2009,34(7):514-521.
[10]Baer D R,Engelhard M H.XPS Analysis of Nanostructured Materials and Biological Surfaces[J].Journal of Electron Spectroscopy and Related Phenomena,2009,178(2010):415-432.
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[12]Paul C Mc Intyre,Yasuhiro Oshima,Eunji Kim,et al.Interface Studies of ALD-Grown Metal Oxide Insulators on Ge and III-VSemiconductors[J].Microelectronic Engineering,2009,86(7):1536-1539.