InSb红外探测器芯片粘接工艺研究
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摘要
基于InSb红外探测器的封装特点,采用正交试验法研究了芯片粘接过程中基板平整度、粘接剂抽真空时间、配胶时间、固化条件等工艺参数对芯片性能及可靠性的影响。通过计算极差和方差分析了各因素对芯片可靠性的影响大小。结果表明,固化条件对粘接后芯片的性能影响最大,其次是配胶时间,而抽真空时间和基板平整度影响相对较小。针对极差分析得出的较优参数组合和较差参数组合,利用X射线衍射(XRD)研究了不同参数组合对晶片粘接的应力大小,所得结果与正交试验一致。
Based on the packaging features of In Sb IR detector,orthogonal experiment is designed for studying the parameters such as substrate bending,vacuuming time of adhesive,preparing time of adhesive and solidify condition,which can influence the electrical properties and reliability of In Sb chip during die bonding processing. Range and variance is calculated to evaluate the influence level of the parameters on In Sb chip. The results show that the solidify condition has the greatest influence on the electrical performance of the In Sb chip after bonding,followed by the preparing time of adhesive,while the vacuuming time of adhesive and the flatness of the substrate have relatively little influence. According to the optimal combination and poor combination of parameters,the stress in In Sb chip caused by different combination is investigated with XRD,and the results were consistent with the orthogonal experiment.
Based on the packaging features of In Sb IR detector,orthogonal experiment is designed for studying the parameters such as substrate bending,vacuuming time of adhesive,preparing time of adhesive and solidify condition,which can influence the electrical properties and reliability of In Sb chip during die bonding processing. Range and variance is calculated to evaluate the influence level of the parameters on In Sb chip. The results show that the solidify condition has the greatest influence on the electrical performance of the In Sb chip after bonding,followed by the preparing time of adhesive,while the vacuuming time of adhesive and the flatness of the substrate have relatively little influence. According to the optimal combination and poor combination of parameters,the stress in In Sb chip caused by different combination is investigated with XRD,and the results were consistent with the orthogonal experiment.
引文
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[9]XIONG Xiong,ZHU Yingfeng,WANG Wei,et al.Die attach technology in Hg Cd Te IRFPA detector package[J].Infrared Technology,2012,34(8):444-447.(in Chinese)熊雄,朱颖峰,王微等.Hg Cd Te焦平面红外探测器封装中的芯片粘接技术[J].红外技术,2012,34(8):444-447.
[10]XIE Jing,LI Bing,LI Yuanjie,et al.Study of Zn S thin films prepared by RF magnetron sputtering technique[J].Acta Physica Sinica,2010,59(8):5749-5754.(in Chinese)谢婧,黎兵,李愿杰等.射频磁控溅射法制备Zn S多晶薄膜及其性质[J].物理学报,2010,59(8):5749-5754.
[2]L Shkedy,T Markovitz,Z Calahorra,et al.Megapixel digital In Sb detector for midwave infrared imaging[J].Optical Engineering,2011,50(6):1-8.
[3]LW Stephen.New technologies for FPA dewars[J].Proceeding of SPIE,1992,1683:102-112.
[4]LI Jianlin.A reliable design of Hg Cd Te chips attachment[J].Infrared Technolog,2000,22(1):29-32.(in Chinese)李建林.Hg Cd Te芯片粘接可靠性设计[J].红外技术,2000,22(1):29-32.
[5]LIU Dafu,WU Ligang,XU Guosun,et al.Reliability of long wavelength PC Hg Cd Te IR detectors[J].Infrared and Laser Engineering,2006,35(3):289-293.(in Chinese)刘大福,吴礼刚,徐国森等.长波光导Hg Cd Te红外探测器的可靠性[J].红外与激光工程,2006,35(3):289-293.
[6]GE Qiuling,WANG Yang,DING Rongzheng.Failure mode of die bonding and improved path of bonding strength[J].Electronics&Packaging,2009,9(6):1-4.(in Chinese)葛秋玲,王洋,丁荣峥.芯片粘接失效模式及粘接强度提高途径[J].电子与封装,2009,9(6):1-4.
[7]Meng Qingduan,Tian Wei,LüYanqiu,et al.Analysis of structural stress in 8×8 In Sb array detector[J].Open Electricaland Electronic Engineering,2011,5(1):24-28.
[8]MENG Qingduan,LV Yanqiu,LU Zhengxiong,et al.Stress in In Sb infrared focal plane array detector analyzed with ANSYS[J].Journal of Infrared and Millimeter Waves,2010,29(6):431-434.(in Chinese)孟庆端,吕衍秋,鲁正雄等.In Sb红外焦平面探测器结构应力的ANSYS分析[J].红外与毫米波学报,2010,29(6):431-434.
[9]XIONG Xiong,ZHU Yingfeng,WANG Wei,et al.Die attach technology in Hg Cd Te IRFPA detector package[J].Infrared Technology,2012,34(8):444-447.(in Chinese)熊雄,朱颖峰,王微等.Hg Cd Te焦平面红外探测器封装中的芯片粘接技术[J].红外技术,2012,34(8):444-447.
[10]XIE Jing,LI Bing,LI Yuanjie,et al.Study of Zn S thin films prepared by RF magnetron sputtering technique[J].Acta Physica Sinica,2010,59(8):5749-5754.(in Chinese)谢婧,黎兵,李愿杰等.射频磁控溅射法制备Zn S多晶薄膜及其性质[J].物理学报,2010,59(8):5749-5754.