6H-SiC衬底上AlGaN基垂直结构紫外LED的制备
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摘要
利用金属有机物化学气相沉积方法,在n型6H-SiC衬底上制备了15对Si掺杂Al_(0.19)Ga_(0.81)N/Al_(0.37)Ga_(0.63)N DBR,并采用低温AlN缓冲层有效抑制了DBR结构中裂纹的产生,得到了表面均方根粗糙度仅为0.4 nm且导电性能良好的n型DBR,其在369 nm处峰值反射率为68%,阻带宽度为10 nm。在获得导电DBR的基础上,进一步在n型6H-SiC衬底上构建了有、无DBR的垂直结构紫外LED。对比两者电致发光光谱,发现DBR结构的引入有效增强了LED紫外发光强度。
Silicon-doped Al_(0. 19)Ga_(0. 81)N/Al_(0. 37)Ga_(0. 63) N DBRs were grown on n-type 6H-SiC substrates by metal organic chemical vapor deposition( MOCVD). To suppress the generation of cracks,a lowtemperature AlN pre-deposition layer on 6H-SiC( 0001) substrate was used as buffer. A smooth-surface 15-pair electrically conducting DBR with a reflectance of 68% at 369 nm was obtained. The stop-band bandwidth and RMS value of DBR are 10 nm and 0. 4 nm,respectively. Furthermore,the vertical structure UV LEDs with and without n-DBR on 6H-SiC substrate were fabricated. By comparing EL spectra,it is shown that the introduction of DBR structure can effectively improve the UV emission.
Silicon-doped Al_(0. 19)Ga_(0. 81)N/Al_(0. 37)Ga_(0. 63) N DBRs were grown on n-type 6H-SiC substrates by metal organic chemical vapor deposition( MOCVD). To suppress the generation of cracks,a lowtemperature AlN pre-deposition layer on 6H-SiC( 0001) substrate was used as buffer. A smooth-surface 15-pair electrically conducting DBR with a reflectance of 68% at 369 nm was obtained. The stop-band bandwidth and RMS value of DBR are 10 nm and 0. 4 nm,respectively. Furthermore,the vertical structure UV LEDs with and without n-DBR on 6H-SiC substrate were fabricated. By comparing EL spectra,it is shown that the introduction of DBR structure can effectively improve the UV emission.
引文
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[2]MOUDAKIR T,GAUTIER S,SURESH S,et al..Suppression of crack generation in Al Ga N/Ga N distributed Bragg reflectors grown by MOVPE[J].J.Cryst.Growth,2013,370:12-15.
[3]王军喜,闫建昌,郭亚楠,等.氮化物深紫外LED研究新进展[J].中国科学:物理学力学天文学,2015,45(6):067303-1-20.WANG J X,YAN J C,GUO Y N,et al..Recent progress of research on III-nitride deep ultraviolet light-emitting diode[J].Sci.Sinica Phys.Mech.Astron.,2015,45(6):067303-1-20.(in Chinese)
[4]陈航洋,刘达艺,李金钗,等.高Al组分Ⅲ族氮化物结构材料及其在深紫外LED应用的进展[J].物理学进展,2013,33(2):43-56.CHEN H Y,LIU D Y,LI J C,et al..Development of high Al content structural III nitrides and their applications in deep UV-LED[J].Prog.Phys.,2013,33(2):43-56.(in Chinese)
[5]LIU X T,LI D B,SUN X J,et al..Stress-induced in situ epitaxial lateral overgrowth of high-quality Ga N[J].Cryst Eng Comm,2014,16(34):8058-8063.
[6]路慧敏,陈根祥.极化效应对In Ga N/Ga N多量子阱结构光电特性的影响[J].发光学报,2011,32(3):266-271.LU H M,CHEN G X.Influence of polarization effect on optoelectronic properties of In Ga N/Ga N multiple quantum well[J].Chin.J.Lumin.,2011,32(3):266-271.(in Chinese)
[7]LI J M,LIU Z,LIU Z Q,et al..Advances and prospects in nitrides based light-emitting-diodes[J].J.Semicond.,2016,37(6):061001-1-14.
[8]HUANG Z,ZHANG Y T,ZHAO B J,et al..Effects of Al N buffer on the physical properties of Ga N films grown on 6HSi C substrates[J].J.Mater.Sci.:Mater.Electron.,2016,27(2):1738-1744.
[9]GUO H,ZHAO Y Q,ZHANG Y M,et al..Influence of n-type doping on the oxidation rate in n-type 6H-Si C[J].J.Semicond.,2015,36(1):013006-1-5.
[10]ADIVARAHAN V,HEIDARI A,ZHANG B.Vertical injection thin film deep ultraviolet light emitting diodes with Al Ga N multiple-quantum wells active region[J].Appl.Phys.Express,2009,2(9):092102.
[11]SHI ZH F,XIA X C,YIN W,et al..Dominant ultraviolet electroluminescence from p-Zn O∶as/n-Si C(6H)heterojunction light-emitting diodes[J].Appl.Phys.Lett.,2012,100(10):101112-1-4.
[12]CANTU P,WU F,WALTEREIT P,et al..Role of inclined threading dislocations in stress relaxation in mismatched layers[J].J.Appl.Phys.,2005,97(10):103534-1-10.
[13]ACORD J D,MANNING I C,WENG X J,et al..In situ measurement of stress generation arising from dislocation inclination in AlxGa1-xN∶Si thin films[J].Appl.Phys.Lett.,2008,93(11):111910-1-3.
[14]MANNING I C,WENG X,ACORD J D,et al..Tensile stress generation and dislocation reduction in Si-doped AlxGa1-xN films[J].J.Appl.Phys.,2009,106(2):023506-1-7.
[15]HUANG G S,LU T C,YAO H H,et al..Crack-free Ga N/Al N distributed Bragg reflectors incorporated with Ga N/Al N superlattices grown by metalorganic chemical vapor deposition[J].Appl.Phys.Lett.,2006,88(6):061904-1-3.
[16]TAO P C,LIANG H W,WANG D S,et al..Crack-free Al Ga N/Ga N distributed Bragg reflectors synthesized by insertion of a thin Si Nxinterlayer grown on 6H-Si C substrate by metal-organic chemical vapor deposition[J].Mater.Sci.Semicond.Process.,2014,27:841-845.
[17]WANG D S,LIANG H W,TAO P C,et al..Crack-free ultraviolet Al Ga N/Ga N distributed Bragg reflectors grown by MOVPE on 6H-Si C(0001)[J].Superl.Microstruct.,2014,70:54-60.
[18]LIU Y S,HAQ A F M S,KAO T T,et al..Electrically conducting n-type Al Ga N/Ga N distributed Bragg reflectors grown by metalorganic chemical vapor deposition[J].J.Cryst.Growth,2016,443:81-84.
[19]IKEYAMA K,KOZUKA Y,MATSUI K,et al..Room-temperature continuous-wave operation of Ga N-based vertical-cavity surface-emitting lasers with n-type conducting Al In N/Ga N distributed Bragg reflectors[J].Appl.Phys.Express,2016,9(10):102101-1-4.
[20]宿世臣,吕有明.Zn Mg O/n-Zn O/Zn Mg O/p-Ga N异质结LED的紫外电致发光[J].发光学报,2011,32(8):821-824.SU S C,LV Y M.Ultraviolet electroluminescence of Zn Mg O/n-Zn O/Zn Mg O/p-Ga N heterojunction light emitting diode[J].Chin.J.Lumin.,2011,32(8):821-824.(in Chinese)
[21]KARPOV S Y,MAKAROV Y N.Dislocation effect on light emission efficiency in gallium nitride[J].Appl.Phys.Lett.,2002,81(25):4721-4723.
[22]KNEISSL M,KOLBE T,CHUA C,et al..Advances in group III-nitride-based deep UV light-emitting diode technology[J].Semicond.Sci.Technol.,2011,26(1):014036-1-6.
[23]IM J S,MORITZ A,STEUBER F,et al..Radiative carrier lifetime,momentum matrix element,and hole effective mass in Ga N[J].Appl.Phys.Lett.,1997,70(5):631-633.