PBN坩埚生长碲锌镉单晶的性能与缺陷研究
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摘要
采用垂直布里奇曼法,利用热解氮化硼(PBN)坩埚生长碲锌镉单晶(CdZnTe),并对晶体进行定向、切割与磨抛制成(111)面碲锌镉晶片。采用傅里叶红外透过光谱仪、红外透射显微镜、金相显微镜、X射线形貌仪、X射线衍射仪和X射线双晶衍射仪等仪器系统地检测和研究了碲锌镉晶体的性能与缺陷。研究发现:相比于石英坩埚,采用PBN坩埚生长的碲锌镉晶体单晶率和出片率均大幅增加,孪晶、小角晶界和位错密度明显减少。
Cadmium zinc telluride single crystals(CdZnTe) are grown by the Bridgman method using porolytic boron nitride crucible,and directed、sliced up and burnished as face(111) wafer. The performance and the defects in CdZnTe samples were systematically studied by the Fourier infrared spectrometer,infrared transmission microscope,metallographic microscope,X-ray topography,X-ray diffractometer and X-ray double crystal diffraction. It found that compared with grown by the quartz crucible,proportion of single crystal and wafer yield of CdZnTe grown by PBN crucible were strongly increased,and twin,low angle boundary and etching dislocation density were significantly reduced.
Cadmium zinc telluride single crystals(CdZnTe) are grown by the Bridgman method using porolytic boron nitride crucible,and directed、sliced up and burnished as face(111) wafer. The performance and the defects in CdZnTe samples were systematically studied by the Fourier infrared spectrometer,infrared transmission microscope,metallographic microscope,X-ray topography,X-ray diffractometer and X-ray double crystal diffraction. It found that compared with grown by the quartz crucible,proportion of single crystal and wafer yield of CdZnTe grown by PBN crucible were strongly increased,and twin,low angle boundary and etching dislocation density were significantly reduced.
引文
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[12] SHENG Fengfeng.Study of characteristics of defects in CdZnTe materials and the annealing technique[D].Beijing:University of Chinese Academy of Sciences Doctoral Dissertation,2014:44-52.(in Chinese)盛锋锋.CdZnTe材料缺陷特性及热处理技术研究[D].北京:中国科学院大学,2014:44-52.
[13] A Koyama,A Hichiwa,R Hirano.Recent progress in CdZnTe crystals[J].Journal of Electronic Materials,1999,28(6):683-687.
[2] TANG Shihong.Study of the defects and annealing of CZT crystals[D].Chengdu:Sichuan University,2006:11-15.(in Chinese)唐世红.碲锌镉晶体的缺陷及其退火研究[D].成都:四川大学,2006:11-15.
[3] FAN Yexia,XU Qiangqiang,WU Qing.Microdefects in cadmium zinc tellutide crystals[J].Infrared Technology,2018,39(8):694-699.(in Chinese)范叶霞,徐强强,吴卿.碲锌镉晶体中微观缺陷分析[J].红外技术,2018,39(8):694-699.
[4] SUN Niefeng.Synthesis,grown and characterization of bulk indium phosphide crystal[D].Tianjin:Tianjin University,2008,79-87.(in Chinese)孙聂枫.InP晶体合成、生长和特性[D].天津:天津大学,2008,79-87.
[5] XU Yadong.Growth and characterization of large-size Cd1-xZnxTe single crystal using seeded vertical Bridgman method[D].Xi′an:Northwestern Polytechnical University,2007:1-11.(in Chinese)徐亚东.大尺寸Cd1-xZnxTe晶体籽晶垂直布里奇曼法生长技术与性能表征[D].西安:西北工业大学,2007:1-11.
[6] A Hossain,A E Bolotnikov,G S Camarda.Investigation of structural defects in CdZnTe detector-grage crystals[J].Journal of Electronic Materials,2012,41(10):2908-2911.
[7] G Zha,W Jie,T Tian,et al.Study of dislocations in CdZnTe single crystals[J].Physica Status Solidi (a),2007,204(7):2196-2200.
[8] SUN Haiyan,SHAO Nan.Research of affect factors of CdZnTe transmission[J].Laser & Infrared,2005,35(5):348-351.(in Chinese)孙海燕,邵楠.对影响碲锌镉晶片红外透过率因素的研究[J].激光与红外,2005,35(5):348-351.
[9] Vydyanath H R,Ells worth J A,Fisher R F.Vapor phase equilibria in the CZT alloy system[ J].J.Electron.Mater.,1993,29(8):1067-1071.
[10] GAO Yuying.X ray diffraction topography:experimental technique[J].Laser & Infrared,1981,3:70-76.(in Chinese)高玉英.X射线衍射形貌法:实验技术[J].激光与红外,1981,3:70-76.
[11] SUN Shiwen.Growth and characterization of CdZnTe single crystals[D].Beijing:University of Chinese Academy of Sciences Doctoral Dissertation,2014:85-90.(in Chinese)孙士文.碲锌镉晶体生长与晶体质量研究[D].北京:中国科学院大学,2014:85-90.
[12] SHENG Fengfeng.Study of characteristics of defects in CdZnTe materials and the annealing technique[D].Beijing:University of Chinese Academy of Sciences Doctoral Dissertation,2014:44-52.(in Chinese)盛锋锋.CdZnTe材料缺陷特性及热处理技术研究[D].北京:中国科学院大学,2014:44-52.
[13] A Koyama,A Hichiwa,R Hirano.Recent progress in CdZnTe crystals[J].Journal of Electronic Materials,1999,28(6):683-687.