n型双面TOPCon太阳电池钝化技术
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摘要
隧穿氧化物钝化接触(TOPCon)技术已成为当前产业化高效太阳电池的重点研究方向之一。报道了可应用于规模化生产的n型双面TOPCon太阳电池技术,对前表面SiO_2/多晶硅钝化层进行了优化设计。为了有效降低接触电阻,太阳电池的背表面采用了全面积SiO_2/多晶硅钝化层结构;为避免多晶硅层对太阳光的寄生吸收,仅将SiO_2/多晶硅钝化层应用于前表面金属接触的底部。J-V特性和少子寿命等分析显示,双面TOPCon结构设计显著提升了太阳电池的表面钝化接触性能,其开路电压和短路电流密度显著增加。所制备的面积为239 cm~2的双面TOPCon太阳电池的平均正面转换效率可达20.33%,相对正面无SiO_2/多晶硅钝化层的常规钝化发射极及背表面全扩散(PERT)结构的太阳电池转换效率提升了0.29%。
Tunneling oxide passivation contact(TOPCon) technique has become one of the key research directions of industrialized high-efficiency solar cells. The n-type bifacial TOPCon solar cells technique which can be applied to mass production was reported, and the optimization design of SiO_2/poly Si passivation layer on front surface was completed. In order to reduce the contact resistance effectively, a full-area SiO_2/poly Si passivation layer was used on the back side of the solar cell, while the SiO_2/poly Si passivation layer was only applied to the bottom of the metal contact on the front side to avoid parasitic absorption of sunlight by the poly Si layer. The analyses of J-V characteristics and minority carrier lifetime show that the bifacial TOPCon structure design significantly improves the passivation contact performance of the solar cell surface and the open-circuit voltage and the short circuit current density of solar cells are significantly increased. Thus, the average front conversion efficiency of the prepared bifacial TOPCon solar cell with an area of 239 cm~2 can reach 20.33%, which is 0.29% higher than that of conventional passivated emitter and rear totally diffused(PERT) solar cells without SiO_2/poly Si passivation layer on the front side.
Tunneling oxide passivation contact(TOPCon) technique has become one of the key research directions of industrialized high-efficiency solar cells. The n-type bifacial TOPCon solar cells technique which can be applied to mass production was reported, and the optimization design of SiO_2/poly Si passivation layer on front surface was completed. In order to reduce the contact resistance effectively, a full-area SiO_2/poly Si passivation layer was used on the back side of the solar cell, while the SiO_2/poly Si passivation layer was only applied to the bottom of the metal contact on the front side to avoid parasitic absorption of sunlight by the poly Si layer. The analyses of J-V characteristics and minority carrier lifetime show that the bifacial TOPCon structure design significantly improves the passivation contact performance of the solar cell surface and the open-circuit voltage and the short circuit current density of solar cells are significantly increased. Thus, the average front conversion efficiency of the prepared bifacial TOPCon solar cell with an area of 239 cm~2 can reach 20.33%, which is 0.29% higher than that of conventional passivated emitter and rear totally diffused(PERT) solar cells without SiO_2/poly Si passivation layer on the front side.
引文
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[4] MASUKO K,SHIGEMATSU M,HASHIGUCHI T,et al.Achievement of more than 25% conversion efficiency with crystalline silicon heterojunction solar cell [J].IEEE Journal of Photovoltaics,2014,4(6):1433-1435.
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[6] ADACHI D,HERNANDEZ J L,YAMAMOTO K.Impact of carrier recombination on factor for large area heterojunction crystalline Si solar cell with 25.1% efficiency [J].Applied Physics Letters,2015,107(23):233506-1-233506-3.
[7] YOSHIKAWA K,YOSHIDA W,IRIE T,et al.Exceeding conversion efficiency of 26% by heterojunction interdigitated back contact solar cell with thin film Si technology [J].Solar Energy Materials and Solar Cells,2017,173:37-42.
[8] YOSHIKAWA K,KAWASAKI H,YOSHIDA W,et al.Silicon heterojunction solar cell with interdigitated back contacts for a photoconversion efficiency over 26% [J].Nature Energy,2017,2(5):17032-17039.
[9] GAN J Y,SWANSON R M.Polysilicon emitters for silicon concentrator solar cells [C] // Proceedings of IEEE Conference on Photovoltaic Specialists.Kissimmee,FL,USA,1990:245-250.
[10] MOLDOVAN A,FELDMANN F,KAI K,et al.Tunnel oxide passivated carrier-selective contacts based on ultra-thin SiO2 layers [J].Solar Energy Materials and Solar Cells,2015,142:123-127.
[11] FELDMANN F,BIVOUR M,REICHEL C,et al.Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics [J].Solar Energy Materials and Solar Cells,2014,120:270-274.
[12] RICHTER A,BENICK J,FELDMANN F,et al.n-Type Si solar cells with passivating electron contact:identifying sources for efficiency limitations by wafer thickness and resistivity variation [J].Solar Energy Materials and Solar Cells,2017,173:96-105.
[13] FELDMANN F,SIMON M,BIVOUR M,et al.Efficient carrier-selective p- and n-contacts for Si solar cells [J].Solar Energy Materials and Solar Cells,2014,131:100-104.
[14] SONG D,XIONG J.Fabrication and characterization of high efficiency bifacial n-type silicon solar cell and PV modules [J].Acta Energiae Solaris Sinica,2013,34(12):2146-2150.