高气压不同碳源浓度对纳米金刚石薄膜生长影响研究
|
摘要
利用微波等离子体气相沉积法,以氢气、氩气、甲烷为气源,在20~26 k Pa,碳源浓度0.3%~1%条件下,通过改变气压与碳源浓度来制备纳米金刚石薄膜。运用Raman、SEM、XRD分别表征纳米金刚石薄膜的质量、表面形貌、晶粒大小。结果表明随着气压升高,沉积速率越快,薄膜质量先升高后降低。在一定气压范围内可以通过增大气压减少碳源浓度,能获得相对高质量的纳米金刚石薄膜。
The influence of total gas pressure(20~26 k Pa) and methane concentration(0.3% ~1%) on diamond growth using mixture gas of H2/Ar/CH4 source by microwave plasma chemical vapor deposition(MPCVD)was investigated. For a fixed methane concentration,characterization by Raman spectroscopy,scanning electron microscopy and X-ray diffraction indicated Characterization of nano diamond quality,surface morphology,grain size. The results show that growth rate increase with pressure increasing,but quality of nano-diamond films first become better then become worse while the pressure increases. Then using higher pressure and litter methane concentration could gain highly quality nanocrystalline diamond films.
The influence of total gas pressure(20~26 k Pa) and methane concentration(0.3% ~1%) on diamond growth using mixture gas of H2/Ar/CH4 source by microwave plasma chemical vapor deposition(MPCVD)was investigated. For a fixed methane concentration,characterization by Raman spectroscopy,scanning electron microscopy and X-ray diffraction indicated Characterization of nano diamond quality,surface morphology,grain size. The results show that growth rate increase with pressure increasing,but quality of nano-diamond films first become better then become worse while the pressure increases. Then using higher pressure and litter methane concentration could gain highly quality nanocrystalline diamond films.
引文
[1]You M S,Hong C N,Jeng Y R,et al.Low temperature growth of highly transparent nanocrystalline diamond films on quartz glass by hot filament chemical vapor deposition[J].Diamond&Related Materials,2009,18(2-3):155-159.
[2]Barbosa D C,Hammer P,Trava-Airoldi V J,et al.The valuable role of renucleation rate in ultrananocrystalline diamond growth[J].Diamond&Related Materials,2012,23:112-119.
[3]吕琳,汪建华,张莹.MPCVD法制备低粒径纳米金刚石薄膜的研究[J].真空与低温,2015,21(1):23-27.
[4]Liu J,Hei L F,Chen G C.Growth of ultrananocrystalline diamond films in an Ar-rich CH4/H2/Ar atmosphere with varying H2,concentrations[J].New Carbon Materials,2013,60(2):564-564.
[5]Li X,Perkins J,Collazo R,et al.Investigation of the effect of the total pressure and methane concentration on the growth rate and quality of diamond thin films grown by MPCVD[J].Diamond&Related Materials,2006,15(11-12):1784-1788.
[6]Show Y,Swope V M,Swain G M.The effect of the CH4,level on the morphology,microstructure,phase purity and electrochemical properties of carbon films deposited by microwaveassisted CVD from Ar-rich source gas mixtures[J].Diamond&Related Materials,2009,18(12):1426-1434.
[7]Liu Y K,Tzeng Y,Liu C,et al.Growth of microcrystalline and nanocrystalline diamond films by microwave plasmas in a gas mixture of 1%methane/5%hydrogen/94%argon[J].Diamond&Related Materials,2004,13(10):1859-1864.
[8]王光祖.纳米金刚石[M].郑州:郑州大学出版社,2009.
[9]李伟.纳米金刚石薄膜制备的研究[D].武汉:武汉工程大学,2014.
[10]阎研,张树霖,郝少康,等.CVD金刚石膜中1 145 cm-1拉曼峰的研究[J].光散射学报,2004,16(2):131-135.
[11]徐锋,左敦稳,卢文壮,等.纳米金刚石薄膜的微结构和残余应力[J].金属学报,2008,44(1):74-78.
[12]满卫东,翁俊,吴宇琼,等.MPCVD法在基片边缘生长大颗粒金刚石的研究[J].人工晶体学报,2011,40(1):53-59.
[13]王志军,李红莲,董丽芳,等.衬底温度对电子辅助增强化学气相沉积金刚石膜的影响[J].人工晶体学报,2008,37(1):76-82.
[2]Barbosa D C,Hammer P,Trava-Airoldi V J,et al.The valuable role of renucleation rate in ultrananocrystalline diamond growth[J].Diamond&Related Materials,2012,23:112-119.
[3]吕琳,汪建华,张莹.MPCVD法制备低粒径纳米金刚石薄膜的研究[J].真空与低温,2015,21(1):23-27.
[4]Liu J,Hei L F,Chen G C.Growth of ultrananocrystalline diamond films in an Ar-rich CH4/H2/Ar atmosphere with varying H2,concentrations[J].New Carbon Materials,2013,60(2):564-564.
[5]Li X,Perkins J,Collazo R,et al.Investigation of the effect of the total pressure and methane concentration on the growth rate and quality of diamond thin films grown by MPCVD[J].Diamond&Related Materials,2006,15(11-12):1784-1788.
[6]Show Y,Swope V M,Swain G M.The effect of the CH4,level on the morphology,microstructure,phase purity and electrochemical properties of carbon films deposited by microwaveassisted CVD from Ar-rich source gas mixtures[J].Diamond&Related Materials,2009,18(12):1426-1434.
[7]Liu Y K,Tzeng Y,Liu C,et al.Growth of microcrystalline and nanocrystalline diamond films by microwave plasmas in a gas mixture of 1%methane/5%hydrogen/94%argon[J].Diamond&Related Materials,2004,13(10):1859-1864.
[8]王光祖.纳米金刚石[M].郑州:郑州大学出版社,2009.
[9]李伟.纳米金刚石薄膜制备的研究[D].武汉:武汉工程大学,2014.
[10]阎研,张树霖,郝少康,等.CVD金刚石膜中1 145 cm-1拉曼峰的研究[J].光散射学报,2004,16(2):131-135.
[11]徐锋,左敦稳,卢文壮,等.纳米金刚石薄膜的微结构和残余应力[J].金属学报,2008,44(1):74-78.
[12]满卫东,翁俊,吴宇琼,等.MPCVD法在基片边缘生长大颗粒金刚石的研究[J].人工晶体学报,2011,40(1):53-59.
[13]王志军,李红莲,董丽芳,等.衬底温度对电子辅助增强化学气相沉积金刚石膜的影响[J].人工晶体学报,2008,37(1):76-82.