线速度对金刚石线锯及硅片表面质量的影响
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摘要
为了考察线速度对金刚石线锯切割过程的影响,研究了不同线速度条件下金刚石线锯的磨损情况以及硅片表面质量情况,通过SEM及粗糙度仪对切后线材、硅片等进行微观及量化分析。结果表明:线速度由1 300m/min提高至1 800 m/min,金刚石线锯磨损量由3.5μm逐渐降低到2.5μm,降幅为28.6%;金刚石线锯切割硅材料为塑性及脆性模式混合去除,硅片表面的形貌呈现沟槽状、连续划痕并伴随大量凹坑;随着线速度的增加,硅片表面粗糙度逐渐减小,算数平均粗糙度R_a、最大高度R_z以及最大表面粗糙度R_t数值分别下降了33.7%、37.8%、45.6%,表面凹坑数量随着线速度的增大也逐渐减少。
The wear of wire and the surface quality of silicon wafer under different wire speeds were studied.The micro and quantitative analysis of the used wire and silicon wafer was investigated by SEM and roughness instrument.The results showed that the smaller the wear of diamond wire with the wire speed increasing from 3.5μm to 2.5μm;;diamond wire cutting silicon materials for plastic and brittle mixed mode of removal of silicon surface profile showed a continuous groove,accompanied by a large number of scratches and pits,with the wire speed increasing the surface roughness of silicon wafer was gradually decreased,R_a、R_z and R_t decreased by 33.7%、37.8%、45.6%,the number of surface pits also gradually reduced.
The wear of wire and the surface quality of silicon wafer under different wire speeds were studied.The micro and quantitative analysis of the used wire and silicon wafer was investigated by SEM and roughness instrument.The results showed that the smaller the wear of diamond wire with the wire speed increasing from 3.5μm to 2.5μm;;diamond wire cutting silicon materials for plastic and brittle mixed mode of removal of silicon surface profile showed a continuous groove,accompanied by a large number of scratches and pits,with the wire speed increasing the surface roughness of silicon wafer was gradually decreased,R_a、R_z and R_t decreased by 33.7%、37.8%、45.6%,the number of surface pits also gradually reduced.
引文
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[7]LAMBROPOULOS J C,JACOBS S D,RUNCHMAN J.Material removal mechanisms from grinding to polishing[J].Ceramic Transactions,1999,102:113–128.
[8]WANG P Z,GE P Q,GAO Y F,et al.Prediction of sawing force for single-crystal silicon carbide with fixed abrasive diamond wire saw[J].Materials Science in Semiconductor Processing,2017,63:25–32.
[2]SUZUKI T,NISHINO Y,YAN J W.Mechanisms of material removal and subsurface damage in fixed-abrasive diamond wire slicing of single-crystalline silicon[J].Precision Engineering,2017,50:32–43.
[3]MEIβNER D,SCHOENFELDER S,HURKA B,et al.Loss of wire tension in the wire web during the slurry based multi wire sawing process[J].Solar Energy Materials&Solar Cells,2014,120:346–355.
[4]何健,徐中民,宋丽,等.往复式线切割对单晶硅表面粗糙度的影响[J].材料科学与工程学报,2015,33(5):692–696.HE Jian,XU Zhongmin,SONG Li,et al.Influence on surface roughness of single-crystal silicon by reciorocating wire cutting process[J].Journal of Materials Science&Engineering,2015,33(5):692–696.
[5]张玉兴,黄辉,徐西鹏.金刚石线切割单晶碳化硅锯切力的实验研究[J].金刚石与磨料磨具工程,2014,34(1):6–14.ZHANG Yuxing,HUANG Hui,XU Xipeng.Investigation of sawing force about diamond wire sawing single crystal silicon carbide[J].Diamond&Abrasives Engineering,2014,34(1):6–14.
[6]高玉飞,葛培琪,李绍杰.往复式电镀金刚石线锯切割单晶硅片特性研究[J].人工晶体学报,2009,38(2):372–377.GAO Yufei,GE Peiqi,LI Shaojie.Study on the machining performance of single crystal silicon wafer cut by using reciprocating electroplated diamond wire saw[J].Journal of Synthetic Crystals,2009,38(2):372–377.
[7]LAMBROPOULOS J C,JACOBS S D,RUNCHMAN J.Material removal mechanisms from grinding to polishing[J].Ceramic Transactions,1999,102:113–128.
[8]WANG P Z,GE P Q,GAO Y F,et al.Prediction of sawing force for single-crystal silicon carbide with fixed abrasive diamond wire saw[J].Materials Science in Semiconductor Processing,2017,63:25–32.