~(60)Coγ射线辐照单层石墨烯的损伤效应
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摘要
石墨烯是一种在常温下拥有极低的电阻率、极高的电子迁移率和高透光性的零带隙能带结构的新型碳材料,由于石墨烯优异的电学特性、光学特性和光电性能使它为研制下一代超快、高频、宽光谱光电器件提供了可能,目前已有许多基于石墨烯的光电探测器件研究,若将此类器件未来应用于航天器必有巨大优势。基于此本工作首先用化学气相沉积法制备了单层多晶石墨烯,然后进行了伽马射线辐照单层石墨烯实验,并用拉曼光谱表征了辐照前后石墨烯微观结构变化,对辐照后石墨烯的缺陷间平均距离,缺陷密度等进行了分析,辐照使单层石墨烯产生缺陷,出现无序的sp~3杂化结构。此研究可为石墨烯光电器件在外层空间中的应用打下基础,为其他空间环境因素对石墨烯的影响研究提供借鉴参考。
Single-layered polycrystalline graphene,synthesized by chemical vapor deposition(CVD),was modified by ~(60)Coγ-ray irradiation.The effect of the γ-ray irradiation on the microstructures,electronic structures and photoelectric properties of the single-layered graphene was investigated with Raman spectroscopy.The results show that the γ-ray irradiation had a major impact on the microstructure and electronic structure.To be specific,depending on the dosage and energy,the γ-ray irradiation was responsible for the formation of quite a few disordered sp~3 hybrid bonds because of the irradiation induced defects,though weakly affecting the dominance of sp~2 hybrid orbitals.Irradiated by γ-ray dosage of 94 krad and energy of 1.3325 MeV,the average separation of the γ-ray induced defects was estimated to be 13.04 nm,indicating that single-layered graphene has some irradiation resistance as a potential optoelectronic material for spacecraft missions.
Single-layered polycrystalline graphene,synthesized by chemical vapor deposition(CVD),was modified by ~(60)Coγ-ray irradiation.The effect of the γ-ray irradiation on the microstructures,electronic structures and photoelectric properties of the single-layered graphene was investigated with Raman spectroscopy.The results show that the γ-ray irradiation had a major impact on the microstructure and electronic structure.To be specific,depending on the dosage and energy,the γ-ray irradiation was responsible for the formation of quite a few disordered sp~3 hybrid bonds because of the irradiation induced defects,though weakly affecting the dominance of sp~2 hybrid orbitals.Irradiated by γ-ray dosage of 94 krad and energy of 1.3325 MeV,the average separation of the γ-ray induced defects was estimated to be 13.04 nm,indicating that single-layered graphene has some irradiation resistance as a potential optoelectronic material for spacecraft missions.
引文
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[2] Novoselov K S,Geim A K,Morozov S V,et al.Electric Field Effect in Atomically Thin Carbon Films[J].Science,2004,306(5296):666-669
[3] Mermin N D,Erratum:Crystalline Order in Two Dimensions[J].Physical Review,1979,B20(11):4762-4762
[4] Bolotin K I,Sikes K J,Jiang Z,et al.Ultrahigh Electron Mobility in Suspended Graphene[J].Solid State Communications,2008,146:351-355
[5] Wang F,Zhang Y,Tian C,et al.Gate-Variable Optical Transitions in Graphene[J].Science,2008,5873(320):206-209
[6] Nair R R,Blake P,Grigorenko A N,et al.Fine Structure Constant Defines Visual Transparency of Graphene[J].Science,2008,320(5881):1308-1308
[7] Konstantatos G,Badioli M,Gaudreau L,et al.Hybrid Graphene-Quantum Dot Phototransistors with Ultrahigh Gain[J].Nature Nanotechnology,2012,1038(10):363-368
[8] Zhang B Y,Liu T,Meng B,et al.Broadband High Photoresponse From Pure Monolayer Graphene Photodetector[J].Nature Communications,2013,4(1):1-11
[9] 薛玉雄,杨生胜,把得东,等.空间辐射环境诱发航天器故障或异常分析[J].真空与低温,2012,18(2):63-70
[10] 何宝平,陈伟,王桂珍.CMOS 器件 60Coγ射线,电子和质子电离辐射损伤比较[J].物理学报,2006,55(7):3546-3551
[11] Ferrari A C.Raman Spectroscopy of Graphene and Graphite:Disorder,Electron-Phonon Coupling,Doping and Nonadiabatic Effects[J].Solid State Communications,2007,143(1-2):47-57
[12] Mafra D L,Kong J,Sato K,et al.Using Gate-Modulated Raman Scattering and Electron-Phonon Interactions to Probe Single-Layer Graphene:A Different Approach to Assign Phonon Combination Modes[J].Physical Review B,2012,86(19):1-9
[13] Costa S,Tripisciano C,Borowiak-Palen E,et al.Comparative Study on Purity Evaluation of Singlewall Carbon Nanotubes[J].Energy Conversion and Management,2008,49(9):2490-2493
[14] Ferrari A C,Basko D M.Raman Spectroscopy as a Versatile Tool for Studying the Properties of Graphene[J].Nature Nanotechnology,2013,8(4):235-246
[15] Li X,Cai W,An J,et al.Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils[J].Science,2009,324(5932):1312-1314
[16] Jung N,Kim N,Jockusch S,et al.Charge Transfer Chemical Doping of Few Layer Graphenes:Charge Distribution and Band Gap Formation[J].Nano Letters,2009,9(12):4133-4137
[17] Kim J H,Hwang J H,Suh J,et al.Work Function Engineering of Single Layer Graphene by Irradiation-Induced Defects[J].Applied Physics Letters,103(17):1-5
[18] Ochedowski O,Kleine Bussmann B,Ban d'Etat B,et al.Manipulation of the Graphene Surface Potential by Ion Irradiation[J].Applied Physics Letters,2013,102(15):1-4
[19] Canado L G,Jorio A,Ferreira E H M,et al.Quantifying Defects in Graphene via Raman Spectroscopy at Different Excitation Energies[J].Nano Letters,2011,11(8):3190-3196