1200V碳化硅MOSFET设计
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摘要
设计了一种阻断电压大于1 200V的碳化硅(SiC)MOSFET器件。采用有限元仿真的方法对器件的终端电场分布进行了优化。器件采用12μm厚、掺杂浓度为6e15cm-3的N型低掺杂区。终端保护结构采用保护环结构。栅压20V、漏压2V时,导通电流大于13A,击穿电压达1 900V。
A SiC MOSFET with breakdown voltage higher than 1 200 Vhas been successfully designed and fabricated.Numerical simulations have been performed to optimize the electric field distribution of the edge termination.The light doped N-type epilayer was 12μm thick with a doping concentration of 6e15cm-3.The MOSFET was fabricated using a floating guard rings edge termination.The drain current Idis larger than 13 Aat Vg=20Vand Vd=2V,and the breakdown voltage is higher than 1 900 V.
A SiC MOSFET with breakdown voltage higher than 1 200 Vhas been successfully designed and fabricated.Numerical simulations have been performed to optimize the electric field distribution of the edge termination.The light doped N-type epilayer was 12μm thick with a doping concentration of 6e15cm-3.The MOSFET was fabricated using a floating guard rings edge termination.The drain current Idis larger than 13 Aat Vg=20Vand Vd=2V,and the breakdown voltage is higher than 1 900 V.
引文
[1]Robert S Howell,Steven Buchoff,Stephen Van Campen,et al.A 10-kV large-area 4H-SiC power DMOSFET with stable subthreshold behavior independent of temperature[J].Transactions on Electron Devices,2008,55(8):1807-1815.
[2]Sei-Hyung Ryu,Sumi Krishnaswami,Brett Hull,et al.10kV,5A 4H-SiC power DMOSFET[C].Proceedings of the 18th International Symposium on Power Semiconductor Devices&IC′s,2006:1-4.
[3]Hatakeyama T,Suzuki T,Ichinoseki K,et al.Impact of oxidation conditions and surface defects on the reliability of large-area gate oxide on the C-face of 4H-SiC[C].Materials Science Forum,2010:799-804.
[4]Grieb M,Noborio M,Peters D,et al.Electrical characterization of MOS structures with deposited oxides annealed in N2O or NO[C].Materials Science Forum,2009:521-524.
[5]Ryoji Kosugi,Kenji Fukudab,Kazuo Arai.High temperature rapid thermal oxidation and nitridation of 4H-SiC in diluted N2O and NO ambient[C].Materials Science Forum,2005:669-672.
[6]Wang W,Banerjee S,Chow T P,et al.Interface properties of 4H-SiC/SiO2 with MOS capacitors and FETs annealed in O2,N2O,NO and CO2[C].Materials Science Forum,2004:1309-1312.
[7]Mrinal K Das,Brett A Hull,Sumi Krishnaswami,et al.Improved 4H-SiC MOS interfaces produced via two independent processes:Metal enhanced oxidation and1300oC NO anneal[C].Materials Science Forum,2006:967-970.
[8]Palmour J W,Cheng L,Pala V.Silicon carbide power MOSFETs:Breakthrough performance from 900V up to 15kV[C].Proceedings of the 26th International Symposium on Power Semiconductor Devices&IC's,2014:79-82.
[9]黄润华,陶永洪,柏松,等.1700V碳化硅MOSFET研究[J].固体电子学研究与进展,2014,24(6):510-513.
[2]Sei-Hyung Ryu,Sumi Krishnaswami,Brett Hull,et al.10kV,5A 4H-SiC power DMOSFET[C].Proceedings of the 18th International Symposium on Power Semiconductor Devices&IC′s,2006:1-4.
[3]Hatakeyama T,Suzuki T,Ichinoseki K,et al.Impact of oxidation conditions and surface defects on the reliability of large-area gate oxide on the C-face of 4H-SiC[C].Materials Science Forum,2010:799-804.
[4]Grieb M,Noborio M,Peters D,et al.Electrical characterization of MOS structures with deposited oxides annealed in N2O or NO[C].Materials Science Forum,2009:521-524.
[5]Ryoji Kosugi,Kenji Fukudab,Kazuo Arai.High temperature rapid thermal oxidation and nitridation of 4H-SiC in diluted N2O and NO ambient[C].Materials Science Forum,2005:669-672.
[6]Wang W,Banerjee S,Chow T P,et al.Interface properties of 4H-SiC/SiO2 with MOS capacitors and FETs annealed in O2,N2O,NO and CO2[C].Materials Science Forum,2004:1309-1312.
[7]Mrinal K Das,Brett A Hull,Sumi Krishnaswami,et al.Improved 4H-SiC MOS interfaces produced via two independent processes:Metal enhanced oxidation and1300oC NO anneal[C].Materials Science Forum,2006:967-970.
[8]Palmour J W,Cheng L,Pala V.Silicon carbide power MOSFETs:Breakthrough performance from 900V up to 15kV[C].Proceedings of the 26th International Symposium on Power Semiconductor Devices&IC's,2014:79-82.
[9]黄润华,陶永洪,柏松,等.1700V碳化硅MOSFET研究[J].固体电子学研究与进展,2014,24(6):510-513.