SnS同质结太阳电池中的光生载流子产生、复合和输运机制研究
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摘要
通过理论模拟深入研究了SnS同质结太阳电池中的光生载流子产生、复合和输运机制。本文分别采用AMPS软件中的寿命模式和俘获截面模式研究了光生载流子产生和复合;在俘获截面模式的模拟中重点讨论了分立能级和Gaussian能级的复合对电池性能的影响。本文还对电池的光照非平衡态能带结构、内建电场分布和电流输运情况进行了对比分析。
In this work the generation,recombination and transport of photo-carriers in SnS homojunction solar cells are studied by numerical simulation.The lifetime model and capture cross section model in AMPS are adopted to study the generation and recombination of photo-carriers;in the capture cross section model we mainly focus on the analyses and discussions of the recombination effects of discrete levels and Gaussian levels on the performance of solar cells.In addition,the band structure under illumination,built-in electric filed and current density distribution are studied.
In this work the generation,recombination and transport of photo-carriers in SnS homojunction solar cells are studied by numerical simulation.The lifetime model and capture cross section model in AMPS are adopted to study the generation and recombination of photo-carriers;in the capture cross section model we mainly focus on the analyses and discussions of the recombination effects of discrete levels and Gaussian levels on the performance of solar cells.In addition,the band structure under illumination,built-in electric filed and current density distribution are studied.
引文
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[7]Shuo Lin,Xirong Li.Huaqing Pan,et al.Numerical analysis of SnS homojunction solar cell[J].Superlattice Microst.,2016,91:375-382.
[8]Fonash S,et al.http://www.ampsmodeling.org/default.htm and:A manual for AMPS-1D.
[9]Gao C,Shen H,Sun L.Preparation and properties of zinc blende and orthorhombic SnS films by chemical bath deposition[J].Applied Surface Science,2011,257:6750-6755.
[10]Vidal J,Lany S,dAvezac M,et al.Band-structure,optical properties,and defect physics of the photovoltaic semiconductor SnS[J].Appl.Phys.Lett.,2012,100:032104.
[11]Sugiyama M,Reddy K T R,Revathi N,et al.Band offset of SnS solar cell structure measured by X-ray photoelectron spectroscopy[J].Thin Solid Films,2011,519:7429-7431.
[12]Ramakrishna K T,Koteswara Reddy N,Miles R W.Photovoltaic properties of SnS based solar cells[J].Sol.Energ.Mater.Sol.Cells,2006,90:3041-3046.
[13]Warrier A R,Sajeesh T H,Kartha C S,et al.Determination of thermal and electronic carrier transport properties of SnS thin films using photothermal beam deflection technique[J].Materials Research Bulletin,2012,47:3758-3763.
[14]Cheng S,Chen Y,Huang C,et al.Characterization of SnS films prepared by constant-current electro-deposition[J].Thin Solid Films,2006,500:96-100.
[15]Jaramillo R,Sher M-J,Ofori-Okai B K,et al.Transient terahertz photoconductivity measurements of minority-carrier lifetime in tin sulfide thin films:Advanced metrology for an early-stage photovoltaic material.arXiv:1511.07887.
[2]Ray S C,Karanjai M K,DasGupta D.Structure and photoconductive properties of dip-deposited SnS and SnS2thin films and their conversion to tin dioxide by annealing in air[J].Thin Solid Films,1999,350:72-78.
[3]Sinsermsuksakul P,Sun L,Lee SW,et al.Overcoming efficiency limitations of SnS-based solar cells[J].Adv.Energy Mater.,2014,4:1400496.
[4]Sanchez-Juarez A,Tiburcio-Silver A,Ortiz A.Fabrication of SnS2/SnS heterojunction thin film diodes by plasma-enhanced chemical vapor deposition[J].Thin Solid Films,2005,480-481:452-456.
[5]Sinsermsuksakul P,Hartman K,Kim SB,et al.Enhancing the efficiency of SnS solar cells via band-offset engineering with a zinc oxysulfide buffer layer[J].Appl.Phys.Lett.,2013,102:053901.
[6]Ghosh B,Das M,Banerjee P,et al.Fabrication of the SnS/ZnO heterojunction for PV applications using electrodeposited ZnO films[J].Semicond.Sci.Technol.,2009,24:025024.
[7]Shuo Lin,Xirong Li.Huaqing Pan,et al.Numerical analysis of SnS homojunction solar cell[J].Superlattice Microst.,2016,91:375-382.
[8]Fonash S,et al.http://www.ampsmodeling.org/default.htm and:A manual for AMPS-1D.
[9]Gao C,Shen H,Sun L.Preparation and properties of zinc blende and orthorhombic SnS films by chemical bath deposition[J].Applied Surface Science,2011,257:6750-6755.
[10]Vidal J,Lany S,dAvezac M,et al.Band-structure,optical properties,and defect physics of the photovoltaic semiconductor SnS[J].Appl.Phys.Lett.,2012,100:032104.
[11]Sugiyama M,Reddy K T R,Revathi N,et al.Band offset of SnS solar cell structure measured by X-ray photoelectron spectroscopy[J].Thin Solid Films,2011,519:7429-7431.
[12]Ramakrishna K T,Koteswara Reddy N,Miles R W.Photovoltaic properties of SnS based solar cells[J].Sol.Energ.Mater.Sol.Cells,2006,90:3041-3046.
[13]Warrier A R,Sajeesh T H,Kartha C S,et al.Determination of thermal and electronic carrier transport properties of SnS thin films using photothermal beam deflection technique[J].Materials Research Bulletin,2012,47:3758-3763.
[14]Cheng S,Chen Y,Huang C,et al.Characterization of SnS films prepared by constant-current electro-deposition[J].Thin Solid Films,2006,500:96-100.
[15]Jaramillo R,Sher M-J,Ofori-Okai B K,et al.Transient terahertz photoconductivity measurements of minority-carrier lifetime in tin sulfide thin films:Advanced metrology for an early-stage photovoltaic material.arXiv:1511.07887.