模块化多电平换流阀IGBT器件功率损耗计算与结温探测
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  • 英文篇名:Power Loss Calculation and Junction Temperature Detection of IGBT Devices for Modular Multilevel Valve
  • 作者:王希平 ; 李志刚 ; 姚芳
  • 英文作者:Wang Xiping;Li Zhigang;Yao Fang;State Key Laboratory of Reliability and Intelligence of Electrical Equipment School of Electrical Engineering Hebei University of Technology;Key Laboratory of Electromagnetic Field and Electrical Apparatus Reliability of Hebei Province School of Electrical Engineering Hebei University of Technology;
  • 关键词:模块化多电平换流阀 ; 半桥子模块 ; 功率损耗 ; 结温探测 ; 电热耦合模型
  • 英文关键词:Modular multilevel converter;;half-bridge sub-module;;power loss;;Junction temperature detection;;electro-thermal coupling model
  • 中文刊名:DGJS
  • 英文刊名:Transactions of China Electrotechnical Society
  • 机构:省部共建电工装备可靠性与智能化国家重点实验室(河北工业大学电气工程学院);河北省电磁场与电器可靠性重点实验室(河北工业大学电气工程学院);
  • 出版日期:2018-12-14 15:10
  • 出版单位:电工技术学报
  • 年:2019
  • 期:v.34
  • 基金:国家科技支撑计划(2015BAA09B01);; 国家自然科学基金(51377044);; 河北省自然科学基金重点项目(E2017202284)资助
  • 语种:中文;
  • 页:DGJS201908009
  • 页数:11
  • CN:08
  • ISSN:11-2188/TM
  • 分类号:82-92
摘要
半桥子模块是柔性直流输电系统中模块化多电平换流阀(MMC)的核心单元,根据运行工况参数计算半桥子模块器件的功率损耗是进行绝缘栅双极晶体管(IGBT)模块结温探测的关键,准确的结温波动信息对MMC换流阀系统的可靠性研究和安全运行尤为重要。与一般的两电平逆变器不同,MMC系统中桥臂电流具有与生俱来的直流偏置特性。该文提出了一种基于电热耦合模型的半桥子模块中IGBT器件功率损耗与瞬态结温计算的数学解析方法。首先研究半桥子模块中各导通器件电流复现方法,建立基于开关周期的平均功率损耗计算模型,基于瞬态热阻抗建立半桥子模块中IGBT器件的热网络模型;然后通过一个2MW的柔性直流输电系统算例,计算子模块中上下管开关器件的功率损耗和瞬态结温变化,计算速度是时域仿真模型的1 000倍;最后通过有限元模型验证了文中所提电热耦合模型的有效性。
        Half-bridge sub-module is the core unit of the modular multilevel converter(MMC) in the flexible dc transmission system.It is of great importance to accurately calculate the power loss of IGBT devices in sub-module for the junction temperature detection of insulated gated bipolar transistor(IGBT) under the operating conditions.And the estimation of the temperature swings is the essential for reliability study and safety of the MMC.Different from two-level power converters,the MMC has inherent dc-bias in arm current.Consequently,a analytical thermal modeling method is proposed based on electro-thermal coupling in this paper.The device current reconstruction method was studied for sub-module and the average loss calculation model was constructed based on switch cycle.Based on transient thermal impedance,the thermal network model of sub-module was established to calculate the junction temperature of IGBT devices.The power loss and transient temperature change of the power devices were calculated under operating parameters with a case study on a 2 MW MMC system.More importantly,the speed of calculation is 1 000 times than time-domain simulation.The FEM model is used to verify the validity of the proposed electro-thermal coupling model.
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