固结金刚石研磨盘加工蓝宝石基片的磨削性能研究
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摘要
通过蓝宝石基片磨削试验研究了陶瓷结合剂、树脂结合剂和陶瓷树脂复合结合剂制备的固结金刚石研磨盘磨削工件的材料去除率、表面粗糙度和磨盘自锐性能,确定了磨削性能最佳的金刚石研磨盘结合剂,在此基础上,进一步研究了W40、W20、W7和W2.5金刚石研磨盘磨削蓝宝石基片的材料去除率、表面粗糙度、表面/亚表面损伤及其材料去除机理,提出依次采用W40金刚石研磨盘粗磨、W7金刚石研磨盘半精磨和W2.5金刚石研磨盘精磨的蓝宝石基片高效低损伤磨削新工艺。结果表明,陶瓷树脂复合结合剂制备的固结金刚石研磨盘磨削蓝宝石基片的综合性能最好,随着磨料粒径的减小,磨削蓝宝石基片的表面材料去除方式从脆性断裂去除向塑性流动去除转变,同时蓝宝石基片的材料去除率、表面粗糙度和亚表面损伤深度也随之减小。
The material removal rate,surface roughness and self-sharpening ability induced by diamond lapping plates with different bonds of vitrified,resin and vitrified-resin composite in sapphire wafer lapping were investigated first and the best bond of diamond lapping plate was proposed.Based on the result,the material removal rate,surface roughness,surface/subsurface damage and material removal mechanism of sapphire substrates ground by diamond lapping plates with different grain sizes of W40,W20,W7 and W2.5 were further studied.A new high efficiency and low damage lapping process of sapphire substrates was proposed by stages using W40,W7 and W2.5 diamond lapping plate,respectively.The results show that the diamond lapping plate with vitrified-resin composite bond exhibit better grinding performance than another two diamond lapping plates with vitrified and resin bonds.As the decreased in grain size of the diamond lapping plate,the removal mode of ductile regime exhibited more than brittle fracture and the MRR,surface roughness and subsurface damage depth of the ground sapphire substrate obviously decreases.
The material removal rate,surface roughness and self-sharpening ability induced by diamond lapping plates with different bonds of vitrified,resin and vitrified-resin composite in sapphire wafer lapping were investigated first and the best bond of diamond lapping plate was proposed.Based on the result,the material removal rate,surface roughness,surface/subsurface damage and material removal mechanism of sapphire substrates ground by diamond lapping plates with different grain sizes of W40,W20,W7 and W2.5 were further studied.A new high efficiency and low damage lapping process of sapphire substrates was proposed by stages using W40,W7 and W2.5 diamond lapping plate,respectively.The results show that the diamond lapping plate with vitrified-resin composite bond exhibit better grinding performance than another two diamond lapping plates with vitrified and resin bonds.As the decreased in grain size of the diamond lapping plate,the removal mode of ductile regime exhibited more than brittle fracture and the MRR,surface roughness and subsurface damage depth of the ground sapphire substrate obviously decreases.
引文
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[2]Dobrovinskaya E R,Lytvynov L,Pishchik V.Sapphire:Material,Manufacturing,Applications[M].Berlin:Springer Science&Business Media,2009.
[3]Fletcher T D,Dronen B,Gobena F T,et al.Fixed Abrasive Flat Lapping with 3M(TM)Trizact(TM)Diamond Tile Abrasive Pads[Z].Optifab,2003.
[4]Fletcher T D,Gobena F T,Romero V D.Diamond Fixed Abrasive Lapping of Brittle Substrates[C].Optical Society of America,2004.
[5]Gagliardi J J,Kim D,Sokol J J,et al.A Case for 2-Body Material Removal in Prime LED Sapphire Substrate Lapping and Polishing[J].Journal of Manufacturing Processes,2013,15(3):348-354.
[6]Kim H M,Manivannan R,Moon D J,et al.Evaluation of Double Sided Lapping Using a Fixed Abrasive Pad for Sapphire Substrates[J].Wear,2013,302(s1-2):1340-1344.
[7]Kim H M,Park G H,Seo Y G,et al.Comparison Between Sapphire Lapping Processes Using 2-Body and 3-Body Modes as a Function of Diamond Abrasive Size[J].Wear,2015,332:794-799..
[8]李鹏鹏,李军,王建彬,等.固结磨料研磨蓝宝石衬底的工艺研究[J].人工晶体学报,2013,42(11):2258-2264.
[9]王建彬,朱永伟,王加顺,等.研磨方式对单晶蓝宝石亚表面损伤层深度的影响[J].人工晶体学报,2014,43(5):1099-1104.
[10]王建彬,朱永伟,谢春祥,等.固结磨料研磨蓝宝石单晶过程中研磨液的作用[J].光学精密工程,2014,22(11):3004-3011.
[11]王建彬,朱永伟,居志兰,等.乙二醇对固结磨料研磨蓝宝石晶圆的影响[J].华南理工大学学报(自然科学版),2014,42(11):25-30.
[12]高尚,康仁科,董志刚,等.工件旋转法磨削硅片的亚表面损伤分布[J].机械工程学报,2013,49(3):88-94.
[13]Kumar P,Lee J,Lee G,et al.Low Temperature Wet Etching to Reveal Sub-Surface Damage in Sapphire Substrates[J].Applied Surface Science,2013,273:58-61.