摘要
为在龙江地区粳稻生产中科学合理用肥,降低水稻的倒伏风险,以龙庆稻1号为供试材料,在不同氮肥施入梯度下,研究硅钾肥共同作用对水稻茎秆基部节间结构特征和抗倒伏能力的影响。结果表明:当钾元素单独作用时,钾肥施入量与茎秆I1、I2、I3节间抗折力呈正相关,钾肥施入量为150kg·hm~(-2)时(N1K2),钾元素利用率最高,I1、I2、I3节间抗折力较对照(N1K0)分别提高9.86%、10.14%、13.24%,当硅元素单独作用时,硅肥施入量与I1、I2茎秆节间抗折力呈显著正相关,对I3节间影响不显著,当硅肥施入量为150kg·hm~(~(-2))时(N1S3),对I1、I2节间抗折力提升最为显著,分别较对照(N1S0)提高15.26%、19.69%。氮钾硅肥共同作用时,当氮肥施入量为100kg·hm~(-2),N1K3S1的硅钾元素利用率最高,I1、I2节间抗折力较对照分别提高13.43%、26.27%,当氮肥施入量为200、250kg·hm~(-2),N2K1S3和N3K1S3的硅钾元素利用率最高,I1、I2节间抗折力较对照分别提高10.72%、12.20%、16.76%、10.43%。
In order to use fertilizer scientifically and rationally for the production of japonicarice in longjiang region,and reduce rice lodging risk.Taking Longqingdao 1as material,the effect of different amounts of potassium and silicon fertilizer on the features of stalk basal internode structure and lodging resistance was studied under the gradient of different nitrogen fertilizer application.The results showed that when the potassium element alone,the amount of K was positively correlated to stem internode resistance of I1,I2 and I3.When the amount of potassium fertilizer was 150kg·hm~(-2)(N1K2),the utilization rate of potassium was the highest,breaking resistance of basal internode I1,I2 and I3were increased by 9.86%,10.14% and 13.24% respectively compared with the control group(N1K0).When the silicon element alone,breaking resistance of basal internode I1 and I2was positively correlated with silicon fertilizer application amount,no significant effect on I3,when the silicon fertilizer application quantity was 150kg·hm~(-2)(N1S3),breaking resistance of basal internode I1 and I2was the most significant improvement,increased 15.26% and 19.69% compared with the control group(N1S0).When the interaction of nitrogen silicon and potassium fertilizer,when the amount of nitrogen fertilizer was 100kg·hm~(-2),the highest utilization rate of silicon and potassium was N1K3S1,breaking resistance of basal internode I1 and I2were increased by 13.43%and 26.27%respectively compared with the control group,when the amount of nitrogen fertilizer was 200kg·hm~(-2) and 250kg·hm~(-2),the highest utilization rate of silicon and potassium was N2K1S3 and N3 K1S3,breaking resistance of basal internode I1 and I2 were increased by10.72%,12.20%,16.76% and 10.43% respectively compared with the control group.
引文
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