晶闸管过零关断零电压介质恢复阻断影响因素的分析
详细信息    查看全文 | 推荐本文 |
  • 英文篇名:Analysis of Zero-Turn-Off Thyristor Zero Voltage Block Media Recovery Influencing Factors
  • 作者:方伟 ; 徐国顺 ; 王鸣光 ; 赵盼庆
  • 英文作者:FANG Wei;XU Guoshun;WANG Mingguang;ZHAO Panqing;College of Electrical Engineering,Naval University of Engineering;Changshu Ruite Electric Co.,Ltd.;
  • 关键词:晶闸管关断恢复 ; 强迫过零 ; 通流大小 ; 通流时间
  • 英文关键词:off thyristor recovery;;forced zero crossing;;size of the through-flow;;flow time
  • 中文刊名:DYDQ
  • 英文刊名:Electrical & Energy Management Technology
  • 机构:海军工程大学电气工程学院;常熟瑞特电气股份有限公司;
  • 出版日期:2017-03-30
  • 出版单位:电器与能效管理技术
  • 年:2017
  • 期:No.519
  • 基金:国家自然科学基金项目(51207166/51307179);; 海军工程大学自然科学基金项目(435517F21)
  • 语种:中文;
  • 页:DYDQ201706002
  • 页数:4
  • CN:06
  • ISSN:31-2099/TM
  • 分类号:14-17
摘要
为了分析晶闸管换流过零的暂态关断恢复特性影响因素,设计了晶闸管强迫过零关断后零电压恢复的试验电路。通过试验系统地研究了影响晶闸管暂态恢复时间的两个重要因素,并且就通流大小、通流时间对晶闸管恢复时间特性具体产生的影响做了详细的分析。分析结果表明,晶闸管通流幅值的增大与通流时间的增长均会对其恢复时间产生不利的影响。
        In arder to analyze the factors of transient zero through the thyristor turn-off characteristics of recovery,this paper presented the experimental circuit of thyristor forced through zero-zero-voltage shutdown recovery to study the effects of the thyristor transient recovery time.In respect of factors(the size of the throughflow,flow time) it analyzed the thyristor recovery time characteristics and the impact.The analyais results show that the thyristor through-flow growth and an increase in the magnitude of flow-through time will adversely affect their recovery time.
引文
[1]SARRO J D,ROSENBAUM E.A scalable SCR compact model for ESD circuit simulation[J].IEEE International Reliability Physics Symposium,2010,57(12):254-261.
    [2]胡雯,孙云莲,张巍.基于改进的自适应遗传算法的智能配电网重构研究[J].电力系统保护与控制,2013,41(23):85-90.
    [3]LOU L F,LIOU J J.An improved compact model of silicon-controlled rectifier(SCR)for electrostatic discharge(ESD)applications[J].IEEE transactions on electron devices,2008,55(12):3517-3524.
    [4]PHILIPP D,VOLKER B,SIGO S.ICCOS countercurrent-thyristor high-Power opening switch for currents up to 28k A[J].IEEE Trans.on Magnetics,2009,45(1):536-539.
    [5]杨大江,姚振华,朱长纯.新型功率器件(IGCT)的工作原理及其设计技术[J].电力电子技术,1999(5):55-57.
    [6]蓝元良,汤广福,印永华,等.串联晶闸管反向恢复暂态过程的研究[J].电网技术,2006,30(16):15-19.
    [7]CHESTER J.A new technique for deriving selfconsistent electrical and thermal models of thyristors during surge loops and experimental data[C]//IEE2007 Conference Publication,2007:154-158.
    [8]邹刚,陈祥训,郑健超,等.用于电力电子系统暂态过程分析的晶闸管宏模型[J].中国电机工程学报,1999,19(6):1-5.
    [9]张静,汤广福,温家良,等.高压大功率晶闸管反向恢复特性动态模型[J].电力电子技术,2015(4):56-59.
    [10]LIAO M F,DUAN X Y,CHENG X,et al.Dynamic Dielectric Recovery Property for Vacuum CircuitBreakers with Double Breaks[C]∥24th Int.Symp.on Discharges and Electrical Insulation in Vacuum,2010:225-228.
    [11]胡永雄,常忠廷,董意锋,等.基于LC振荡回路的晶闸管阀短路电流试验[J].电气技术,2016,17(4):152-154.
    [12]王晨,庄劲武,张晓锋,等.基于IGBT的新型直流电力系统限流装置的工作原理与实验研究[J].电工技术学报,2006,21(9):57-61.
    [13]孙媛媛,尹志明,郑伟杰.晶闸管可控电抗器的谐波产生特性研究[J].电工技术学报,2012,27(7):273-279.
    [14]王子建,何俊佳,尹小根,等.基于电磁斥力机构的10 k V快速真空开关[J].电工技术学报,2009,24(11):68-75.
    [15]ARABSHAHI M,NIAYESH K.Design of a Matrix Fault Current Limiter Using Low-power PTC Resistors[C]∥2011 10th International Conference on Environment and Electrical Engineering,2011:1-4.
    [16]GVD Z Y,SUN H G,BAI B Z,et al.Experiment and simulation of PTC used in fault current limiter[C]∥2010 China International Conference on Electricity Distribution,2010:1-9.
    [17]SONT X C,SHI Z Q,LIU C,et al.Experimental investigation on the characteristics of vacuum arc in the process of DC interruption based on artificial current zero[C]∥24th Int.Symp.on Discharges and Electrical Insulation in Vacuum,2010:293-296.
    [18]戴玲,董汉彬,林福昌.脉冲功率晶闸管的小型化[J].电工技术学报,2012,27(8):120-125.
    [19]刘仲,牟龙华,杨智豪.大停电后含分布式电源的电网分区及负荷恢复方案[J].电力系统保护与控制,2015,43(22):55-61.
    [20]王晨屹,赵毅,许傲然,等.微电网大功率IGBT变流器重触发问题的研究[J].电力电子技术,2016(12):77-79.
    [21]李文云,蒋亚坤,雷炳银,等.基于Multi-Agent系统的含分布式电源电网能源优化管理[J].电力系统保护与控制,2015,43(12):21-27.
    [22]孙鹏,张建华,罗明武,等.含规模化新能源的地区电网无功分层优化策略[J].电器与能效管理技术,2015(16):18-23,58.
    [23]郝勇,刘云霞,曾继伦.基于指数恢复模型的晶闸管阻容吸收参数设计[J].电气技术,2010,11(2):20-23.
    [24]ZOU G,CHEN X X,ZHENG J C,et al.Micro-macro PSPICE model of thyristor[J].∥Proceedings of the CSEE,2009,19(7):6-10,79.

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700