20kV固态Marx脉冲调制器研制
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摘要
阐述了20kV固态Marx脉冲调制器的设计原理、结构特点及驱动控制方法。该系统由8级模块串联而成,每级模块的储能电容、高压充电和固态开关驱动供电均采用高压硅堆隔离,Marx模块采用两只独立控制的高压绝缘栅双极型晶体管(insulated gate bipolar transistor,IGBT)对模块的储能电容实现充电和放电。IGBT驱动电路采用高压硅堆隔离供电、光纤传输触发脉冲和高性能IGBT驱动模块TD350设计构成。驱动电路具备完善的欠压、过流和过压保护功能。Marx模块采用插拔式结构,维护快捷简便。脉冲源在无强化散热措施条件下,输出方形高压脉冲幅度大于20kV,脉冲宽度为10μs,脉冲前后沿均为300ns,重复频率可达1kHz。
A 20 kV solid-state Marx pulse modulator is developed.The modulator is composed of eight-stage Marx modules in series,each of which adopts two independently controlled insulated gate bipolar transistors(ICBTs)for charging and discharging to its energy storage capacitor.It takes high voltage silicon stack for capacitor charging isolation and switch-driven isolation for each stage of the Marx module.With push/pull PCB structure,the Marx modules are easy to maintenance and replacement.Experimental results show that the 20 kV solid-state Marx modulator can generate output pulse with voltage more than 20 kV,pulse width of 10μs,raise/fall time of 300 ns at a load of 20kΩ.Without strengthen cool,the pulse repetition rate is up to 1kHz in burst mode.
A 20 kV solid-state Marx pulse modulator is developed.The modulator is composed of eight-stage Marx modules in series,each of which adopts two independently controlled insulated gate bipolar transistors(ICBTs)for charging and discharging to its energy storage capacitor.It takes high voltage silicon stack for capacitor charging isolation and switch-driven isolation for each stage of the Marx module.With push/pull PCB structure,the Marx modules are easy to maintenance and replacement.Experimental results show that the 20 kV solid-state Marx modulator can generate output pulse with voltage more than 20 kV,pulse width of 10μs,raise/fall time of 300 ns at a load of 20kΩ.Without strengthen cool,the pulse repetition rate is up to 1kHz in burst mode.
引文
[1]江伟华.高重复频率脉冲功率技术及其应用:(7)主要技术问题和未来发展趋势[J].强激光与粒子束,2015,27(1):010201.(JIANG Wei-hua.Repetition rate pulsed power technology and its application:(vii)Major challenges and future trends[J].High Power Laser and Particle Beams,2015,27(1):010201.)
[2]李洪涛,王传伟,王凌云,等.500kV全固态Marx发生器[J].强激光与粒子束,2012,24(4):917-920.(LI Hongtao,WANG Chuan-wei,WANG Ling-yun,et al.500kV allsolid-state Marx generator[J].High Power Laser and Particle Beams,2012,24(4):917-920).
[3]雷宇,邱剑,刘克富.150kV全固态高压脉冲发生器设计[J].强激光与粒子束,2012,24(3):673-677.(LEI Yu,QIU Jian,LIU Ke-fu.Design of 150kV all solid-state high voltage pulsed power generator[J].High Power Laser and Particle Beams,2012,24(3):673-677.)
[4]江伟华.高重复频率脉冲功率技术及其应用:(4)半导体开关的特长与局限性[J].强激光与粒子束,2013,25(3):537-543.(JIANG Wei-hua.Repetition rate pulsed power technology and its application:(iv)Advantage and limitation of semiconductor switches[J].High Power Laser and Particle Beams,2013,25(3):537-543.)
[5]DULAU L,PONTAROLLO S,BOIMOND A,et al.A new gate driver integrated circuit for IGBT devices with advanced protections[J].IEEE Trans Power Electron,2006,21(1):38-41.
[6]Advanced IGBT/MOSFET driver:TD350E[EB/OL].[2013-01]http://www.st.com.
[2]李洪涛,王传伟,王凌云,等.500kV全固态Marx发生器[J].强激光与粒子束,2012,24(4):917-920.(LI Hongtao,WANG Chuan-wei,WANG Ling-yun,et al.500kV allsolid-state Marx generator[J].High Power Laser and Particle Beams,2012,24(4):917-920).
[3]雷宇,邱剑,刘克富.150kV全固态高压脉冲发生器设计[J].强激光与粒子束,2012,24(3):673-677.(LEI Yu,QIU Jian,LIU Ke-fu.Design of 150kV all solid-state high voltage pulsed power generator[J].High Power Laser and Particle Beams,2012,24(3):673-677.)
[4]江伟华.高重复频率脉冲功率技术及其应用:(4)半导体开关的特长与局限性[J].强激光与粒子束,2013,25(3):537-543.(JIANG Wei-hua.Repetition rate pulsed power technology and its application:(iv)Advantage and limitation of semiconductor switches[J].High Power Laser and Particle Beams,2013,25(3):537-543.)
[5]DULAU L,PONTAROLLO S,BOIMOND A,et al.A new gate driver integrated circuit for IGBT devices with advanced protections[J].IEEE Trans Power Electron,2006,21(1):38-41.
[6]Advanced IGBT/MOSFET driver:TD350E[EB/OL].[2013-01]http://www.st.com.