自旋轨道耦合与自旋霍尔效应
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摘要
从巨磁阻效应正式拉开自旋电子学的序幕开始,如何控制和操纵电子的自旋自由度在学术界和工业界掀起了巨大的研究浪潮,如何产生并测量自旋流也是自旋电子学面临的重大挑战.自旋轨道耦合为自旋电子学提供了利用全电学来控制自旋的物理基础,由自旋轨道耦合引起的自旋霍尔效应则为自旋电子学提供了产生较大纯自旋流的方法.本文从1879年Edwin Hall发现的那个迷人的效应谈起,同时从自旋轨道耦合的起源来认识自旋霍尔效应,进一步探讨了如何利用其逆效应来探测自旋霍尔效应及自旋流,并简单总结了与自旋霍尔效应相关的部分新效应及新应用.
Since spintronics was formally started by giant magnetoresistance effect,how to control and manipulate spin degree of freedom has induced a giant wave of research in both academia and industry,and how to generate and measure spin current is a huge challenge in spintronics.Fortunately,spin orbit coupling offers certain physics basis which fully controls spin by electricity,spin Hall effect induced by spin orbit coupling can generate giant spin current.In the present paper,the charming effect found by Edwin Hall in 1879 is discussed;attempts are made to understand spin Hall effect through the origin of spin orbit coupling.How to measure spin Hall effect itself and spin current by its inverse effect is discussed.Finally several new effects and applications relative to spin Hall effect are briefly introduced.
Since spintronics was formally started by giant magnetoresistance effect,how to control and manipulate spin degree of freedom has induced a giant wave of research in both academia and industry,and how to generate and measure spin current is a huge challenge in spintronics.Fortunately,spin orbit coupling offers certain physics basis which fully controls spin by electricity,spin Hall effect induced by spin orbit coupling can generate giant spin current.In the present paper,the charming effect found by Edwin Hall in 1879 is discussed;attempts are made to understand spin Hall effect through the origin of spin orbit coupling.How to measure spin Hall effect itself and spin current by its inverse effect is discussed.Finally several new effects and applications relative to spin Hall effect are briefly introduced.
引文
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[2]Prinz G A.Magnetoeletronics[J].Science,1998,282:1660
[3]Zutic I,Fabian J,Das Sarma S.Spintronics:fundamentals and applications[J].Review of Modern Physics,2004,76:323
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[6]Dyakonov M I,Perel V I.Possibility of orienting electron spins with current[J].Soviet Physics JETP Lett,1971,13:467
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[10]Manchon A,Koo H C,Nitta J,et al.New perspectives for Rashba spin-orbit coupling[J].Nature Materials,2015,14:871
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[12]Bychkov Y A,Rashba E I.Oscillatory effects and the magnetic susceptibility of carriers in inversion layers[J].Journal of Physics C:Solid State Physics,1984,17(33):6039
[13]Nitta J,Akazaki T,Takayanagi H,et al.Gate control of spin-orbit interaction in an InAs-inserted In 0.53Ga0.47 As/In 0.52 Al 0.48 As heterostructure[J].Physica E:Low-dimensional Systems and Nanostructures,1998,2(1):527
[14]Varykhalov A,Marchenko D,Scholz M R,et al.Ir(111)surface state with giant Rashba splitting persists under graphene in air[J].Physical Review Letters,2012,108(6):066804
[15]Hall E H.On a new action of the magnet on electric currents[J].American Journal of Mathematics,1879,2(3):287
[16]Inoue J,Ohno H.Taking the Hall effect for a spin[J].Science,2005,309(5743):2004
[17]Hall E H.On the new action of magnetism on a permanent electric current[J].American Journal of Science,1880(117):16
[18]Nagaosa N,Sinova J,Onoda S,et al.Anomalous Hall effect[J].Reviews of Modern Physics,2010,82(2):1539
[19]Smit J.The spontaneous Hall effect in ferromagnetics I[J].Physica,1955,21(6):877
[20]Smit J.The spontaneous Hall effect in ferromagnetics II[J].Physica,1958,24(1/2/3/4/5):39
[21]Berger L.Side-jump mechanism for the Hall effect of ferromagnets[J].Physical Review B,1970,2(11):4559
[22]Jungwirth T,Niu Q,MacDonald A H.Anomalous Hall effect in ferromagnetic semiconductors[J].Physical Review Letters,2002,88(20):207208
[23]Klitzing K,Dorda G,Pepper M.New method for highaccuracy determination of the fine-structure constant based on quantized Hall resistance[J].Physical Review Letters,1980,45(6):494
[24]Tsui D C,Stormer H L,Gossard A C.Twodimensional magnetotransport in the extreme quantum limit[J].Physical Review Letters,1982,48(22):1559
[25]Zhang Y B,Tan Y W,Stormer H L,et al.Experimental observation of the quantum Hall effect and Berry’s phase in graphene[J].Nature,2005,438:201
[26]Novoselov K S,Jiang Z,Zhang Y,et al.Roomtemperature quantum Hall effect in graphene[J].Science,2007,315(5817):1379
[27]Niimi Y,Kawanishi Y,Wei D H,et al.Giant spin Hall effect induced by skew scattering from bismuth impurities inside thin film CuBi alloys[J].Physical Review Letters,2012,109(15):156602
[28]Murakami S,Nagaosa N,Zhang S C.Dissipationless quantum spin current at room temperature[J].Science,2003,301(5638):1348
[29]Murakami S.Absence of vertex correction for the spin Hall effect in p-type semiconductors[J].Physical Review B,2004,69(24):241202
[30]Sinova J,Culcer D,Niu Q,et al.Universal intrinsic spin Hall effect[J].Physical Review Letters,2004,92(12):126603
[31]Kato Y K,Myers R C,Gossard A C,et al.Observation of the spin Hall effect in semiconductors.[J].Science,2004,306(5703):1910
[32]Wunderlich J,Kaestner B,Sinova J,et al.Experimental observation of the spin-Hall effect in a twodimensional spin-orbit coupled semiconductor system[J].Physical Review Letters,2005,94(4):047204
[33]Kane C L,Mele E J.Quantum spin Hall effect in graphene[J].Physical Review Letters,2005,95(22):226801
[34]Bernevig B A,Hughes T L,Zhang S C.Quantum spin Hall effect and topological phase transition in HgTe quantum wells[J].Science,2006,314(5806):1757
[35]Knig M,Wiedmann S,Brüne C,et al.Quantum spin Hall insulator state in HgTe quantum wells[J].Science,2007,318(5851):766
[36]Yu R,Zhang W,Zhang H J,et al.Quantized anomalous Hall effect in magnetic topological insulators[J].Science,2010,329(5987):61
[37]Chang C Z,Zhang J,Feng X,et al.Experimental observation of the quantum anomalous Hall effect in a magnetic topological insulator[J].Science,2013,340(6129):167
[38]Valenzuela S O,Tinkham M.Direct electronic measurement of the spin Hall effect[J].Nature,2006,442(7099):176
[39]Kimura T,Otani Y,Sato T,et al.Room-temperature reversible spin Hall effect[J].Physical Review Letters,2007,98(15):156601
[40]Saitoh E,Ueda M,Miyajima H,et al.Conversion of spin current into charge current at room temperature:Inverse spin-Hall effect[J].Applied Physics Letters,2006,88(18):182509
[41]Uchida K,Adachi H,An T,et al.Acoustic spin pumping:direct generation of spin currents from sound waves in Pt/Y3Fe5O12hybrid structures[J].Journal of Applied Physics,2012,111(5):053903
[42]Ando K,Morikawa M,Trypiniotis T,et al.Photoinduced inverse spin-Hall effect:conversion of light-polarization information into electric voltage[J].Applied Physics Letters,2010,96(8):082502
[43]Schmidt G,Ferrand D,Molenkamp L W,et al.Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor[J].Physical Review B,2000,62(8):R4790
[44]Miron I M,Gaudin G,Auffret S,et al.Current-driven spin torque induced by the Rashba effect in a ferromagnetic metal layer[J].Nature Materials,2010,9(3):230
[45]Miron I M,Garello K,Gaudin G,et al.Perpendicular switching of a single ferromagnetic layer induced by inplane current injection[J].Nature,2011,476(7359):189
[46]Liu L,Pai C F,Li Y,et al.Spin-torque switching with the giant spin Hall effect of tantalum[J].Science,2012,336(6081):555
[47]Liu L,Moriyama T,Ralph D C,et al.Spin-torque ferromagnetic resonance induced by the spin Hall effect[J].Physical Review Letters,2011,106(3):036601
[48]Haazen P P J,MurèE,Franken J H,et al.Domain wall depinning governed by the spin Hall effect[J].Nature Materials,2013,12(4):299
[2]Prinz G A.Magnetoeletronics[J].Science,1998,282:1660
[3]Zutic I,Fabian J,Das Sarma S.Spintronics:fundamentals and applications[J].Review of Modern Physics,2004,76:323
[4]Schmidt G,Ferrand D,Molenkamp L W,et al.Fundamentals obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor[J].Physical Review B,2000,62:R4790
[5]van Son P C,van Kempen H,Wyder P.Boundary resistance of the ferromagnetic-nonferromagnetic metal interface[J].Physical Review Letters,1987,58:2271
[6]Dyakonov M I,Perel V I.Possibility of orienting electron spins with current[J].Soviet Physics JETP Lett,1971,13:467
[7]Bakun A A,Zakharchenya B P,Rogachev A A,et al.Observation of a surface photocurrent caused by optical orientation of electrons in a semiconductor[J].JETP Lett,1984,40:1293
[8]Hirsch J E.Spin Hall effect[J].Physical Review Letters,1999,83:1834
[9]Zhang S.Spin Hall effect in the presence of spin diffusion[J].Physical Review Letters,2000,85:393
[10]Manchon A,Koo H C,Nitta J,et al.New perspectives for Rashba spin-orbit coupling[J].Nature Materials,2015,14:871
[11]Winkler R,Papadakis S J,De Poortere E P,et al.Spinorbit coupling in two-dimensional electron and hole systems[M].[S.l]:Springer,2003
[12]Bychkov Y A,Rashba E I.Oscillatory effects and the magnetic susceptibility of carriers in inversion layers[J].Journal of Physics C:Solid State Physics,1984,17(33):6039
[13]Nitta J,Akazaki T,Takayanagi H,et al.Gate control of spin-orbit interaction in an InAs-inserted In 0.53Ga0.47 As/In 0.52 Al 0.48 As heterostructure[J].Physica E:Low-dimensional Systems and Nanostructures,1998,2(1):527
[14]Varykhalov A,Marchenko D,Scholz M R,et al.Ir(111)surface state with giant Rashba splitting persists under graphene in air[J].Physical Review Letters,2012,108(6):066804
[15]Hall E H.On a new action of the magnet on electric currents[J].American Journal of Mathematics,1879,2(3):287
[16]Inoue J,Ohno H.Taking the Hall effect for a spin[J].Science,2005,309(5743):2004
[17]Hall E H.On the new action of magnetism on a permanent electric current[J].American Journal of Science,1880(117):16
[18]Nagaosa N,Sinova J,Onoda S,et al.Anomalous Hall effect[J].Reviews of Modern Physics,2010,82(2):1539
[19]Smit J.The spontaneous Hall effect in ferromagnetics I[J].Physica,1955,21(6):877
[20]Smit J.The spontaneous Hall effect in ferromagnetics II[J].Physica,1958,24(1/2/3/4/5):39
[21]Berger L.Side-jump mechanism for the Hall effect of ferromagnets[J].Physical Review B,1970,2(11):4559
[22]Jungwirth T,Niu Q,MacDonald A H.Anomalous Hall effect in ferromagnetic semiconductors[J].Physical Review Letters,2002,88(20):207208
[23]Klitzing K,Dorda G,Pepper M.New method for highaccuracy determination of the fine-structure constant based on quantized Hall resistance[J].Physical Review Letters,1980,45(6):494
[24]Tsui D C,Stormer H L,Gossard A C.Twodimensional magnetotransport in the extreme quantum limit[J].Physical Review Letters,1982,48(22):1559
[25]Zhang Y B,Tan Y W,Stormer H L,et al.Experimental observation of the quantum Hall effect and Berry’s phase in graphene[J].Nature,2005,438:201
[26]Novoselov K S,Jiang Z,Zhang Y,et al.Roomtemperature quantum Hall effect in graphene[J].Science,2007,315(5817):1379
[27]Niimi Y,Kawanishi Y,Wei D H,et al.Giant spin Hall effect induced by skew scattering from bismuth impurities inside thin film CuBi alloys[J].Physical Review Letters,2012,109(15):156602
[28]Murakami S,Nagaosa N,Zhang S C.Dissipationless quantum spin current at room temperature[J].Science,2003,301(5638):1348
[29]Murakami S.Absence of vertex correction for the spin Hall effect in p-type semiconductors[J].Physical Review B,2004,69(24):241202
[30]Sinova J,Culcer D,Niu Q,et al.Universal intrinsic spin Hall effect[J].Physical Review Letters,2004,92(12):126603
[31]Kato Y K,Myers R C,Gossard A C,et al.Observation of the spin Hall effect in semiconductors.[J].Science,2004,306(5703):1910
[32]Wunderlich J,Kaestner B,Sinova J,et al.Experimental observation of the spin-Hall effect in a twodimensional spin-orbit coupled semiconductor system[J].Physical Review Letters,2005,94(4):047204
[33]Kane C L,Mele E J.Quantum spin Hall effect in graphene[J].Physical Review Letters,2005,95(22):226801
[34]Bernevig B A,Hughes T L,Zhang S C.Quantum spin Hall effect and topological phase transition in HgTe quantum wells[J].Science,2006,314(5806):1757
[35]Knig M,Wiedmann S,Brüne C,et al.Quantum spin Hall insulator state in HgTe quantum wells[J].Science,2007,318(5851):766
[36]Yu R,Zhang W,Zhang H J,et al.Quantized anomalous Hall effect in magnetic topological insulators[J].Science,2010,329(5987):61
[37]Chang C Z,Zhang J,Feng X,et al.Experimental observation of the quantum anomalous Hall effect in a magnetic topological insulator[J].Science,2013,340(6129):167
[38]Valenzuela S O,Tinkham M.Direct electronic measurement of the spin Hall effect[J].Nature,2006,442(7099):176
[39]Kimura T,Otani Y,Sato T,et al.Room-temperature reversible spin Hall effect[J].Physical Review Letters,2007,98(15):156601
[40]Saitoh E,Ueda M,Miyajima H,et al.Conversion of spin current into charge current at room temperature:Inverse spin-Hall effect[J].Applied Physics Letters,2006,88(18):182509
[41]Uchida K,Adachi H,An T,et al.Acoustic spin pumping:direct generation of spin currents from sound waves in Pt/Y3Fe5O12hybrid structures[J].Journal of Applied Physics,2012,111(5):053903
[42]Ando K,Morikawa M,Trypiniotis T,et al.Photoinduced inverse spin-Hall effect:conversion of light-polarization information into electric voltage[J].Applied Physics Letters,2010,96(8):082502
[43]Schmidt G,Ferrand D,Molenkamp L W,et al.Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor[J].Physical Review B,2000,62(8):R4790
[44]Miron I M,Gaudin G,Auffret S,et al.Current-driven spin torque induced by the Rashba effect in a ferromagnetic metal layer[J].Nature Materials,2010,9(3):230
[45]Miron I M,Garello K,Gaudin G,et al.Perpendicular switching of a single ferromagnetic layer induced by inplane current injection[J].Nature,2011,476(7359):189
[46]Liu L,Pai C F,Li Y,et al.Spin-torque switching with the giant spin Hall effect of tantalum[J].Science,2012,336(6081):555
[47]Liu L,Moriyama T,Ralph D C,et al.Spin-torque ferromagnetic resonance induced by the spin Hall effect[J].Physical Review Letters,2011,106(3):036601
[48]Haazen P P J,MurèE,Franken J H,et al.Domain wall depinning governed by the spin Hall effect[J].Nature Materials,2013,12(4):299