多场耦合研究印制电路盲孔填铜
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摘要
盲孔填铜作为高密度互连印制电路板制造的关键技术,其填铜性能一直是电镀铜研究的热点。采用多物理场耦合的有限元方法讨论了印制电路盲孔填铜过程,探讨了镀液流场、电镀添加剂与盲孔形状对铜沉积过程的影响。数值模拟结果表明,孔内镀液的良好交换、添加剂的加入与倒梯形孔型的设计有利于实现盲孔铜的超等角沉积,填充性能大于80%。采用数值模拟方法研究电镀铜过程是行之有效的方法,对高密度互连板层间连接的研究具有一定的指导意义。
Copper electrodeposition of microvia acts as a crucial technology for high density interconnect printed circuit board manufacturing. Performance of microvia filling has always been a hot spot in the research of copper electrodeposition. Finite element method of multiphysics coupling was applied to discuss the process of microvia filling. The influences of electrolyte flow field,additives and the shape of microvia on copper electrodeposition were investigated. Numerical simulated results show that a good exchange of electrolyte inside the microvia,additives and the design of trapezoidal microvia are favorable for bottom-up filling of microvia.And the filling performance is greater than 80%. It is an effective method to study copper electrodeposition by numerical simulation.The conclusions play a guidance role in research on interlayer connection of high density inerconnect printed circuit board.
Copper electrodeposition of microvia acts as a crucial technology for high density interconnect printed circuit board manufacturing. Performance of microvia filling has always been a hot spot in the research of copper electrodeposition. Finite element method of multiphysics coupling was applied to discuss the process of microvia filling. The influences of electrolyte flow field,additives and the shape of microvia on copper electrodeposition were investigated. Numerical simulated results show that a good exchange of electrolyte inside the microvia,additives and the design of trapezoidal microvia are favorable for bottom-up filling of microvia.And the filling performance is greater than 80%. It is an effective method to study copper electrodeposition by numerical simulation.The conclusions play a guidance role in research on interlayer connection of high density inerconnect printed circuit board.
引文
[1]ABBASPOUR R,BROWN D K,BAKIR M S.Fabrication and electrical characterization of sub-micron diameter through-silicon via for heterogeneous three-dimensional integrated circuits[J].J M icromech M icroeng,2017,27(2):025011.
[2]XIAO H B,HE H,REN X Y,et al.Numerical modeling and experimental verification of copper electrodeposition for through silicon via(TSV)w ith additives[J].Microelectron Eng,2017,170:54-58.
[3]GAMBINO J P,ADDERLY S A,KNICKERBOCKER J U.An overview of through-silicon-via technology and manufacturing challenges[J].M icroelectron Eng,2015,135:73-106.
[4]HUANG D Z,SHEN L D,CHEN J S,et al.The influence of cathode surface velocity on friction aided jet electrodeposition[J].Trans Indian Inst M et,2014,67(3):351-357.
[5]MOFFAT T P,YANG L Y O.Accelerator surface phase associated w ith superconformal Cu electrodeposition[J].J Electrochem Soc,2010,157(4):D228-D241.
[6]KIM H C,CHOE S,CHO J Y,et al.Bottom-up filling of through silicon vias using galvanostatic Cu electrodeposition w ith the modified organic additives[J].J Electrochem Soc,2015,162(3):D109-D114.
[7]LU Y,CAO H Y,SUN Q,et al.Investigation of competitive adsorption betw een accelerator and suppressor in TSV copper electroplating[C]//2012 13th International Conference on Electronic Packaging Technology and High Density Packaging.NY,USA:IEEE,2012:434-437.
[8]冀林仙.基于多物理场耦合的印制电路电镀铜互连研究[D].成都:电子科技大学,2016.
[9]JI L X,WANG C,WANG S X,et al.An electrochemical model for prediction of microvia filling process[J].Trans Inst M et Finish,2016,94(1):49-56.
[10]JI L X,WANG C,WANG S X,et al.Multiphysics coupling simulation of RDE for PCB manufacturing[J].Circuit World,2015,41(1):20-28.
[11]冀林仙,聂合贤,苏世栋,等.基于多场耦合的旋转圆盘电极法研究酸性镀铜[J].电镀与涂饰,2017(9):437-444.
[12]HUANG S M,LIU C W,DOW W P.Effect of convection-dependent adsorption of additives on microvia filling in an acidic copper plating solution[J].J Electrochem Soc,2012,159(3):D135-D141.
[13]LAU J H,CHANG C.An overview of microvia technology[J].Circuit World,2000,26(2):22-32.
[14]MOFFAT T P,WHEELER D,EDELSTEIN M D,et al.Superconformal film grow th:mechanism and quantification[J].IBM J Res Dev,2005,49(1):19-36.
[2]XIAO H B,HE H,REN X Y,et al.Numerical modeling and experimental verification of copper electrodeposition for through silicon via(TSV)w ith additives[J].Microelectron Eng,2017,170:54-58.
[3]GAMBINO J P,ADDERLY S A,KNICKERBOCKER J U.An overview of through-silicon-via technology and manufacturing challenges[J].M icroelectron Eng,2015,135:73-106.
[4]HUANG D Z,SHEN L D,CHEN J S,et al.The influence of cathode surface velocity on friction aided jet electrodeposition[J].Trans Indian Inst M et,2014,67(3):351-357.
[5]MOFFAT T P,YANG L Y O.Accelerator surface phase associated w ith superconformal Cu electrodeposition[J].J Electrochem Soc,2010,157(4):D228-D241.
[6]KIM H C,CHOE S,CHO J Y,et al.Bottom-up filling of through silicon vias using galvanostatic Cu electrodeposition w ith the modified organic additives[J].J Electrochem Soc,2015,162(3):D109-D114.
[7]LU Y,CAO H Y,SUN Q,et al.Investigation of competitive adsorption betw een accelerator and suppressor in TSV copper electroplating[C]//2012 13th International Conference on Electronic Packaging Technology and High Density Packaging.NY,USA:IEEE,2012:434-437.
[8]冀林仙.基于多物理场耦合的印制电路电镀铜互连研究[D].成都:电子科技大学,2016.
[9]JI L X,WANG C,WANG S X,et al.An electrochemical model for prediction of microvia filling process[J].Trans Inst M et Finish,2016,94(1):49-56.
[10]JI L X,WANG C,WANG S X,et al.Multiphysics coupling simulation of RDE for PCB manufacturing[J].Circuit World,2015,41(1):20-28.
[11]冀林仙,聂合贤,苏世栋,等.基于多场耦合的旋转圆盘电极法研究酸性镀铜[J].电镀与涂饰,2017(9):437-444.
[12]HUANG S M,LIU C W,DOW W P.Effect of convection-dependent adsorption of additives on microvia filling in an acidic copper plating solution[J].J Electrochem Soc,2012,159(3):D135-D141.
[13]LAU J H,CHANG C.An overview of microvia technology[J].Circuit World,2000,26(2):22-32.
[14]MOFFAT T P,WHEELER D,EDELSTEIN M D,et al.Superconformal film grow th:mechanism and quantification[J].IBM J Res Dev,2005,49(1):19-36.