热蒸发多孔Si/SiO_2薄膜的光致发光特性研究
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摘要
本工作采用热蒸发法制备了多孔Si/SiO_2薄膜,利用拉曼、红外、XRD研究了薄膜的结构,SEM研究了表面形貌,使用光致发光(PL)谱对其发光特性进行了研究。结果表明,激发波长为325nm(2.88eV)时,样品的峰位分别在430nm(2.88eV)、441nm(2.81eV)、523nm(2.47eV)、554nm(2.24eV),激发波长为488nm时,峰位在570nm(2.18eV),采用施主态Si悬挂键≡Si 0位于2.81eV,受主态Si悬挂键≡Si-位于3.00eV处,引入SiOx(x小于2)和Si-O-Si缺陷态能级,能级分别为5.05eV和0.63eV,建立了Si/SiO_2薄膜的能隙态(EGS)模型,并讨论了其发光机制。
In this paper,porous Si/SiO_2 films were prepared on Si substrates by thermal evaporation deposition.At 325 nm laser excitation,four photoluminescence emission peaks of the films are observed corresponding to 430 nm(2.88 eV),441 nm(2.81 eV),523 nm(2.47 eV),554 nm(2.24 eV)respectively.At 488 nm laser excitation,one photoluminescence emission peak of the films is observed corresponding to 570 nm(2.18 eV).According to the PL spectrum obtained,it is suggested that the energy levels of≡Si 0(silicon dangling bonds of donor state),≡Si-(silicon dangling bonds of acceptor state),SiOx(x<2)and Si-O-Si defect states are2.81 eV,3.00 eV,5.05 eV and 0.63 eV respectively.Based on these results,the energy gap state(EGS)model of the porous amorphous Si/SiO_2 films is established and its luminescence mechanism is discussed.
In this paper,porous Si/SiO_2 films were prepared on Si substrates by thermal evaporation deposition.At 325 nm laser excitation,four photoluminescence emission peaks of the films are observed corresponding to 430 nm(2.88 eV),441 nm(2.81 eV),523 nm(2.47 eV),554 nm(2.24 eV)respectively.At 488 nm laser excitation,one photoluminescence emission peak of the films is observed corresponding to 570 nm(2.18 eV).According to the PL spectrum obtained,it is suggested that the energy levels of≡Si 0(silicon dangling bonds of donor state),≡Si-(silicon dangling bonds of acceptor state),SiOx(x<2)and Si-O-Si defect states are2.81 eV,3.00 eV,5.05 eV and 0.63 eV respectively.Based on these results,the energy gap state(EGS)model of the porous amorphous Si/SiO_2 films is established and its luminescence mechanism is discussed.
引文
1 Canham L T.Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers[J].Applied Physics Letters,1990,57(10):1046.
2 Wei D Y,Chen D Y,Han P G,et al.The structural and optical properties of nc-Si/SiO2 multilayers[J].Chinese Journal of Luminescence,2008,29(1):161.
3 Zhang P,Zhang X,Lu P,et al.Interface state-related linear and nonlinear optical properties of nanocrystalline Si/SiO2 multilayers[J].Applied Surface Science,2014,292(1):262.
4 Yang Q Y,Wang D X,Ding K,et al.Study on the cathodoluminescence of porous silicon film[J].Journal of Light Scattering,2010,22(4):395.
5 赵丽特,范东华,朱慧群,等.从热蒸发多孔氧化硅薄膜表面形貌研究其生长机理[J].材料导报:研究篇,2015,29(3):37.
6 Li D,Jiang Y,Zhang P,et al.The phosphorus and boron co-doping behaviors at nanoscale in Si nanocrystals/SiO2 multilayers[J].Applied Physics Letters,2017,110(23):19.
7 肖清华,屠海令.Si/SiGe异质结构的硅该层中应变对Raman谱特征的影响[J].光谱学与光谱分析,2005,25(5):719.
8 Cerdeira F,Cardona M.Effect of carrier concentration on the Raman frequencies of Si and Ge[J].Physical Review B,1972,5(4):1440.
9 Chen Q Y,Duan M Y,Zhou H P,et al.Photoluminescence of Si/SiNx/SiO2multilayers[J].Chinese Journal of Luminescence,2008,29(2):363.
10 罗志,林璇英,林舜辉,等.氢化非晶硅薄膜中氢含量及键合模式的红外分析[J].物理学报,2003,52(1):169.
11 赵妙,周代兵,谭满清,等.双源电子束蒸发制备Si/SiO2光学薄膜的工艺[J].半导体学报,2006,27(9):1586.
12 郭亨群,林赏心,王启明.纳米Si镶嵌SiO2薄膜的发光与非线性光学特性的应用[J].半导体学报,2006,27(2):345.
13 陈青云,徐明,段满益,等.Si/SiO2和SiNx/SiO2多层膜的室温光致发光[J].半导体光电,2007,28(5):680.
14 刘宁宁,孙甲明,潘少华,等.非晶Si/SiO2超晶格的制备及其光谱研究[J].物理学报,2000,45(5):1019.
15 秦艳,张晓娜,郑坤,等.非晶SiO2纳米线的合成及其显微结构和光学性质的研究[J].电子显微学报,2008,27(2):102.
16 Rinnert H,Vergnat M.Influence of the barrier thickness on the photoluminescence properties of amorphous Si/SiO multilayers[J].Journal of Luminescence,2005,113(1-2):64.
17 Jambois O,Rinnert H,Devaux X,et al.Influence of the annealing treatments on the luminescence properties of SiO/SiO2 multilayers[J].Journal of Applied Physics,2006,100(12):6128.
18 Brodsky M H.Quantum well model of hydrogenated amorphous silicon[J].Solid State Communications,1980,36(1):55.
19 Gerardi G J,Poindexter E H,Caplan P J,et al.Interface traps and Pb centers in oxidized(100)silicon wafers[J].Applied Physics Letters,1986,49(6):348.
20 Caplan P J,Poindexter E H,Deal B E,et al.ESR centers,interface states,and oxide fixed charge in thermally oxidized silicon wafers[J].Journal of Applied Physics,1979,50(9):5847.
21 Robertson J,Powell M J.Gap states in silicon nitride[J].Applied Physics Letters,1984,44(4):415.
22 Robertson J.Electronic structure of silicon nitride[J].Philosophical Magazine Part B,1991,63(1):47.
23 许圣华,辛煜,宁兆元,等.ECR-CVD制备的非晶SiOxNy薄膜的光致蓝光发射[J].物理学报,2003,52(5):1287.
2 Wei D Y,Chen D Y,Han P G,et al.The structural and optical properties of nc-Si/SiO2 multilayers[J].Chinese Journal of Luminescence,2008,29(1):161.
3 Zhang P,Zhang X,Lu P,et al.Interface state-related linear and nonlinear optical properties of nanocrystalline Si/SiO2 multilayers[J].Applied Surface Science,2014,292(1):262.
4 Yang Q Y,Wang D X,Ding K,et al.Study on the cathodoluminescence of porous silicon film[J].Journal of Light Scattering,2010,22(4):395.
5 赵丽特,范东华,朱慧群,等.从热蒸发多孔氧化硅薄膜表面形貌研究其生长机理[J].材料导报:研究篇,2015,29(3):37.
6 Li D,Jiang Y,Zhang P,et al.The phosphorus and boron co-doping behaviors at nanoscale in Si nanocrystals/SiO2 multilayers[J].Applied Physics Letters,2017,110(23):19.
7 肖清华,屠海令.Si/SiGe异质结构的硅该层中应变对Raman谱特征的影响[J].光谱学与光谱分析,2005,25(5):719.
8 Cerdeira F,Cardona M.Effect of carrier concentration on the Raman frequencies of Si and Ge[J].Physical Review B,1972,5(4):1440.
9 Chen Q Y,Duan M Y,Zhou H P,et al.Photoluminescence of Si/SiNx/SiO2multilayers[J].Chinese Journal of Luminescence,2008,29(2):363.
10 罗志,林璇英,林舜辉,等.氢化非晶硅薄膜中氢含量及键合模式的红外分析[J].物理学报,2003,52(1):169.
11 赵妙,周代兵,谭满清,等.双源电子束蒸发制备Si/SiO2光学薄膜的工艺[J].半导体学报,2006,27(9):1586.
12 郭亨群,林赏心,王启明.纳米Si镶嵌SiO2薄膜的发光与非线性光学特性的应用[J].半导体学报,2006,27(2):345.
13 陈青云,徐明,段满益,等.Si/SiO2和SiNx/SiO2多层膜的室温光致发光[J].半导体光电,2007,28(5):680.
14 刘宁宁,孙甲明,潘少华,等.非晶Si/SiO2超晶格的制备及其光谱研究[J].物理学报,2000,45(5):1019.
15 秦艳,张晓娜,郑坤,等.非晶SiO2纳米线的合成及其显微结构和光学性质的研究[J].电子显微学报,2008,27(2):102.
16 Rinnert H,Vergnat M.Influence of the barrier thickness on the photoluminescence properties of amorphous Si/SiO multilayers[J].Journal of Luminescence,2005,113(1-2):64.
17 Jambois O,Rinnert H,Devaux X,et al.Influence of the annealing treatments on the luminescence properties of SiO/SiO2 multilayers[J].Journal of Applied Physics,2006,100(12):6128.
18 Brodsky M H.Quantum well model of hydrogenated amorphous silicon[J].Solid State Communications,1980,36(1):55.
19 Gerardi G J,Poindexter E H,Caplan P J,et al.Interface traps and Pb centers in oxidized(100)silicon wafers[J].Applied Physics Letters,1986,49(6):348.
20 Caplan P J,Poindexter E H,Deal B E,et al.ESR centers,interface states,and oxide fixed charge in thermally oxidized silicon wafers[J].Journal of Applied Physics,1979,50(9):5847.
21 Robertson J,Powell M J.Gap states in silicon nitride[J].Applied Physics Letters,1984,44(4):415.
22 Robertson J.Electronic structure of silicon nitride[J].Philosophical Magazine Part B,1991,63(1):47.
23 许圣华,辛煜,宁兆元,等.ECR-CVD制备的非晶SiOxNy薄膜的光致蓝光发射[J].物理学报,2003,52(5):1287.