改善玻璃衬底上ZnO薄膜特性的方法
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摘要
利用磁控溅射法在玻璃衬底上淀积铝掺杂氧化锌(AZO)薄膜作为缓冲层,在其上制备了ZnO薄膜。重点研究了AZO薄膜作为缓冲层对玻璃衬底上ZnO薄膜特性的影响。扫描电子显微镜(SEM)图像和X射线衍射(XRD)图谱分析结果表明,玻璃衬底上加入厚度为1μm的AZO缓冲层后,提高了衬底材料和ZnO薄膜之间的晶格匹配程度,有助于增大ZnO薄膜晶粒尺寸,提高其(002)取向择优生长特性、薄膜结晶特性及晶格结构完整性。室温下的透射光谱结果表明玻璃/AZO和玻璃衬底上ZnO薄膜的透光特性没有显著不同。光致发光(PL)谱研究结果表明AZO缓冲层可以有效阻止衬底表面硅原子从ZnO薄膜中"俘获"氧原子,减少ZnO薄膜中的缺陷,改善ZnO薄膜的结晶质量。
By the magnetron sputtering method, an Al-doped ZnO(AZO) thin film was deposited as a buffer layer on the glass substrates, on which ZnO thin films were prepared. Influences of the AZO buffer layer on the properties of ZnO thin films were studied emphatically.Analysis results of the scanning electron microscope(SEM) images and X-ray diffraction(XRD) spectra show that the introduction of the AZO buffer layer with a thickness of 1 μm on the glass substrate can improve the lattice matching degree between the substrate material and ZnO thin film. It is conducive to increasing the crystal grains size of the ZnO thin film, improving the(002) preferred orientation and crystallization properties along with integrality of lattice structure. Results of transmission spectra at room temperature indicate that the transmittance properties of the ZnO thin films on the glass/AZO and glass substrates have no obvious difference. Photoluminescence(PL) spectra show that the AZO buffer layer can effectively prevent the silicon atoms on the substrate surface from "capturing" the oxygen atoms in the ZnO thin film, and that decrease the defects and that improve the crystallization of the ZnO thin film.
By the magnetron sputtering method, an Al-doped ZnO(AZO) thin film was deposited as a buffer layer on the glass substrates, on which ZnO thin films were prepared. Influences of the AZO buffer layer on the properties of ZnO thin films were studied emphatically.Analysis results of the scanning electron microscope(SEM) images and X-ray diffraction(XRD) spectra show that the introduction of the AZO buffer layer with a thickness of 1 μm on the glass substrate can improve the lattice matching degree between the substrate material and ZnO thin film. It is conducive to increasing the crystal grains size of the ZnO thin film, improving the(002) preferred orientation and crystallization properties along with integrality of lattice structure. Results of transmission spectra at room temperature indicate that the transmittance properties of the ZnO thin films on the glass/AZO and glass substrates have no obvious difference. Photoluminescence(PL) spectra show that the AZO buffer layer can effectively prevent the silicon atoms on the substrate surface from "capturing" the oxygen atoms in the ZnO thin film, and that decrease the defects and that improve the crystallization of the ZnO thin film.
引文
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[11]ZHANG Y D,HE W W.Study of I-V characteristics of Zn O film on Si substrate with Ag buffer layer by C-AFM[J].Microelectronics International,2012,29(1):35-39.
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[15]CHER W,YICK S,XU S,et al.Structural,optical and electrical properties of Al-doped Zn O transparent conducting oxide for solar cell applications[J].Functional Materials Letters,2011,4(4):401-405.
[2]AL-HARDAN N H,HAMID M A A,AHMED N M,et al.Ag/Zn O/p-Si/Ag heterojunction and their optoelectronic characteristics under different UV wavelength illumination[J].Sensors and Actuators:A,2016,242:50-57.
[3]LIU Y C,XU H Y,LIU C Y,et al.Recent progress in Zn O-based heterojunction ultraviolet light-emitting devices[J].Chinese Science Bulletin,2014,59(12):1219-1227.
[4]THJEEL H A,SUHAIL A M,NAJI A N,et al.Fabrication and characteristics of fast photo response Zn O/porous silicon UV photoconductive detector[J].Advances in Materials Physics and Chemistry,2011,1:70-77.
[5]ZHOU H,MEI J,GUI P B,et al.The investigation of Al-doped Zn O as an electron transporting layer for visibleblind ultraviolet photodetector based on n-ZnO nanorods/p-Si heterojunction[J].Materials Science in Semiconductor Processing,2015,38:67-71.
[6]LUPAN O,SHISHIYANU S,URSAKI V,et al.Synthesis of nanostructured Al-doped zinc oxide films on Si for solar cells applications[J].Solar Energy Materials and Solar Cells,2009,93(8):1417-1422.
[7]CHA C N,CHOI M H,MA T Y.Effects of substrates on the structural properties of Zn O films deposited by RFmagnetron sputtering[J].Materials Science in Semiconductor Processing,2012,15(3):240-243.
[8]张彩珍,陈永刚,刘肃,等.溶胶-凝胶法制备Na/Mg共掺Zn O薄膜的特性研究[J].材料导报,2013,27(2):1-3.ZHANG C Z,CHEN Y G,LIU S,et al.Research on properties of Na/Mg co-doped Zn O thin films derived by sol-gel method[J].Materials Review,2013,27(2):1-3(in Chinese).
[9]张彩珍,陈永刚,刘肃,等.Na/Mg共掺Zn O薄膜的溶胶-凝胶法制备及特性研究[J].半导体技术,2016,41(7):547-550.ZHANG C Z,CHEN Y G,LIU S,et al.Research on preparation and properties of Na/Mg co-doped Zn O thin films prepared by sol-gel method[J].Semiconductor Technology,2016,41(7):547-550(in Chinese).
[10]KIM H Y,KIM H,KIM D W.Effect of oxygen plasma treatment on the electrical properties in Ag/bulk Zn OSchottky diodes[J].Vacuum,2014,101:92-97.
[11]ZHANG Y D,HE W W.Study of I-V characteristics of Zn O film on Si substrate with Ag buffer layer by C-AFM[J].Microelectronics International,2012,29(1):35-39.
[12]NOVK P,OCENEK J,KOZK T,et al.Identification of electrical properties in individual thickness layers in aluminum-doped zinc oxide films sputtered at 100℃[J].Thin Solid Films,2018,660:471-476.
[13]NECIB K,TOUAM T,CHELOUCHE A,et al.Investigation of the effects of thickness on physical properties of AZO sol-gel films for photonic device applications[J].Journal of Alloys and Compounds,2018,735:2236-2246.
[14]CHAND S,KUMAR R.Electrical characterization of Ni/n-ZnO/p-Si/Al heterostructure fabricated by pulsed laser deposition technique[J].Journal of Alloys and Compounds,2014,613:395-400.
[15]CHER W,YICK S,XU S,et al.Structural,optical and electrical properties of Al-doped Zn O transparent conducting oxide for solar cell applications[J].Functional Materials Letters,2011,4(4):401-405.