高功率半导体激光器红外缺陷发射与热效应
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摘要
高功率半导体激光器具有效率高、寿命长、体积小,及成本低等优点,在国防军事、材料加工和抽运源等领域具有广泛应用。阐述了镓砷/GaAs基近红外波段激光器和镓氮/GaN基蓝绿光波段激光器的缺陷类型、发射特征,以及相关研究进展,通过聚焦商用器件,利用变条件分波段发射谱及其热像,展示了与缺陷相关的发射信号来源和空间分布,分析了内部光学损伤(COD)动力学,指出了现有"外COD"模型在解释器件热退化机理上的局限性。
High power laser diodes(HPLDs)have been widely used in the defense sector,material processing,and pumping sources,considering their advantages such as high efficiency,long lifetime,small size,and low cost.This study describes the types and emission characteristics of the defects and the related advances in GaAs-based near infrared lasers and GaN-based blue-green lasers.By focusing on the commercial devices and using the conditionvariable emission spectra for separated wavebands and the corresponding thermal imaging,the origination and spatial distribution of the emission signals related to the defects are determined.The internal catastrophic optical damage(COD)mechanism is also analyzed.Furthermore,the limitation of the current"external COD"model for interpreting the thermal evolution mechanism of the devices is pointed out.
High power laser diodes(HPLDs)have been widely used in the defense sector,material processing,and pumping sources,considering their advantages such as high efficiency,long lifetime,small size,and low cost.This study describes the types and emission characteristics of the defects and the related advances in GaAs-based near infrared lasers and GaN-based blue-green lasers.By focusing on the commercial devices and using the conditionvariable emission spectra for separated wavebands and the corresponding thermal imaging,the origination and spatial distribution of the emission signals related to the defects are determined.The internal catastrophic optical damage(COD)mechanism is also analyzed.Furthermore,the limitation of the current"external COD"model for interpreting the thermal evolution mechanism of the devices is pointed out.
引文
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[10]An N,Lu P,Wei Z P,et al.Optimization of n-type waveguide structure for 980nm diode laser[J].High Power Laser and Particle Beams,2014,26(10):101015.安宁,芦鹏,魏志鹏,等.980nm半导体激光器n型波导结构优化[J].强激光与粒子束,2014,26(10):101015.
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[14]Sin Y,LaLumondiere S,Foran B,et al.Catastrophic degradation in high-power InGaAsAlGaAs strained quantum well lasers and InAs-GaAs quantum dot lasers[J].Proceedings of SPIE,2013,8640:86401G.
[15]Wen P Y,Zhang S M,Liu J P,et al.Catastrophic degradation of InGaN/GaN blue laser diodes[J].IEEE Transactions on Device and Materials Reliability,2016,16(4):638-641.
[16]Sweeney S J,Lyons L J,Adams A R,et al.Direct measurement of facet temperature up to melting point and COD in high-power 980nm semiconductor diode lasers[J].IEEE Journal of Selected Topics in Quantum Electronics,2003,9(5):1325-1332.
[17]Gong X Q,Feng S W,Yang H W,et al.Degradation analysis of facet coating in GaAs-based high-power laser diodes[J].IEEE Transactions on Device and Materials Reliability,2015,15(3):359-362.
[18]Cao Y L,Wang L,Pan Y Z,et al.Catastrophic damage of high-power semiconductor quantum well laser during the measurement[J].Chinese Journal of Luminescence,2002,23(5):477-480.曹玉莲,王乐,潘玉寨,等.高功率半导体量子阱激光器测试中的灾变性损伤[J].发光学报,2002,23(5):477-480.
[19]Hempel M,Tomm J W,Ziegler M,et al.Catastrophic optical damage at front and rear facets of diode lasers[J].Applied Physics Letters,2010,97(23):231101.
[20]Hempel M,Tomm J W,Yue F Y,et al.Shortwavelength infrared defect emission as a probe of degradation processes in 980nm single-mode diode lasers[J].Laser&Photonics Reviews,2014,8(5):L59-L64.
[21]Yue F Y,Chu J H,Wu J,et al.Modulated photoluminescence of shallow levels in arsenic-doped Hg1-xCdxTe(x≈0.3)grown by molecular beam epitaxy[J].Applied Physics Letters,2008,92(12):121916.
[22]Kernke R,Wang H,Hong J,et al.Origin of yellow emissions from(In,Ga,Al)N based 450 nm emitting diode lasers[J].OSA Continuum,2019,2(5):1496-1501.
[23]Tomm J W,Ziegler M,Hempel M,et al.Mechanisms and fast kinetics of the catastrophic optical damage(COD)in GaAs-based diode lasers[J].Laser&Photonics Reviews,2011,5(3):422-441.
[24]Ziegler M,Pomraenke R,Felger M,et al.Infrared emission from the substrate of GaAs-based semiconductor lasers[J].Applied Physics Letters,2008,93(4):041101.
[25]Zhou L.Research on anti catastrophic optical damage of high power semiconductor laser diodes[D].Changchun:Changchun University of Science and Technology,2014.周路.高功率半导体激光器抗COD关键技术研究[D].长春:长春理工大学,2014.
[26]Yuan Q H,Jing H Q,Zhang Q Y,et al.Development and applications of GaAs-based nearinfrared high power semiconductor lasers[J].Laser&Optoelectronics Progress,2019,56(4):040003.袁庆贺,井红旗,张秋月,等.砷化镓基近红外大功率半导体激光器的发展及应用[J].激光与光电子学进展,2019,56(4):040003.
[27]Tomiya S,Hino T,Goto S,et al.Dislocation related issues in the degradation of GaN-based laser diodes[J].IEEE Journal of Selected Topics in Quantum Electronics,2004,10(6):1277-1286.
[28]Auf der Maur M A,Pecchia A,Penazzi G,et al.Efficiency drop in green InGaN/GaN light emitting diodes:the role of random alloy fluctuations[J].Physical Review Letters,2016,116(2):027401.
[29]Tomm J W,Kernke R,Mura G,et al.Catastrophic optical damage of GaN-based diode lasers:sequence of events,damage pattern,and comparison with GaAs-based devices[J].Journal of Electronic Materials,2018,47(9):4959-4963.
[30]Wang J X,Sun D Z,Wang X L,et al.Study on photoluminescence of high quality GaN[J].Journal of Applied Optics,2001,22(2):35-38.王军喜,孙殿照,王晓亮,等.高质量氮化镓材料的光致发光研究[J].应用光学,2001,22(2):35-38.
[31]Tang W C,Rosen H J,Vettiger P,et al.Evidence for current-density-induced heating of AlGaAs singlequantum-well laser facets[J].Applied Physics Letters,1991,59(9):1005-1007.
[32]Tomm J W,Ziegler M,Talalaev V,et al.New approaches towards the understanding of the catastrophic optical damage process in in-plane diode lasers[J].Proceedings of SPIE,2009,7230:72300V.
[33]Sun Y,Zhou K,Sun Q,et al.Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si[J].Nature Photonics,2016,10(9):595-599.
[2]Bachmann F,Loosen P,Poprawe R.High power diode lasers[M].New York:Springer,2007.
[3]Yang G W,Xu J Y,Xu Z T,et al.Reliability of InGaAs/AlGaAs strained quantum well lasers[J].Chinese Journal of Semiconductor,1999,20(4):278-283.杨国文,徐俊英,徐遵图,等.InGaAs/AlGaAs应变量子阱激光器的可靠性[J].半导体学报,1999,20(4):278-283.
[4]Wang H.Fabrication of continuous-wave high power semiconductor laser[D].Xi′an:Xidian University,2007.王辉.连续大功率半导体激光器的研制[D].西安:西安电子科技大学,2007.
[5]Ma X Y,Wang J,Liu S P.Present situation of investigations and applications in high power semiconductor lasers[J].Infrared and Laser Engineering,2008,37(2):189-194.马骁宇,王俊,刘素平.国内大功率半导体激光器研究及应用现状[J].红外与激光工程,2008,37(2):189-194.
[6]Wang L J,Ning Y Q.High power semiconductor laser[M].Beijing:National Defense Industry Press,2016.王立军,宁永强.高功率半导体激光器[M].北京:国防工业出版社,2016.
[7]Wang W Z,Jing H Q,Qi Q,et al.Reliability test and failure analysis of high power semiconductor laser[J].Chinese Journal of Luminescence,2017,38(2):165-169.王文知,井红旗,祁琼,等.大功率半导体激光器可靠性研究和失效分析[J].发光学报,2017,38(2):165-169.
[8]Hempel M,Tomm J W,Stojetz B,et al.Kinetics of catastrophic optical damage in GaN-based diode lasers[J].Semiconductor Science and Technology,2015,30(7):072001.
[9]Xu Z W,Qu Y,Wang Y Z,et al.Simulation analysis of high power asymmetric 980 nm broadwaveguide diode lasers[J].Infrared and Laser Engineering,2014,43(4):1094-1098.徐正文,曲轶,王钰智,等.高功率980nm非对称宽波导半导体激光器设计[J].红外与激光工程,2014,43(4):1094-1098.
[10]An N,Lu P,Wei Z P,et al.Optimization of n-type waveguide structure for 980nm diode laser[J].High Power Laser and Particle Beams,2014,26(10):101015.安宁,芦鹏,魏志鹏,等.980nm半导体激光器n型波导结构优化[J].强激光与粒子束,2014,26(10):101015.
[11]Zhou M,Zhao D G.Barrier and well thickness designing of InGaN/GaN multiple quantum well for better performances of GaN based laser diode[J].Acta Physica Sinica,2016,65(7):077802.周梅,赵德刚.InGaN/GaN量子阱垒层和阱层厚度对GaN基激光器性能的影响及机理[J].物理学报,2016,65(7):077802.
[12]Liu D.Thermal characteristics of high power vertical-cavity surface-emitting laser[D].Changchun:Graduate University of the Chinese Academy of Sciences,2012.刘迪.高功率垂直腔面发射激光器的热行为特性[D].长春:中国科学院研究生院,2012.
[13]Wang S N,Bo B X,Xu L Y,et al.Thermal analysis on semiconductor laser with non-injection region[J].Chinese Journal of Luminescence,2014,35(8):969-973.王胜楠,薄报学,许留洋,等.基于腔面非注入区的半导体激光器的热特性分析[J].发光学报,2014,35(8):969-973.
[14]Sin Y,LaLumondiere S,Foran B,et al.Catastrophic degradation in high-power InGaAsAlGaAs strained quantum well lasers and InAs-GaAs quantum dot lasers[J].Proceedings of SPIE,2013,8640:86401G.
[15]Wen P Y,Zhang S M,Liu J P,et al.Catastrophic degradation of InGaN/GaN blue laser diodes[J].IEEE Transactions on Device and Materials Reliability,2016,16(4):638-641.
[16]Sweeney S J,Lyons L J,Adams A R,et al.Direct measurement of facet temperature up to melting point and COD in high-power 980nm semiconductor diode lasers[J].IEEE Journal of Selected Topics in Quantum Electronics,2003,9(5):1325-1332.
[17]Gong X Q,Feng S W,Yang H W,et al.Degradation analysis of facet coating in GaAs-based high-power laser diodes[J].IEEE Transactions on Device and Materials Reliability,2015,15(3):359-362.
[18]Cao Y L,Wang L,Pan Y Z,et al.Catastrophic damage of high-power semiconductor quantum well laser during the measurement[J].Chinese Journal of Luminescence,2002,23(5):477-480.曹玉莲,王乐,潘玉寨,等.高功率半导体量子阱激光器测试中的灾变性损伤[J].发光学报,2002,23(5):477-480.
[19]Hempel M,Tomm J W,Ziegler M,et al.Catastrophic optical damage at front and rear facets of diode lasers[J].Applied Physics Letters,2010,97(23):231101.
[20]Hempel M,Tomm J W,Yue F Y,et al.Shortwavelength infrared defect emission as a probe of degradation processes in 980nm single-mode diode lasers[J].Laser&Photonics Reviews,2014,8(5):L59-L64.
[21]Yue F Y,Chu J H,Wu J,et al.Modulated photoluminescence of shallow levels in arsenic-doped Hg1-xCdxTe(x≈0.3)grown by molecular beam epitaxy[J].Applied Physics Letters,2008,92(12):121916.
[22]Kernke R,Wang H,Hong J,et al.Origin of yellow emissions from(In,Ga,Al)N based 450 nm emitting diode lasers[J].OSA Continuum,2019,2(5):1496-1501.
[23]Tomm J W,Ziegler M,Hempel M,et al.Mechanisms and fast kinetics of the catastrophic optical damage(COD)in GaAs-based diode lasers[J].Laser&Photonics Reviews,2011,5(3):422-441.
[24]Ziegler M,Pomraenke R,Felger M,et al.Infrared emission from the substrate of GaAs-based semiconductor lasers[J].Applied Physics Letters,2008,93(4):041101.
[25]Zhou L.Research on anti catastrophic optical damage of high power semiconductor laser diodes[D].Changchun:Changchun University of Science and Technology,2014.周路.高功率半导体激光器抗COD关键技术研究[D].长春:长春理工大学,2014.
[26]Yuan Q H,Jing H Q,Zhang Q Y,et al.Development and applications of GaAs-based nearinfrared high power semiconductor lasers[J].Laser&Optoelectronics Progress,2019,56(4):040003.袁庆贺,井红旗,张秋月,等.砷化镓基近红外大功率半导体激光器的发展及应用[J].激光与光电子学进展,2019,56(4):040003.
[27]Tomiya S,Hino T,Goto S,et al.Dislocation related issues in the degradation of GaN-based laser diodes[J].IEEE Journal of Selected Topics in Quantum Electronics,2004,10(6):1277-1286.
[28]Auf der Maur M A,Pecchia A,Penazzi G,et al.Efficiency drop in green InGaN/GaN light emitting diodes:the role of random alloy fluctuations[J].Physical Review Letters,2016,116(2):027401.
[29]Tomm J W,Kernke R,Mura G,et al.Catastrophic optical damage of GaN-based diode lasers:sequence of events,damage pattern,and comparison with GaAs-based devices[J].Journal of Electronic Materials,2018,47(9):4959-4963.
[30]Wang J X,Sun D Z,Wang X L,et al.Study on photoluminescence of high quality GaN[J].Journal of Applied Optics,2001,22(2):35-38.王军喜,孙殿照,王晓亮,等.高质量氮化镓材料的光致发光研究[J].应用光学,2001,22(2):35-38.
[31]Tang W C,Rosen H J,Vettiger P,et al.Evidence for current-density-induced heating of AlGaAs singlequantum-well laser facets[J].Applied Physics Letters,1991,59(9):1005-1007.
[32]Tomm J W,Ziegler M,Talalaev V,et al.New approaches towards the understanding of the catastrophic optical damage process in in-plane diode lasers[J].Proceedings of SPIE,2009,7230:72300V.
[33]Sun Y,Zhou K,Sun Q,et al.Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si[J].Nature Photonics,2016,10(9):595-599.