不同衬底对NiO薄膜结构和光透过性能的影响
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摘要
采用溶胶-凝胶旋涂法分别以玻璃和ITO为衬底,制备出具有较高光透过性能的NiO薄膜.进而利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、薄膜测厚仪和紫外-可见分光光度计(UV-VIS)分别表征了NiO薄膜的晶粒结构、表面形貌、薄膜厚度及光透过性能,并计算了薄膜的光学带隙值.结果表明:不同的衬底对NiO薄膜的结构和光透过性能具有一定的影响;在玻璃衬底上制备的NiO薄膜晶粒尺寸大小均一且沿NiO(200)择优生长,而在ITO衬底上制备的NiO薄膜晶粒尺寸较小且薄膜厚度较薄.两者在可见光范围内的平均透过率均达到80%左右,但在ITO衬底上制备的NiO薄膜在500nm左右有明显的吸收现象.并且在玻璃衬底上制备的NiO薄膜光学带隙值达到3.95eV.
NiO films with high light transmission on the glass substrate and the ITO substrate were successfully synthesized by sol-gel method.The crystal structural,surface morphology,film thickness and optical transmission spectra of samples were measured by XRD,SEM,Spectra Thick Series and UV-VIS,respectively.And their optical band gap values were calculated.The experimental results indicate that the NiO films on the different substrates had different structure and optical transmission.The grain sizes of NiO films synthesized on the glass substrates are uniform with preferred growth of NiO(200)axis.But the grain sizes of NiO films synthesized on the ITO substrate are smaller and the thickness of films is thinner.The average transmittances in the visible range of NiO thin films are both around 80%,but the NiO films on the ITO substrate has an absorption phenomenon at around 500 nm.Meanwhile,the optical band gap width of the sample that is deposited on glass substrates is larger and reaches to 3.95 eV.
NiO films with high light transmission on the glass substrate and the ITO substrate were successfully synthesized by sol-gel method.The crystal structural,surface morphology,film thickness and optical transmission spectra of samples were measured by XRD,SEM,Spectra Thick Series and UV-VIS,respectively.And their optical band gap values were calculated.The experimental results indicate that the NiO films on the different substrates had different structure and optical transmission.The grain sizes of NiO films synthesized on the glass substrates are uniform with preferred growth of NiO(200)axis.But the grain sizes of NiO films synthesized on the ITO substrate are smaller and the thickness of films is thinner.The average transmittances in the visible range of NiO thin films are both around 80%,but the NiO films on the ITO substrate has an absorption phenomenon at around 500 nm.Meanwhile,the optical band gap width of the sample that is deposited on glass substrates is larger and reaches to 3.95 eV.
引文
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[12]王秋丽,王嘉博,宋中凯,等.多孔氧化镍薄膜的制备及其超级电容器性能[J].应用化学,2015,32(11):1335-1342.
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[15]PARK N,SUN K,SUN Z L,et al.High efficiency NiO/ZnO heterojunction UV photodiode by sol-gel processing[J].Journal of Materials Chemistry C,2013,1(44):7333-7338.
[16]董燕,张波萍,张雅茹,等.Li和Ti共掺NiO薄膜的溶胶-凝胶法制备及其介电性能[J].功能材料,2006,37(8):1226-1228.
[17]ABBASI M A,IBUPOTO Z H,HUSSAIN M,et al.The fabrication of white light-emitting diodes using the n-ZnO/NiO/p-GaN heterojunction with enhanced luminescence[J].Nanoscale Research Letters,2013,8(1):1-6.
[18]张国宏,祁康成,权祥,等.磁控溅射NiO/ZnO透明异质结二极管及其光电特性研究[J].电子器件,2011,34(1):33-35.
[19]李彤,王铁刚,陈佳楣,等.衬底温度对NiO:Cu/ZnO异质pn结的光电性能影响[J].光电子·激光,2016,27(4):386-391.
[20]AWAIS M,DOWLING D D,RAHMAN M,et al.Spray-deposited NiOxfilms on ITO substrates as photoactive electrodes for ptype dye-sensitized solar cells[J].Journal of Applied Electrochemistry,2013,43(2):191-197.
[2]曾玉琴,杨艳,余忠,等.氧含量与溅射气压对NiO薄膜形貌和结构的影响[J].磁性材料及器件,2014,45(3):1-4.
[3]刘震,吴锋,王芳,等.NiO薄膜电极的电沉积制备及其性能研究[J].材料导报,2006,20(6):137-139.
[4]肖正国,曾雪松,郭浩民,等.NiO透明导电薄膜的制备及在聚合物太阳能电池中的应用[J].物理学报,2012,61(2):365-370.
[5]SASAKI T,ICHIKUNI N,HARA T,et al.Structural analysis of NiO nanocluster catalysts on SiO2by using XAFS measurements[J].Journal of Physics Conference Series,2016,712(1):012069-012074.
[6]薄国帅,张中红,王霞,等.离子液体-有机液体混合体系中制备NiO电致变色薄膜的结构和性能[J].科学技术与工程,2016,16(8):1-7.
[7]GRILLI M L,MENCHINI F,DIKONIMOS T,et al.Effect of growth parameters on the properties of RF-sputtered highly conductive and transparent p-type NiOxfilms[J].Semiconductor Science&Technology,2016,31(5):055011-055016.
[8]李建昌,李润霞,郑辰平,等.NiO-TiO2纳米复合薄膜的阻变特性[J].东北大学学报(自然科学版),2016,37(5):688-691.
[9]YANG Z G,ZHU L P,GUO Y M,et al.Valence-band offset of p-NiO/n-ZnO heterojunction measured by X-ray photoelectronspectroscopy[J].Physics Letters A,2011,375(16):1760-1763.
[10]叶珂,乔明.一种NiO薄膜的新型制备方法及其应用[J].电子与封装,2016,16(5):31-34.
[11]陈娜,苏革,柳伟,等.锰掺杂氧化镍薄膜的电沉积及性能[J].材料工程,2014(11):67-72.
[12]王秋丽,王嘉博,宋中凯,等.多孔氧化镍薄膜的制备及其超级电容器性能[J].应用化学,2015,32(11):1335-1342.
[13]MANDERS J R,TSANG S W,HARTEL M J,et al.Solution-processed nickel oxide hole transport layers in high efficiency polymer photovoltaic cells[J].Advanced Functional Materials,2013,23(23):2993-3001.
[14]JOSHI D C,THOTA S,NAYAK S,et al.The dielectric behavior of Zn1-xNixO/NiO two-phase composites[J].Journal of Physics D:Applied Physics,2014,47(43):435305-435313.
[15]PARK N,SUN K,SUN Z L,et al.High efficiency NiO/ZnO heterojunction UV photodiode by sol-gel processing[J].Journal of Materials Chemistry C,2013,1(44):7333-7338.
[16]董燕,张波萍,张雅茹,等.Li和Ti共掺NiO薄膜的溶胶-凝胶法制备及其介电性能[J].功能材料,2006,37(8):1226-1228.
[17]ABBASI M A,IBUPOTO Z H,HUSSAIN M,et al.The fabrication of white light-emitting diodes using the n-ZnO/NiO/p-GaN heterojunction with enhanced luminescence[J].Nanoscale Research Letters,2013,8(1):1-6.
[18]张国宏,祁康成,权祥,等.磁控溅射NiO/ZnO透明异质结二极管及其光电特性研究[J].电子器件,2011,34(1):33-35.
[19]李彤,王铁刚,陈佳楣,等.衬底温度对NiO:Cu/ZnO异质pn结的光电性能影响[J].光电子·激光,2016,27(4):386-391.
[20]AWAIS M,DOWLING D D,RAHMAN M,et al.Spray-deposited NiOxfilms on ITO substrates as photoactive electrodes for ptype dye-sensitized solar cells[J].Journal of Applied Electrochemistry,2013,43(2):191-197.