拉锭速度对铸造准单晶硅固液界面、氧含量及V/Gn值的影响
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摘要
太阳能级铸造准单晶硅具有较高的光电转换效率和低的生产成本,是一种具有竞争力的晶硅类太阳能电池材料。本文采用CGSim晶体生长软件,系统分析了拉锭速度对固液界面,晶体氧含量和V/Gn值的影响。结果表明,一方面,随着拉锭速度的增大,固液界面曲率逐渐加大,增加了铸锭边缘区域多晶的形成几率;另一方面,熔体温度逐渐降低,导致晶体氧含量会逐渐减少;同时,拉锭速度大于10 mm/h时,固液界面处V/Gn值均大于临界值。最终,最佳的铸造准单晶硅拉锭速度为10~15 mm/h。
Due to higher solar cell efficiency and lower cost,the quasi-single crystal silicon becomes one of the competitive silicon-based solar cell productions. The influence of pulling rates on the solid-liquid interface,oxygen concentration and V / Gn was analyzed by the CG-sim software. The results show that the curvature of solid-liquid interface was increased with increasing the pulling rates,which increased nucleation frequency of the grains in the ingot edgy area. On the other hand,the melt temperature decreased,resulting in oxygen concentration decreased with increasing the pulling rates. At the same time,the V / Gn value will be more than a critical value when pulling rate is above 10 mm / h. Lastly,the optimized pulling rates for preparing the quasi-single silicon is in the range of 10 mm / h to 15 mm / h.
Due to higher solar cell efficiency and lower cost,the quasi-single crystal silicon becomes one of the competitive silicon-based solar cell productions. The influence of pulling rates on the solid-liquid interface,oxygen concentration and V / Gn was analyzed by the CG-sim software. The results show that the curvature of solid-liquid interface was increased with increasing the pulling rates,which increased nucleation frequency of the grains in the ingot edgy area. On the other hand,the melt temperature decreased,resulting in oxygen concentration decreased with increasing the pulling rates. At the same time,the V / Gn value will be more than a critical value when pulling rate is above 10 mm / h. Lastly,the optimized pulling rates for preparing the quasi-single silicon is in the range of 10 mm / h to 15 mm / h.
引文
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[7]李进,张洪岩,高忙忙,等.氩气流速对400mm大直径磁场直拉单晶硅固液界面、热应力及氧含量的影响[J].人工晶体学报,2014,43(5):1193-1198.
[8]http://www.str-soft.com/products/CGSim/.
[9]李进,薛子文,高忙忙,等.感应加热制备太阳能级铸造准单晶硅熔体流动行为研究[J].人工晶体学报,2015,43(增刊),已接收.
[10]吕国强,马文会,杨玺,等.工业硅真空感应精炼过程数值模拟.[J].材料热处理学报,2013,34(8):189-194.
[11]吕国强,马文会,王华,等.工业硅真空感应精炼过程熔体流动行为数值模拟.[J].材料热处理学报2013,34(10):181-186.
[12]张向宇,关小军,潘忠奔,等.热屏位置对直拉单晶硅V/G、点缺陷和热应力影响的模拟.[J].人工晶体学报,2014,43(4):771-777.
[2]Yu Q,Liu L J,Ma W,et al.Local design of the hot-zone in an industrial seeded directional solidification furnace for quasi-single crystalline silicon ingots[J].Journal of crystal growth,2012,358:5-11.
[3]余庆华,刘立军,钟根香,等.准单晶硅铸锭过程中凝固界面形状控制[J].工程热物理学报,2013,34(3):505-508.
[4]娄中士,左然,苏文佳,杨琳.大晶粒多晶硅铸锭生长的热场设计与模拟[J].人工晶体学报,2011,40(6):1602-1606.
[5]Chang C E,Wilcox W R.Control of interface shape in the vertical Bridgman-stockbarger technique[J].Journal crystal Growth,1974,21(1):135-140.
[6]谭毅,孙世海,董伟,等.多晶硅定向凝固过程中固液界面特性研究[J].材料工程,2012,8:33-38.
[7]李进,张洪岩,高忙忙,等.氩气流速对400mm大直径磁场直拉单晶硅固液界面、热应力及氧含量的影响[J].人工晶体学报,2014,43(5):1193-1198.
[8]http://www.str-soft.com/products/CGSim/.
[9]李进,薛子文,高忙忙,等.感应加热制备太阳能级铸造准单晶硅熔体流动行为研究[J].人工晶体学报,2015,43(增刊),已接收.
[10]吕国强,马文会,杨玺,等.工业硅真空感应精炼过程数值模拟.[J].材料热处理学报,2013,34(8):189-194.
[11]吕国强,马文会,王华,等.工业硅真空感应精炼过程熔体流动行为数值模拟.[J].材料热处理学报2013,34(10):181-186.
[12]张向宇,关小军,潘忠奔,等.热屏位置对直拉单晶硅V/G、点缺陷和热应力影响的模拟.[J].人工晶体学报,2014,43(4):771-777.