NPC三电平中IGBT焊料层多物理场耦合失效分析
|
摘要
针对传统的多物理耦合分析建模方式需要试验来提取参数,同时电物理参数的提取难度大,静态功耗的计算正确性难以保证、耗费了人力物力等问题,提出一种利用IGBT动态模型来分析焊料层多物理场耦合失效的方法。首先对IGBT模块进行动态仿真,使用Simplorer软件计算NPC三电平逆变器的动态功耗;然后使用动态功耗在ANSYS软件中进行三维有限元建模;最后利用三维有限元模型求解出电-热-力多物理耦合失效分析的解。分析功耗仿真结果可知,逆变器内侧IGBT的功耗要比外侧IGBT高,有限元分析结果验证了动态模型可以准确仿真三电平逆变器功耗不均衡问题。分析三维有限元耦合仿真结果可知,与传统IGBT电-热耦合仿真相比,结温仿真模型误差减小了10%。电-热-力多物理场耦合模型可以更好的显示IGBT焊料层存在缺陷时的多场应力状态。研究结果表明,该方法操作简单,动态功耗求解结果和多物理耦合应力分析结果准确度较高。
For traditional multi-physical coupling analysis modeling methods,experiments are needed to extract parameters,at the same time,the extraction of electrical physical parameters is difficult,and the calculation accuracy of power consumption is difficult to guarantee,it is greatly costing manpower and resources. A method for analyzing multi-physics coupling failure of solder layer by using IGBT dynamic model is proposed. Firstly,the IGBT module is dynamically simulated,and the Simplorer software is used to calculate the dynamic power consumption of the NPC three-level inverter,then use dynamic power to perform 3D finite element modeling in Ansys software,finally,the solution of the electric-thermal-force multi-physical coupling failure analysis is solved by using the threedimensional finite element model. Analyze the power simulation results show that the power consumption of the IGBT inside the inverter is higher than that of the outer IGBT,and the finite element analysis results verify that the dynamic model can accurately simulate the inverter power imbalance problem. Analysis of 3 D finite element coupling simulation results show that compared with the traditional IGBT temperature simulation model,the error of the junction temperature simulation model is reduced by 10%. The electro-thermal-force multi-physics coupling model constructed in this paper can better display the multi-field stress state of IGBT solder layer defects. The research results show that the method is simple to operate,the dynamic power solution results and the multi-physical coupled stress analysis results are more accurate.
For traditional multi-physical coupling analysis modeling methods,experiments are needed to extract parameters,at the same time,the extraction of electrical physical parameters is difficult,and the calculation accuracy of power consumption is difficult to guarantee,it is greatly costing manpower and resources. A method for analyzing multi-physics coupling failure of solder layer by using IGBT dynamic model is proposed. Firstly,the IGBT module is dynamically simulated,and the Simplorer software is used to calculate the dynamic power consumption of the NPC three-level inverter,then use dynamic power to perform 3D finite element modeling in Ansys software,finally,the solution of the electric-thermal-force multi-physical coupling failure analysis is solved by using the threedimensional finite element model. Analyze the power simulation results show that the power consumption of the IGBT inside the inverter is higher than that of the outer IGBT,and the finite element analysis results verify that the dynamic model can accurately simulate the inverter power imbalance problem. Analysis of 3 D finite element coupling simulation results show that compared with the traditional IGBT temperature simulation model,the error of the junction temperature simulation model is reduced by 10%. The electro-thermal-force multi-physics coupling model constructed in this paper can better display the multi-field stress state of IGBT solder layer defects. The research results show that the method is simple to operate,the dynamic power solution results and the multi-physical coupled stress analysis results are more accurate.
引文
[1]马大俊,胡存刚,王群京,等.三电平ANPC逆变器中点电压平衡控制策略[J].电子测量与仪器学报,2016,30(12):1992-2000.MA D J,HU C G,WANG Q J,et al.Neutral-point potential balancing control strategy in three-level ANPCinverter[J].Journal of Electronic Instrument and Instrumentation,2016,30(12):1992-2000.
[2]ZHANG X,WANG F,JI W,et al.Fault tolerant control method for three-level photovoltaic inverter based on redundant voltage space vector[C].Control Conference,IEEE,2017:9249-9253.
[3]胡存刚,王群京,严辉,等.三电平中点箝位型逆变器中点电压平衡和控制方法研究[J].电子测量与仪器学报,2009,23(6):74-81.HU C G,WANG Q J,YAN H,et al.Research on neutral-point potential balancing and control method for three-level NPC inverter[J].Journal Of Electronic Instrument and Instrumentation,2009,23(6):74-81.
[4]何湘宁,杨兵建,吴岩松,等.大功率三电平逆变器开关动态特性在线测试方法研究[J].中国电机工程学报,2012,32(24):23-29.HE X N,YANG B J,WU Y S,et al.An on-line test method of switching dynamic performances in high power three-level inverters[J].Proceedings of the CSEE 2012,32(24):23-29.
[5]陈民铀,陈一高,高兵,等.考虑老化进程对热参数影响的IGBT模块寿命评估[J].中国电机工程学报,2017,37(18):5427-5436.CHEN M Y,CHEN Y G,GAO B,et al.Lifetime estimation of IGBT module considering influence of aging process on thermal parameters[J].Proceedings of the CSEE,2017,37(18):5427-5436.
[6]张磊,贺强民,包斌.一种用于筛选高可靠性FPGA的硬件测试电路[J].电子测量技术,2015,38(2):68-73.ZHANG L,HE Q M,BAO B.Hardware testing circuit which is used for screening high-reliability FPGA[J].Electronic Measurement Technology,2015,38(2):68-73.
[7]CHRISTOPHE B,NICOLAS G,JOE A.Lumped dynamic electrothermal model of IGBT module of inverters[J].IEEE Transactions on Components Packaging and Manufacturing Technology,2015,5(3):355-364.
[8]江南.计及疲劳累积效应的IGBT模块焊料层失效机理及疲劳损伤研究[D].重庆:重庆大学,2016.JIANG N.Study on failure mechanism and fatigue damage of the solder layer in the IGBT module considering cumulative damage[D].Chongqing:Chongqing University,2016
[9]王红军,汪亮.基于多域空间状态特征的高端装备运行可靠性评价[J].仪器仪表学报,2016,37(4):804-810.WANG H J,WANG L.High-end equipment operating reliability assessment based on multi-domain status space[J].Chinese Journal of Scientific Instrument,2016,37(4):804-810.
[10]陈民铀,高兵,杨帆,等.基于电-热-机械应力多物理场的IGBT焊料层健康状态研究[J].电工技术学报,2015,30(20):252-260.CHEN M Y,GAO B,YANG F,et al.Healthy Evaluation on IGBT Solder Based on Electro-ThermalMechanical Analysis[J].Transactions of China Electrotechnical Society,2015,30(20):252-260.
[11]侯月.高温环境下IGBT建模与结温预测方法研究[D].哈尔滨:哈尔滨工业大学,2017.HOU Y.Research on modeling and junction temperature predicting of IGBT under high temperature[D].Harbin:Harbin Institute of Technology,2017.
[12]黄思思.航天关键功率电子器件IGBT筛选技术研究[D].成都:电子科技大学,2018.HUANG S S.Screening technology for aerospace critical power electronic devices IGBT[D].Chengdu:University of Electronic Science and Technology of China,2018
[13]SWAN I,BRYANT A,MAWBY P A,et al.a fast loss and temperature simulation method for power converters,Part II:3-D thermal model of power module[J].IEEETransactions on Power Electronics,2012,27(1):258-268.
[14]WU R,WANG H,PEDERSEN K B,et al.Atemperature-dependent thermal model of IGBT modules suitable for circuit-level simulations[J].IEEETransactions on Industry Applications,2016,52(4):3306-3314.
[15]WANG Z,QIAO W.An effective heat propagation pathbased online adaptive thermal model for IGBT modules[C].IEEE Applied Power Electronics Conference and Exposition-APEC,2014:513-518.
[16]ELEFFENDI M A,JOHNSON C M.Application of Kalman filter to estimate junction temperature in IGBTpower modules[J].IEEE Transactions on Power Electronics,2015,31(2):1576-1587.
[17]WANG Z,TIAN B,QIAO W,et al.Real-time aging monitoring for IGBT modules using case temperature[J].IEEE Transactions on Industrial Electronics,2016,63(2):1168-1178.
[18]BAHMAN A S,MA K,BLABJERG F.Thermal impedance model of high power IGBT modules considering heat coupling effects[C].Power Electronics and Application Conference and Exposition,IEEE,2014:1382-1387.
[19]LAI W,CHEN M,RAN L,et al.Experimental investigation on the effects of narrow junction temperature cycles on die-attach solder layer in an IGBT module[J].IEEE Transactions on Power Electronics,2016,32(2):1431-1441.
[20]WANG Z,QIAO W.A physics-based improved cauertype thermal equivalent circuit for IGBT modules[J].IEEE Transactions on Power Electronics,2016,31(10):6781-6786.
[2]ZHANG X,WANG F,JI W,et al.Fault tolerant control method for three-level photovoltaic inverter based on redundant voltage space vector[C].Control Conference,IEEE,2017:9249-9253.
[3]胡存刚,王群京,严辉,等.三电平中点箝位型逆变器中点电压平衡和控制方法研究[J].电子测量与仪器学报,2009,23(6):74-81.HU C G,WANG Q J,YAN H,et al.Research on neutral-point potential balancing and control method for three-level NPC inverter[J].Journal Of Electronic Instrument and Instrumentation,2009,23(6):74-81.
[4]何湘宁,杨兵建,吴岩松,等.大功率三电平逆变器开关动态特性在线测试方法研究[J].中国电机工程学报,2012,32(24):23-29.HE X N,YANG B J,WU Y S,et al.An on-line test method of switching dynamic performances in high power three-level inverters[J].Proceedings of the CSEE 2012,32(24):23-29.
[5]陈民铀,陈一高,高兵,等.考虑老化进程对热参数影响的IGBT模块寿命评估[J].中国电机工程学报,2017,37(18):5427-5436.CHEN M Y,CHEN Y G,GAO B,et al.Lifetime estimation of IGBT module considering influence of aging process on thermal parameters[J].Proceedings of the CSEE,2017,37(18):5427-5436.
[6]张磊,贺强民,包斌.一种用于筛选高可靠性FPGA的硬件测试电路[J].电子测量技术,2015,38(2):68-73.ZHANG L,HE Q M,BAO B.Hardware testing circuit which is used for screening high-reliability FPGA[J].Electronic Measurement Technology,2015,38(2):68-73.
[7]CHRISTOPHE B,NICOLAS G,JOE A.Lumped dynamic electrothermal model of IGBT module of inverters[J].IEEE Transactions on Components Packaging and Manufacturing Technology,2015,5(3):355-364.
[8]江南.计及疲劳累积效应的IGBT模块焊料层失效机理及疲劳损伤研究[D].重庆:重庆大学,2016.JIANG N.Study on failure mechanism and fatigue damage of the solder layer in the IGBT module considering cumulative damage[D].Chongqing:Chongqing University,2016
[9]王红军,汪亮.基于多域空间状态特征的高端装备运行可靠性评价[J].仪器仪表学报,2016,37(4):804-810.WANG H J,WANG L.High-end equipment operating reliability assessment based on multi-domain status space[J].Chinese Journal of Scientific Instrument,2016,37(4):804-810.
[10]陈民铀,高兵,杨帆,等.基于电-热-机械应力多物理场的IGBT焊料层健康状态研究[J].电工技术学报,2015,30(20):252-260.CHEN M Y,GAO B,YANG F,et al.Healthy Evaluation on IGBT Solder Based on Electro-ThermalMechanical Analysis[J].Transactions of China Electrotechnical Society,2015,30(20):252-260.
[11]侯月.高温环境下IGBT建模与结温预测方法研究[D].哈尔滨:哈尔滨工业大学,2017.HOU Y.Research on modeling and junction temperature predicting of IGBT under high temperature[D].Harbin:Harbin Institute of Technology,2017.
[12]黄思思.航天关键功率电子器件IGBT筛选技术研究[D].成都:电子科技大学,2018.HUANG S S.Screening technology for aerospace critical power electronic devices IGBT[D].Chengdu:University of Electronic Science and Technology of China,2018
[13]SWAN I,BRYANT A,MAWBY P A,et al.a fast loss and temperature simulation method for power converters,Part II:3-D thermal model of power module[J].IEEETransactions on Power Electronics,2012,27(1):258-268.
[14]WU R,WANG H,PEDERSEN K B,et al.Atemperature-dependent thermal model of IGBT modules suitable for circuit-level simulations[J].IEEETransactions on Industry Applications,2016,52(4):3306-3314.
[15]WANG Z,QIAO W.An effective heat propagation pathbased online adaptive thermal model for IGBT modules[C].IEEE Applied Power Electronics Conference and Exposition-APEC,2014:513-518.
[16]ELEFFENDI M A,JOHNSON C M.Application of Kalman filter to estimate junction temperature in IGBTpower modules[J].IEEE Transactions on Power Electronics,2015,31(2):1576-1587.
[17]WANG Z,TIAN B,QIAO W,et al.Real-time aging monitoring for IGBT modules using case temperature[J].IEEE Transactions on Industrial Electronics,2016,63(2):1168-1178.
[18]BAHMAN A S,MA K,BLABJERG F.Thermal impedance model of high power IGBT modules considering heat coupling effects[C].Power Electronics and Application Conference and Exposition,IEEE,2014:1382-1387.
[19]LAI W,CHEN M,RAN L,et al.Experimental investigation on the effects of narrow junction temperature cycles on die-attach solder layer in an IGBT module[J].IEEE Transactions on Power Electronics,2016,32(2):1431-1441.
[20]WANG Z,QIAO W.A physics-based improved cauertype thermal equivalent circuit for IGBT modules[J].IEEE Transactions on Power Electronics,2016,31(10):6781-6786.