交替复合磁场去除铝熔体中夹杂物的研究
|
摘要
铝硅过共晶合金凝固过程中析出的初生硅颗粒被视为铝熔体中的夹杂物颗粒。研究了由交替旋转磁场和下行波磁场组成的交替复合磁场对铝熔体中夹杂物的去除效果。结果表明,在交替复合磁场作用下,夹杂物颗粒发生了明显的聚合并迁移至顶部被除去。对比发现,交替复合磁场的除杂效果要优于单向旋转磁场和下行波磁场组成的单向复合磁场。随着交替复合磁场中的交替旋转磁场的频率和电流的增加,磁场除杂效果显著上升。交替时间为10 s时磁场除杂效果最佳。
Primary silicon particles precipitating from the solidification of Al-Si hypereutectic alloy are regarded as inclusions which need removing. The effect of alternating combined magnetic field(CMF) composed of downward travelling magnetic field(TMF) and alternating rotating magnetic field(RMF) on the inclusions removal from aluminum melt was investigated. Inclusion particles agglomerated into clusters and migrated to the top of the melt under alternating CMF. It is found alternating CMF has a better removing effect than oriented CMF composed of oriented RMF and downward TMF. The removing effect of alternating CMF increases when the current and frequency of alternating RMF consisting of alternating CMF increase. Alternating CMF has the best removing effect when the alternating time is 10s.
Primary silicon particles precipitating from the solidification of Al-Si hypereutectic alloy are regarded as inclusions which need removing. The effect of alternating combined magnetic field(CMF) composed of downward travelling magnetic field(TMF) and alternating rotating magnetic field(RMF) on the inclusions removal from aluminum melt was investigated. Inclusion particles agglomerated into clusters and migrated to the top of the melt under alternating CMF. It is found alternating CMF has a better removing effect than oriented CMF composed of oriented RMF and downward TMF. The removing effect of alternating CMF increases when the current and frequency of alternating RMF consisting of alternating CMF increase. Alternating CMF has the best removing effect when the alternating time is 10s.
引文
[1]Shu D,Sun B D,Wang J et al.Metallurgical and Materials Transactions B[J],2000,31(6):1527
[2]Li K,Wang J,Shu D et al.Materials Letters[J],2002,56(3):215
[3]Kolin A.Science[J],1953,117(3032):134
[4]Park J P,Sassa K,Asai S J.Journal of Japan Institute of Metals[J],1995,59(7):733
[5]Park J P,Tanaka Y,Sassa K et al.Conference on Electromagnetic Processing of Materials[C].Nagoya:ISIJ,1994:497
[6]Takahashi K,Taniguchi S.ISIJ International[J],2003,43(6):820
[7]Kaddah N,Ala T.US Patent,US4909836[P],1990
[8]Zhao Chunhui(赵春晖),Li Qiulin(李丘林),Liu Wei(刘伟).Rare Metal Materials and Engineering(稀有金属材料与工程)[J],2012,41(S2):573
[9]Guo Qintao(郭庆涛),Jin Junze(金俊泽),Li Tingju(李廷举).Rare Metal Materials and Engineering(稀有金属材料与工程)[J],2007,36(5):849
[10]Wu Jiaxiong(吴加雄),Ren Zhongming(任忠鸣),Zhang Bang-wen(张邦文)et al.The Chinese Journal of Nonferrous Metals(中国有色金属学报)[J],2004,14(3):354
[11]Leenov D,Kolin A.Jounral of Chemical Physic[J],1995,22(4):683
[12]Miki Y,Kitaoka H,Skuraya T et al.ISIJ International[J],1992,32(1):142
[13]Lu D H,Jiang Y H,Guan G S et al.Journal of Materials Processing Technology[J],2007,189(1-3):13
[14]He Y J,Li Q L,Liu W.Materials Letters[J],2011,65(8):1226
[15]He Y J,Li Q L,Liu W.Metallurgical and Materials Transactions B[J],2012,43(5):1149
[16]Alireza R,Kenji M.Metallurgical and Materials Transactions A[J],2002,33(9):3025
[17]Han Y C,Li Q L,Liu W et al.Metallurgical and Materials Transactions A[J],2012,43(5):1400
[18]Tacke T H,Ludwing J H.Steels Reseach[J],1987,58(6):262
[19]Grant I,Klyukin A,Gerbeth G.Journal of Crystal Growth[J],2009,311(17):4255
[20]Grant I,Gerbeth G.Journal of Crystal Growth[J],2004,269(2-4):630
[21]Lantzsch R,Galindo V,Grants I et al.Journal of Crystal Growth[J],2007,305(1):249
[22]Zaidat K,Khachroum T O,Vian G R.Journal of Crystal Growth[J],2005,275(1-2):150
[2]Li K,Wang J,Shu D et al.Materials Letters[J],2002,56(3):215
[3]Kolin A.Science[J],1953,117(3032):134
[4]Park J P,Sassa K,Asai S J.Journal of Japan Institute of Metals[J],1995,59(7):733
[5]Park J P,Tanaka Y,Sassa K et al.Conference on Electromagnetic Processing of Materials[C].Nagoya:ISIJ,1994:497
[6]Takahashi K,Taniguchi S.ISIJ International[J],2003,43(6):820
[7]Kaddah N,Ala T.US Patent,US4909836[P],1990
[8]Zhao Chunhui(赵春晖),Li Qiulin(李丘林),Liu Wei(刘伟).Rare Metal Materials and Engineering(稀有金属材料与工程)[J],2012,41(S2):573
[9]Guo Qintao(郭庆涛),Jin Junze(金俊泽),Li Tingju(李廷举).Rare Metal Materials and Engineering(稀有金属材料与工程)[J],2007,36(5):849
[10]Wu Jiaxiong(吴加雄),Ren Zhongming(任忠鸣),Zhang Bang-wen(张邦文)et al.The Chinese Journal of Nonferrous Metals(中国有色金属学报)[J],2004,14(3):354
[11]Leenov D,Kolin A.Jounral of Chemical Physic[J],1995,22(4):683
[12]Miki Y,Kitaoka H,Skuraya T et al.ISIJ International[J],1992,32(1):142
[13]Lu D H,Jiang Y H,Guan G S et al.Journal of Materials Processing Technology[J],2007,189(1-3):13
[14]He Y J,Li Q L,Liu W.Materials Letters[J],2011,65(8):1226
[15]He Y J,Li Q L,Liu W.Metallurgical and Materials Transactions B[J],2012,43(5):1149
[16]Alireza R,Kenji M.Metallurgical and Materials Transactions A[J],2002,33(9):3025
[17]Han Y C,Li Q L,Liu W et al.Metallurgical and Materials Transactions A[J],2012,43(5):1400
[18]Tacke T H,Ludwing J H.Steels Reseach[J],1987,58(6):262
[19]Grant I,Klyukin A,Gerbeth G.Journal of Crystal Growth[J],2009,311(17):4255
[20]Grant I,Gerbeth G.Journal of Crystal Growth[J],2004,269(2-4):630
[21]Lantzsch R,Galindo V,Grants I et al.Journal of Crystal Growth[J],2007,305(1):249
[22]Zaidat K,Khachroum T O,Vian G R.Journal of Crystal Growth[J],2005,275(1-2):150