基于铜银微纳米复合层低温互连技术的研究
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摘要
提出了一种新颖的低温固态互连技术。通过特殊形貌的铜银微纳米复合层,在低温条件下,实现了良好的互连质量。通过扫描电子显微镜和焊接强度测试仪器分别分析了互连界面的显微组织形貌变化以及剪切强度变化趋势。结果表明,材料形貌结构产生的机械互锁以及固态原子扩散对互连强度具有积极影响。
A novel low-temperature bonding technology was performed in this paper. In low-temperature, it is true to obtain good bonding quality through micro-nano multistage coating with special morphologies. Structure morphology of the interface of the bonding area were analyzed by X-ray diffractometer and the trend of the shear force strength was analyzed by welding strength tester. The results show that mechanical interlock and solid state atom diffusion have a positive effect on bonding strength.
A novel low-temperature bonding technology was performed in this paper. In low-temperature, it is true to obtain good bonding quality through micro-nano multistage coating with special morphologies. Structure morphology of the interface of the bonding area were analyzed by X-ray diffractometer and the trend of the shear force strength was analyzed by welding strength tester. The results show that mechanical interlock and solid state atom diffusion have a positive effect on bonding strength.
引文
[1]田民波.电子封装工程[M].北京:清华大学出版社,2003.
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[6]Takagi,H.,Kikuchi,K.,Maeda,R.,et al.Surface activated bonding of silicon wafers at room temperature[J].Applied Physics Letters,1996,68(16):2222-2224.
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[8]Wang,P.-I.,Lee,S.H.,Parker,T.C.,et al.Low Temperature Wafer Bonding by Copper Nanorod Array[J].Electrochemical and Solid-State Letters,2009,12(4):H138-H141.
[9]Hang,T.,Hu,A.,Ling,H.,et al.Super-hydrophobic nickel films with micro-nano hierarchical structure prepared by electrodeposition[J].Applied Surface Science,2010,256(8):2400-2404.
[10]W.Zhang,Z.Yu,Z.Chen,M.Li,Preparation of super-hydrophobic Cu/Ni coating with micro-nano hierarchical structure[J].Materials Letters,2012,67(1):327-330.
[2]童志义.高密度封装技术现状及发展趋势[J].电子工业专用设备,2000,29(2):1-9.
[3]徐忠华,须贺唯知.表面活化连接/SAB微电子系统超高密度互连技术[J].电子工业专用设备,2004,33(9):53-57.
[4]杨艳,尹立孟,冼健威,等.绿色电子制造及绿色电子封装材料[J].电子工艺技术,2008,29(5):256-261.
[5]邓丹,吴丰顺,周龙早,等.3D封装及其最新研究进展[J].微纳电子技术,2010,47(7):443-450.
[6]Takagi,H.,Kikuchi,K.,Maeda,R.,et al.Surface activated bonding of silicon wafers at room temperature[J].Applied Physics Letters,1996,68(16):2222-2224.
[7]Pan,C.,Yang,H.,Shen,S.,et al.A low-temperature wafer bonding technique using patternable materials[J].Journal of Micromechanics and Microengineering,2002,12(5):611-615.
[8]Wang,P.-I.,Lee,S.H.,Parker,T.C.,et al.Low Temperature Wafer Bonding by Copper Nanorod Array[J].Electrochemical and Solid-State Letters,2009,12(4):H138-H141.
[9]Hang,T.,Hu,A.,Ling,H.,et al.Super-hydrophobic nickel films with micro-nano hierarchical structure prepared by electrodeposition[J].Applied Surface Science,2010,256(8):2400-2404.
[10]W.Zhang,Z.Yu,Z.Chen,M.Li,Preparation of super-hydrophobic Cu/Ni coating with micro-nano hierarchical structure[J].Materials Letters,2012,67(1):327-330.